Shinichiro Hayashi

Person

Takatsuki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Inductor and method for fabricating the same
- Patent number 7,808,358
- Issue date Oct 5, 2010
- Panasonic Corporation
- Atsushi Nakamura
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor device comprising MIM capacitor
- Patent number 7,800,112
- Issue date Sep 21, 2010
- Panasonic Corporation
- Itaru Ootani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and method for fabricating the same
- Patent number 7,413,949
- Issue date Aug 19, 2008
- Matsushita Electric Industrial Co., Ltd.
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using a conductive film and method of manufact...
- Patent number 7,244,982
- Issue date Jul 17, 2007
- Matsushita Electric Industrial Co., Ltd.
- Shinya Natsume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making ferroelectric thin film having a randomly oriented...
- Patent number 7,220,598
- Issue date May 22, 2007
- Matsushita Electric Industrial Co., Ltd.
- Toru Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device and semiconductor device
- Patent number 7,166,884
- Issue date Jan 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Yano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming ferroelectric film and semiconductor device
- Patent number 7,132,300
- Issue date Nov 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Toshitaka Tatsunari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device using a conductive film and method of manufact...
- Patent number 7,091,541
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Shinya Natsume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitive element and semiconductor memory device
- Patent number 7,015,564
- Issue date Mar 21, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device with capacitor covered b...
- Patent number 6,939,725
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Capacitor and method for fabricating the same
- Patent number 6,891,715
- Issue date May 10, 2005
- Matsushita Electric Industrial Co., Ltd.
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer oxide containing thin films for high dielectric constant...
- Patent number 6,867,452
- Issue date Mar 15, 2005
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 6,847,074
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of liquid deposition by selection of liquid viscosity and ot...
- Patent number 6,830,623
- Issue date Dec 14, 2004
- Symetrix Corporation
- Shinichiro Hayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin film ferroelectric capacitors having improved memory retention...
- Patent number RE38565
- Issue date Aug 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Shinichiro Hayashi
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Ferroelectric capacitor device
- Patent number 6,756,621
- Issue date Jun 29, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toru Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an oxygen diffusion barrier layer formed...
- Patent number 6,753,566
- Issue date Jun 22, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method and system for fabricating the same
- Patent number 6,737,697
- Issue date May 18, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,723,637
- Issue date Apr 20, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device with capping layer and method of making same
- Patent number 6,653,156
- Issue date Nov 25, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxygen diffusion barrier layer termed fro...
- Patent number 6,590,252
- Issue date Jul 8, 2003
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an integrated circuit
- Patent number 6,541,279
- Issue date Apr 1, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device with capping layer and method of making same
- Patent number 6,541,806
- Issue date Apr 1, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DC sputtering process for making smooth electrodes and thin film fe...
- Patent number 6,541,375
- Issue date Apr 1, 2003
- Matsushita Electric Industrial Co., Ltd.
- Shinichiro Hayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlayer oxide containing thin films for high dielectric constant...
- Patent number 6,495,878
- Issue date Dec 17, 2002
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor
- Patent number 6,469,334
- Issue date Oct 22, 2002
- Symetrix Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabrication of integrated circuit by selec...
- Patent number 6,448,190
- Issue date Sep 10, 2002
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory
- Patent number 6,448,598
- Issue date Sep 10, 2002
- Matsushita Electronics Corporation
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of liquid deposition by selection of liquid viscosity and ot...
- Patent number 6,413,883
- Issue date Jul 2, 2002
- Symetrix Corporation
- Shinichiro Hayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Misted precursor deposition apparatus and method with improved mist...
- Patent number 6,383,555
- Issue date May 7, 2002
- Symetrix Corporation
- Shinichiro Hayashi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CAPACITOR INSULATING FILM, METHOD FOR FABRICATING THE SAME, CAPACIT...
- Publication number 20090321801
- Publication date Dec 31, 2009
- PANASONIC CORPORATION
- Shinichiro HAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INDUCTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20090273429
- Publication date Nov 5, 2009
- Atsushi NAKAMURA
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20090108405
- Publication date Apr 30, 2009
- Itaru OOTANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor and method for fabricating the same
- Publication number 20070158715
- Publication date Jul 12, 2007
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor and method for fabricating the same
- Publication number 20070161126
- Publication date Jul 12, 2007
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ferroelectric film and semiconductor device
- Publication number 20070031981
- Publication date Feb 8, 2007
- Matsushita Electric Industrial Co., Ltd.
- Toshitaka Tatsunari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device using a conductive film and method of manufact...
- Publication number 20060267065
- Publication date Nov 30, 2006
- Matsushita Electric Industrial Co., Ltd.
- Shinya Natsume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor insulating film, method for fabricating the same, capacit...
- Publication number 20060108621
- Publication date May 25, 2006
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Shinichiro Hayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Insulating film, capacitive element and semiconductor storage devic...
- Publication number 20060030057
- Publication date Feb 9, 2006
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor and method for fabricating the same
- Publication number 20050199928
- Publication date Sep 15, 2005
- Matsushita Electric Industrial Co., Ltd.
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device and semiconductor device
- Publication number 20050153462
- Publication date Jul 14, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hisashi Yano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Capacitive element and semiconductor memory device
- Publication number 20050006684
- Publication date Jan 13, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050006685
- Publication date Jan 13, 2005
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Shinya Natsume
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ferroelectric film and semiconductor device
- Publication number 20040266034
- Publication date Dec 30, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Toshitaka Tatsunari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device and method and system for fabricating the same
- Publication number 20040155279
- Publication date Aug 12, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FERROELECTRIC CAPACITOR DEVICE
- Publication number 20040104414
- Publication date Jun 3, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toru Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor and method for fabricating the same
- Publication number 20040004793
- Publication date Jan 8, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030207535
- Publication date Nov 6, 2003
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030197212
- Publication date Oct 23, 2003
- Matsushita Electric Industrial Co., Ltd.
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating capacitor device
- Publication number 20030175998
- Publication date Sep 18, 2003
- Matsushita Electric Industrial Co., Ltd.
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlayer oxide containing thin films for high dielectric constant...
- Publication number 20030052357
- Publication date Mar 20, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric device with capping layer and method of making same
- Publication number 20030034548
- Publication date Feb 20, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of liquid deposition by selection of liquid viscosity and ot...
- Publication number 20020092472
- Publication date Jul 18, 2002
- Symetrix Corporation and Matsushita Electronics Corporation
- Shinichiro Hayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020055223
- Publication date May 9, 2002
- Toshie Kutsunai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY
- Publication number 20020000600
- Publication date Jan 3, 2002
- YOSHIHISA NAGANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating ferroelectric field effect transistor
- Publication number 20010041372
- Publication date Nov 15, 2001
- Symetrix Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low imprint ferroelectric material for long retention memory and me...
- Publication number 20010031505
- Publication date Oct 18, 2001
- Symetrix Corporation and Matsushita Electronics Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method and system for fabricating the same
- Publication number 20010028074
- Publication date Oct 11, 2001
- Toshie Kutsunai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor memory device
- Publication number 20010015451
- Publication date Aug 23, 2001
- Yoshihisa Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide thin films for high dielectric constant application
- Publication number 20010012698
- Publication date Aug 9, 2001
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS

Shinichiro Hayashi

Person

Patents Grantslast 30 patents

Inductor and method for fabricating the same

Semiconductor device comprising MIM capacitor

Capacitor and method for fabricating the same

Semiconductor device using a conductive film and method of manufact...

Method of making ferroelectric thin film having a randomly oriented...

Method for fabricating semiconductor device and semiconductor device

Method for forming ferroelectric film and semiconductor device

Semiconductor device using a conductive film and method of manufact...

Capacitive element and semiconductor memory device

Method of fabricating semiconductor device with capacitor covered b...

Capacitor and method for fabricating the same

Interlayer oxide containing thin films for high dielectric constant...

Semiconductor memory device

Method of liquid deposition by selection of liquid viscosity and ot...

Thin film ferroelectric capacitors having improved memory retention...

Ferroelectric capacitor device

Semiconductor device with an oxygen diffusion barrier layer formed...

Semiconductor device and method and system for fabricating the same

Semiconductor device and method for fabricating the same

Ferroelectric device with capping layer and method of making same

Semiconductor device with oxygen diffusion barrier layer termed fro...

Method for forming an integrated circuit

Ferroelectric device with capping layer and method of making same

DC sputtering process for making smooth electrodes and thin film fe...

Interlayer oxide containing thin films for high dielectric constant...

Ferroelectric field effect transistor

Method and apparatus for fabrication of integrated circuit by selec...

Semiconductor memory

Method of liquid deposition by selection of liquid viscosity and ot...

Misted precursor deposition apparatus and method with improved mist...

Patents Applicationslast 30 patents

CAPACITOR INSULATING FILM, METHOD FOR FABRICATING THE SAME, CAPACIT...

INDUCTOR AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...

Ferroelectric capacitor and method for fabricating the same

Ferroelectric capacitor and method for fabricating the same

Method for forming ferroelectric film and semiconductor device

Semiconductor device using a conductive film and method of manufact...

Capacitor insulating film, method for fabricating the same, capacit...

Insulating film, capacitive element and semiconductor storage devic...

Capacitor and method for fabricating the same

Method for fabricating semiconductor device and semiconductor device

Capacitive element and semiconductor memory device

Semiconductor device and method for fabricating the same

Method for forming ferroelectric film and semiconductor device

Semiconductor device and method and system for fabricating the same

FERROELECTRIC CAPACITOR DEVICE

Capacitor and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for fabricating capacitor device

Interlayer oxide containing thin films for high dielectric constant...

Ferroelectric device with capping layer and method of making same

Method of liquid deposition by selection of liquid viscosity and ot...

Semiconductor device and method for fabricating the same

SEMICONDUCTOR MEMORY

Method for fabricating ferroelectric field effect transistor

Low imprint ferroelectric material for long retention memory and me...

Semiconductor device and method and system for fabricating the same

Semiconductor memory device

Metal oxide thin films for high dielectric constant application