Shinji YUASA

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,968,909
- Issue date Apr 23, 2024
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a magnetoresistive random access memory (MRAM)
- Patent number 11,737,372
- Issue date Aug 22, 2023
- Godo Kaisha IP Bridge 1
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a magnetorestive random access memeory (MRAM)
- Patent number 11,233,193
- Issue date Jan 25, 2022
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic element, magnetic memory device, and magnetic sensor
- Patent number 11,133,459
- Issue date Sep 28, 2021
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for controlling a write pulse
- Patent number 11,031,062
- Issue date Jun 8, 2021
- National Institute of Advanced Industrial Science and Technology
- Yoichi Shiota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element
- Patent number 10,998,490
- Issue date May 4, 2021
- National Institute of Advanced Industrial Science and Technology
- Rie Matsumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 10,680,167
- Issue date Jun 9, 2020
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-frequency phase-locked oscillation circuit
- Patent number 10,432,144
- Issue date Oct 1, 2019
- National Institute of Advanced Industrial Science and Technology
- Shingo Tamaru
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistance change type memory including write control circuit to co...
- Patent number 10,431,303
- Issue date Oct 1, 2019
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-collinear magnetoresistive device
- Patent number 10,388,347
- Issue date Aug 20, 2019
- National Institute of Advanced Industrial Science and Technology
- Rie Matsumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 10,367,138
- Issue date Jul 30, 2019
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive device
- Patent number 10,319,902
- Issue date Jun 11, 2019
- National Institute of Advanced Industrial Science and Technology
- Rie Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 9,620,189
- Issue date Apr 11, 2017
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device
- Patent number 9,608,198
- Issue date Mar 28, 2017
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,437,810
- Issue date Sep 6, 2016
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 9,230,628
- Issue date Jan 5, 2016
- Kabushiki Kaisha Toshiba
- Naoharu Shimomura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,219,227
- Issue date Dec 22, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device
- Patent number 9,123,463
- Issue date Sep 1, 2015
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,087,980
- Issue date Jul 21, 2015
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect device and method of production of the same
- Patent number 8,934,290
- Issue date Jan 13, 2015
- Canon Anelva Corporation
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optical device using a plasmonic waveguide, and optical isolator
- Patent number 8,750,666
- Issue date Jun 10, 2014
- National Institute of Advanced Industrial Science and Technology
- Vadym Zayets
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,705,269
- Issue date Apr 22, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,680,632
- Issue date Mar 25, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generating device
- Patent number 8,521,795
- Issue date Aug 27, 2013
- National Institute of Advanced Industrial Science and Technology
- Akio Fukushima
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive effect element, magnetic memory
- Patent number 8,502,331
- Issue date Aug 6, 2013
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction device
- Patent number 8,405,134
- Issue date Mar 26, 2013
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of production of a magnetoresistance effect device
- Patent number 8,394,649
- Issue date Mar 12, 2013
- Canaon Anelva Corporation
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory
- Patent number 8,378,437
- Issue date Feb 19, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction device
- Patent number 8,319,263
- Issue date Nov 27, 2012
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile optical memory element, memory device, and reading meth...
- Patent number 8,270,198
- Issue date Sep 18, 2012
- National Institute of Advanced Industrial Science and Technology
- Vadym Zayets
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND MAGNETIC MEMORY
- Publication number 20240298548
- Publication date Sep 5, 2024
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240284804
- Publication date Aug 22, 2024
- GODO KAISHA IP BRIDGE 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230413685
- Publication date Dec 21, 2023
- Godo Kaisha IP Bridge 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230363288
- Publication date Nov 9, 2023
- GODO KAISHA IP BRIDGE 1
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)
- Publication number 20220115588
- Publication date Apr 14, 2022
- Japan Science and Technology Agency
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, AND MAGNETIC SENSOR
- Publication number 20210036217
- Publication date Feb 4, 2021
- National Institute of Advanced Industrial Science and Technology
- Takayuki NOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20200259077
- Publication date Aug 13, 2020
- Japan Science and Technology Agency
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC ELEMENT
- Publication number 20200052193
- Publication date Feb 13, 2020
- National Institute of Advanced Industrial Science and Technology
- Rie MATSUMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR CONTROLLING SAME
- Publication number 20200035283
- Publication date Jan 30, 2020
- National Institute of Advanced Industrial Science and Technology
- Yoichi SHIOTA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20200020851
- Publication date Jan 16, 2020
- Japan Science and Technology Agency
- Shinji YUASA
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH-FREQUENCY PHASE-LOCKED OSCILLATION CIRCUIT
- Publication number 20180302035
- Publication date Oct 18, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shingo Tamaru
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETORESISTIVE DEVICE
- Publication number 20180233659
- Publication date Aug 16, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE CHANGE TYPE MEMORY
- Publication number 20180158525
- Publication date Jun 7, 2018
- National Institute of Advanced Science and Technology
- Takayuki Nozaki
- G11 - INFORMATION STORAGE
Information Patent Application
NON-COLLINEAR MAGNETORESISTIVE DEVICE
- Publication number 20180151214
- Publication date May 31, 2018
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction Device
- Publication number 20170155042
- Publication date Jun 1, 2017
- Japan Science and Technology Agency
- Shinji YUASA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20160118098
- Publication date Apr 28, 2016
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20160020385
- Publication date Jan 21, 2016
- Japan Science and Technology Agency
- Shinji YUASA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MULTILAYER FILM AND TUNNELING MAGNETORESISTANCE ELEMENT
- Publication number 20150280111
- Publication date Oct 1, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shinji Yuasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20150076635
- Publication date Mar 19, 2015
- KABUSHIKI KAISHA TOSHIBA
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20140264673
- Publication date Sep 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Eiji Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20140269038
- Publication date Sep 18, 2014
- KABUSHIKI KAISHA TOSHIBA
- Naoharu SHIMOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20140159177
- Publication date Jun 12, 2014
- WPI-AIMR, Tohoku University
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME
- Publication number 20140024140
- Publication date Jan 23, 2014
- National Institute of Advanced Industrial Science and Technology
- David D. Djayaprawira
- B82 - NANO-TECHNOLOGY
Information Patent Application
OPTICAL DEVICE USING A PLASMONIC WAVEGUIDE, AND OPTICAL ISOLATOR
- Publication number 20140010509
- Publication date Jan 9, 2014
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Vadym ZAYETS
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...
- Publication number 20130288397
- Publication date Oct 31, 2013
- Eiji Kitagawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Tunnel Junction Device
- Publication number 20130228883
- Publication date Sep 5, 2013
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shinji Yuasa
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120241881
- Publication date Sep 27, 2012
- TOHOKU UNIVERSITY
- Tadaomi DAIBOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
- Publication number 20120161262
- Publication date Jun 28, 2012
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shinji Yuasa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120099369
- Publication date Apr 26, 2012
- Tadashi Kai
- G11 - INFORMATION STORAGE

Shinji YUASA

Person

Patents Grantslast 30 patents

Method of manufacturing a magnetoresistive random access memory (MRAM)

Method of manufacturing a magnetoresistive random access memory (MRAM)

Method of manufacturing a magnetorestive random access memeory (MRAM)

Magnetic element, magnetic memory device, and magnetic sensor

Magnetic memory device and method for controlling a write pulse

Magnetic element

Magnetic tunnel junction device

High-frequency phase-locked oscillation circuit

Resistance change type memory including write control circuit to co...

Non-collinear magnetoresistive device

Magnetic tunnel junction device

Magnetoresistive device

Magnetic memory

Magnetic tunnel junction device

Magnetoresistive element and magnetic memory

Magnetic memory

Magnetoresistive element and magnetic memory

Magnetic tunnel junction device

Magnetoresistive element and magnetic memory

Magnetoresistance effect device and method of production of the same

Optical device using a plasmonic waveguide, and optical isolator

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Random number generating device

Magnetoresistive effect element, magnetic memory

Magnetic tunnel junction device

Method of production of a magnetoresistance effect device

Magnetoresistive effect element and magnetic random access memory

Magnetic tunnel junction device

Nonvolatile optical memory element, memory device, and reading meth...

Patents Applicationslast 30 patents

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND MAGNETIC MEMORY

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM)

MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, AND MAGNETIC SENSOR

MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETIC ELEMENT

MAGNETIC MEMORY DEVICE AND METHOD FOR CONTROLLING SAME

MAGNETIC TUNNEL JUNCTION DEVICE

HIGH-FREQUENCY PHASE-LOCKED OSCILLATION CIRCUIT

MAGNETORESISTIVE DEVICE

RESISTANCE CHANGE TYPE MEMORY

NON-COLLINEAR MAGNETORESISTIVE DEVICE

Magnetic Tunnel Junction Device

MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETIC MULTILAYER FILM AND TUNNELING MAGNETORESISTANCE ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME

OPTICAL DEVICE USING A PLASMONIC WAVEGUIDE, AND OPTICAL ISOLATOR

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...

Magnetic Tunnel Junction Device

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION DEVICE

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY