Shinsuke FUJIWARA

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 11,242,618
- Issue date Feb 8, 2022
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide substrate
- Patent number 9,631,296
- Issue date Apr 25, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,583,571
- Issue date Feb 28, 2017
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,450,054
- Issue date Sep 20, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrates and group III nitride crystal
- Patent number 9,368,568
- Issue date Jun 14, 2016
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of growing III-nitride crystal
- Patent number 9,279,194
- Issue date Mar 8, 2016
- Sumitomo Electric Industries, Ltd.
- Hiroaki Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of manufacturing the same
- Patent number 9,255,344
- Issue date Feb 9, 2016
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dislocation in SiC semiconductor substrate
- Patent number 9,184,239
- Issue date Nov 10, 2015
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 9,153,742
- Issue date Oct 6, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group III nitride crystal
- Patent number 9,005,362
- Issue date Apr 14, 2015
- Sumitomo Electric Industries, Ltd.
- Yuki Hiromura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing GaN-based film and composite substrate used...
- Patent number 8,962,365
- Issue date Feb 24, 2015
- Sumitomo Electric Industies, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
III nitride crystal substrate and light-emitting device
- Patent number 8,963,166
- Issue date Feb 24, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer
- Patent number 8,937,339
- Issue date Jan 20, 2015
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dislocations in SiC semiconductor substrate
- Patent number 8,912,550
- Issue date Dec 16, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride crystal
- Patent number 8,847,363
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing Si(1-v-w-x)CwAlxNv base material, process for...
- Patent number 8,715,414
- Issue date May 6, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,697,550
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,697,564
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming epitaxial wafer and method for fabricating semic...
- Patent number 8,679,955
- Issue date Mar 25, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,658,517
- Issue date Feb 25, 2014
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based film
- Patent number 8,658,527
- Issue date Feb 25, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...
- Patent number 8,642,154
- Issue date Feb 4, 2014
- Sumitomo Electric Insustries, Ltd.
- Tsutomu Hori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal silicon carbide substrate and method of manufacturin...
- Patent number 8,642,153
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Light-emitting device
- Patent number 8,629,457
- Issue date Jan 14, 2014
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal substrate and method of manufacturing thereof an...
- Patent number 8,598,685
- Issue date Dec 3, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer, method for manufacturing gallium nitride semicondu...
- Patent number 8,592,289
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate manufacturing method and silicon carbide...
- Patent number 8,586,998
- Issue date Nov 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 8,574,364
- Issue date Nov 5, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
III nitride crystal substrate, and light-emitting device and method...
- Patent number 8,546,166
- Issue date Oct 1, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...
- Patent number 8,540,817
- Issue date Sep 24, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20170152609
- Publication date Jun 1, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160108553
- Publication date Apr 21, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE
- Publication number 20160027879
- Publication date Jan 28, 2016
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20150225873
- Publication date Aug 13, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing GaN-Based Film and Composite Substrate Used...
- Publication number 20150118830
- Publication date Apr 30, 2015
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20150060886
- Publication date Mar 5, 2015
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal Substrates and Group III Nitride Crystal
- Publication number 20140369920
- Publication date Dec 18, 2014
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Single Crystal Substrate and Method of Manufacturing Thereof an...
- Publication number 20140061668
- Publication date Mar 6, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device
- Publication number 20130341633
- Publication date Dec 26, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
III Nitride Crystal Substrate and Light-Emitting Device
- Publication number 20130341672
- Publication date Dec 26, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Group III Nitride Crystal
- Publication number 20130337632
- Publication date Dec 19, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL
- Publication number 20130327265
- Publication date Dec 12, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130292737
- Publication date Nov 7, 2013
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20130255568
- Publication date Oct 3, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL
- Publication number 20130239881
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20130161646
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
INGOT, SUBSTRATE, AND SUBSTRATE GROUP
- Publication number 20130161647
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...
- Publication number 20130149847
- Publication date Jun 13, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...
- Publication number 20130105858
- Publication date May 2, 2013
- Sumitomo Electric Industries, Ltd.
- Issei SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130071643
- Publication date Mar 21, 2013
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL
- Publication number 20130061801
- Publication date Mar 14, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING...
- Publication number 20130056752
- Publication date Mar 7, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GaN-BASED FILM
- Publication number 20130040442
- Publication date Feb 14, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SILICON CARBIDE...
- Publication number 20130026497
- Publication date Jan 31, 2013
- Sumitomo Electric Industries, Ltd.
- Hiroki INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Crystal and Method for Producing the Same
- Publication number 20120329245
- Publication date Dec 27, 2012
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20120325196
- Publication date Dec 27, 2012
- Sumitomo Electric Industries, Ltd.
- Kyoko OKITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120319125
- Publication date Dec 20, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURIN...
- Publication number 20120315427
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND M...
- Publication number 20120308758
- Publication date Dec 6, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20120244307
- Publication date Sep 27, 2012
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH

Shinsuke FUJIWARA

Person

Patents Grantslast 30 patents

Silicon carbide substrate and method of manufacturing the same

Method of manufacturing silicon carbide substrate

Dislocation in SiC semiconductor substrate

Dislocation in SiC semiconductor substrate

Group III nitride crystal substrates and group III nitride crystal

Method of growing III-nitride crystal

Silicon carbide substrate and method of manufacturing the same

Dislocation in SiC semiconductor substrate

GaN-crystal free-standing substrate and method for producing the same

Method for growing group III nitride crystal

Method of manufacturing GaN-based film and composite substrate used...

III nitride crystal substrate and light-emitting device

Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer

Dislocations in SiC semiconductor substrate

Method for producing group III nitride crystal

Process for producing Si(1-v-w-x)CwAlxNv base material, process for...

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film

Method for forming epitaxial wafer and method for fabricating semic...

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film

Silicon carbide crystal ingot, silicon carbide crystal wafer, and m...

Single crystal silicon carbide substrate and method of manufacturin...

Light-emitting device

GaN single crystal substrate and method of manufacturing thereof an...

Epitaxial wafer, method for manufacturing gallium nitride semicondu...

Silicon carbide substrate manufacturing method and silicon carbide...

GaN-crystal free-standing substrate and method for producing the same

III nitride crystal substrate, and light-emitting device and method...

Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of m...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

DISCLOCATION IN SiC SEMICONDUCTOR SUBSTRATE

METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE

Method of Manufacturing GaN-Based Film and Composite Substrate Used...

SEMICONDUCTOR SUBSTRATE

Group III Nitride Crystal Substrates and Group III Nitride Crystal

GaN Single Crystal Substrate and Method of Manufacturing Thereof an...

Semiconductor Device

III Nitride Crystal Substrate and Light-Emitting Device

Method for Producing Group III Nitride Crystal

METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SINGLE-CRYSTAL

SEMICONDUCTOR SUBSTRATE

INGOT, SUBSTRATE, AND SUBSTRATE GROUP

METHOD OF MANUFACTURING GaN-BASED FILM AND COMPOSITE SUBSTRATE USED...

PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR...

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE MANUFACTURING...

METHOD OF MANUFACTURING GaN-BASED FILM

SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SILICON CARBIDE...

Group III Nitride Crystal and Method for Producing the Same

METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE

SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURIN...

SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND M...

SILICON CARBIDE SUBSTRATE