Shinya Asami

Person

Inazawa-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting semiconductor device using Group III nitride compound
- Patent number 7,045,829
- Issue date May 16, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 7,045,809
- Issue date May 16, 2006
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III group nitride compound semiconductor luminescent element
- Patent number 7,030,414
- Issue date Apr 18, 2006
- Toyoda Gosei Co., Ltd.
- Shinya Asami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,982,435
- Issue date Jan 3, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method of produ...
- Patent number 6,939,733
- Issue date Sep 6, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and producing metho...
- Patent number 6,918,961
- Issue date Jul 19, 2005
- Toyoda Gosei Co., Ltd
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,872,965
- Issue date Mar 29, 2005
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,853,009
- Issue date Feb 8, 2005
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,841,808
- Issue date Jan 11, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device whic...
- Patent number 6,838,706
- Issue date Jan 4, 2005
- Toyoda Gosei Co., Ltd.
- Hiroshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,821,800
- Issue date Nov 23, 2004
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method of produ...
- Patent number 6,713,789
- Issue date Mar 30, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 6,645,785
- Issue date Nov 11, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor d...
- Patent number 6,623,998
- Issue date Sep 23, 2003
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III nitride compound semiconductor device and producing metho...
- Patent number 6,593,016
- Issue date Jul 15, 2003
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,541,293
- Issue date Apr 1, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,531,719
- Issue date Mar 11, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III nitride compound semiconductor device
- Patent number 6,426,512
- Issue date Jul 30, 2002
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,423,984
- Issue date Jul 23, 2002
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,420,733
- Issue date Jul 16, 2002
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,342,404
- Issue date Jan 29, 2002
- Toyoda Gosei Co., Ltd
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,326,236
- Issue date Dec 4, 2001
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 6,288,416
- Issue date Sep 11, 2001
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,040,588
- Issue date Mar 21, 2000
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 5,959,401
- Issue date Sep 28, 1999
- Toyoda Gosei Co., Ltd
- Shinya Asami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 5,945,689
- Issue date Aug 31, 1999
- Toyoda Gosei Co., Ltd
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting semiconductor device using a Group III nitride compo...
- Patent number 5,753,939
- Issue date May 19, 1998
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having group III nitride compound and enabling...
- Patent number 5,650,641
- Issue date Jul 22, 1997
- Toyoda Gosei Co., Ltd.
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 5,587,593
- Issue date Dec 24, 1996
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Group III nitride compound semiconductor device and method of produ...
- Publication number 20040115917
- Publication date Jun 17, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III group nitride compound semiconductor luminescent element
- Publication number 20040113169
- Publication date Jun 17, 2004
- Shinya Asami
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20040026705
- Publication date Feb 12, 2004
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device using group III nitride compound
- Publication number 20040018657
- Publication date Jan 29, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device using group III nitride compound
- Publication number 20030205718
- Publication date Nov 6, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and producing metho...
- Publication number 20030205195
- Publication date Nov 6, 2003
- TOYODA GOSEI CO., LTD
- Toshiaki Chiyo
- C30 - CRYSTAL GROWTH
Information Patent Application
III group nitride compound semiconductor ligh-emitting element
- Publication number 20030189218
- Publication date Oct 9, 2003
- Hiroshi Watanabe
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20030124789
- Publication date Jul 3, 2003
- TOYODA GOSEI CO., LTD
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20030085411
- Publication date May 8, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITRIDE COMPOUND
- Publication number 20030057433
- Publication date Mar 27, 2003
- MASAYOSHI KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20030042505
- Publication date Mar 6, 2003
- Toyoda Gosei Co., Ltd.
- Jun Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20020149024
- Publication date Oct 17, 2002
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20020146854
- Publication date Oct 10, 2002
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor device and method for prod...
- Publication number 20020070383
- Publication date Jun 13, 2002
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and method for prod...
- Publication number 20020014629
- Publication date Feb 7, 2002
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device
- Publication number 20010050376
- Publication date Dec 13, 2001
- TOYODA GOSEI CO., LTD
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20010048112
- Publication date Dec 6, 2001
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device using group III nitride compound
- Publication number 20010045564
- Publication date Nov 29, 2001
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY

Shinya Asami

Person

Patents Grantslast 30 patents

Light-emitting semiconductor device using Group III nitride compound

Light-emitting semiconductor device using gallium nitride compound...

III group nitride compound semiconductor luminescent element

Group III nitride compound semiconductor device and method for prod...

Group III nitride compound semiconductor device and method of produ...

Group III nitride compound semiconductor device and producing metho...

Group III nitride compound semiconductor device

Light-emitting semiconductor device using gallium nitride compound...

Group III nitride compound semiconductor device and method for prod...

Group III nitride compound semiconductor light-emitting device whic...

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor device and method of produ...

Light-emitting semiconductor device using group III nitride compound

Method for manufacturing group III nitride compound semiconductor d...

Group III nitride compound semiconductor device and producing metho...

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor device

Group III nitride compound semiconductor device

Light-emitting semiconductor device using gallium nitride compound...

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor device and method for prod...

Semiconductor light-emitting device and manufacturing method thereof

Light-emitting semiconductor device using group III nitride compound

Semiconductor light-emitting device

Light-emitting semiconductor device using group III nitride compound

Light-emitting semiconductor device using group III nitride compound

Light-emitting semiconductor device using a Group III nitride compo...

Semiconductor device having group III nitride compound and enabling...

Light-emitting semiconductor device using group III nitrogen compound

Patents Applicationslast 30 patents

Group III nitride compound semiconductor device and method of produ...

III group nitride compound semiconductor luminescent element

Light-emitting semiconductor device using gallium nitride compound...

Light-emitting semiconductor device using group III nitride compound

Light-emitting semiconductor device using group III nitride compound

Group III nitride compound semiconductor device and producing metho...

III group nitride compound semiconductor ligh-emitting element

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor device

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITRIDE COMPOUND

Group III nitride compound semiconductor device

Light-emitting semiconductor device using gallium nitride compound...

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor device and method for prod...

Group III nitride compound semiconductor device and method for prod...

Group III nitride compound semiconductor device

Semiconductor light-emitting device and manufacturing method thereof

Light-emitting semiconductor device using group III nitride compound