Shinjiro Umehara

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect device including a nitride underlayer, an a...
- Patent number 8,194,362
- Issue date Jun 5, 2012
- Fujitsu Limited
- Takahiro Ibusuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect device, magnetic lamination structural bod...
- Patent number 8,184,407
- Issue date May 22, 2012
- Fujitsu Limited
- Takahiro Ibusuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element including an amorphous reference layer, a...
- Patent number 8,081,404
- Issue date Dec 20, 2011
- Fujitsu Limited
- Takahiro Ibusuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Patent number 8,072,714
- Issue date Dec 6, 2011
- Fujitsu Limited
- Masashige Sato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory device and method for fabricating the same
- Patent number 7,535,755
- Issue date May 19, 2009
- Fujitsu Limited
- Shinjiro Umehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferromagnetic tunnel junction, magnetic head using the same, magnet...
- Patent number 7,466,526
- Issue date Dec 16, 2008
- Fujitsu Limited
- Masashige Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 7,382,643
- Issue date Jun 3, 2008
- Fujitsu Limited
- Hiroshi Ashida
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Publication number 20110164448
- Publication date Jul 7, 2011
- Fujitsu Limited
- Masashige Sato
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STOR...
- Publication number 20100284103
- Publication date Nov 11, 2010
- Fujitsu Limited
- Takahiro Ibusuki
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20100053824
- Publication date Mar 4, 2010
- Fujitsu Limited
- Takahiro Ibusuki
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT
- Publication number 20090244790
- Publication date Oct 1, 2009
- Fujitsu Limited
- Takahiro Ibusuki
- G01 - MEASURING TESTING
Information Patent Application
FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AN...
- Publication number 20090097170
- Publication date Apr 16, 2009
- Fujitsu Limited
- Masashige Sato
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BOD...
- Publication number 20080232003
- Publication date Sep 25, 2008
- FUJITSU LIMITED
- Takahiro Ibusuki
- G01 - MEASURING TESTING
Information Patent Application
Tunneling magnetoresistance (TMR) device, its manufacture method, m...
- Publication number 20080112093
- Publication date May 15, 2008
- Fujitsu Limited
- Masashige Sato
- G01 - MEASURING TESTING
Information Patent Application
Tunnel magnetoresistance element, magnetic head, and magnetic memory
- Publication number 20080080102
- Publication date Apr 3, 2008
- Fujitsu Limited
- Takahiro Ibusuki
- G01 - MEASURING TESTING
Information Patent Application
Manufacturing method of tunnel magnetoresistance element and manufa...
- Publication number 20070277910
- Publication date Dec 6, 2007
- FUJITSU LIMITED
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method for fabricating the same
- Publication number 20070278603
- Publication date Dec 6, 2007
- FUJITSU LIMITED
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method for fabricating the same
- Publication number 20070241410
- Publication date Oct 18, 2007
- FUJITSU LIMITED
- Shinjiro Umehara
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic memory device and method for driving the same
- Publication number 20070242505
- Publication date Oct 18, 2007
- FUJITSU LIMITED
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect element and magnetic memory device
- Publication number 20070076469
- Publication date Apr 5, 2007
- FUJITSU LIMITED
- Hiroshi Ashida
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic tunnel junction, magnetic head using the same, magnet...
- Publication number 20060256484
- Publication date Nov 16, 2006
- FUJITSU LIMITED
- Masashige Sato
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect element and method for fabricating the same
- Publication number 20060220084
- Publication date Oct 5, 2006
- FUJITSU LIMITED
- Shinjiro Umehara
- B82 - NANO-TECHNOLOGY

Shinjiro Umehara

Person

Patents Grantslast 30 patents

Magnetoresistive effect device including a nitride underlayer, an a...

Magnetoresistance effect device, magnetic lamination structural bod...

Magnetoresistive element including an amorphous reference layer, a...

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

Magnetic memory device and method for fabricating the same

Ferromagnetic tunnel junction, magnetic head using the same, magnet...

Magnetoresistive effect element and magnetic memory device

Patents Applicationslast 30 patents

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STOR...

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT

FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AN...

MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC LAMINATION STRUCTURAL BOD...

Tunneling magnetoresistance (TMR) device, its manufacture method, m...

Tunnel magnetoresistance element, magnetic head, and magnetic memory

Manufacturing method of tunnel magnetoresistance element and manufa...

Magnetic memory device and method for fabricating the same

Magnetic memory device and method for fabricating the same

Magnetic memory device and method for driving the same

Magnetoresistive effect element and magnetic memory device

Ferromagnetic tunnel junction, magnetic head using the same, magnet...

Magnetoresistive effect element and method for fabricating the same