Shogo Mochizuki

Person

Kanagawa-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Localized fin width scaling using a hydrogen anneal
- Patent number 10,312,377
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs having epitaxial Si S/D extensions with...
- Patent number 10,020,303
- Issue date Jul 10, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions on a seed layer an...
- Patent number 9,991,255
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...
- Patent number 9,991,258
- Issue date Jun 5, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 9,812,556
- Issue date Nov 7, 2017
- Renesas Electronics Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized fin width scaling using a hydrogen anneal
- Patent number 9,666,726
- Issue date May 30, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized fin width scaling using a hydrogen anneal
- Patent number 9,537,015
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium fin
- Patent number 9,496,341
- Issue date Nov 15, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming FinFETs with non-merged epitaxial fin extensions
- Patent number 9,484,440
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized fin width scaling using a hydrogen anneal
- Patent number 9,263,554
- Issue date Feb 16, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with channel core modified to reduce leakag...
- Patent number 9,196,715
- Issue date Nov 24, 2015
- Renesas Electronics Corporation
- Tomohiro Hirai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
FinFET with silicon germanium stressor and method of forming
- Patent number 9,105,663
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-merged epitaxially grown MOSFET devices
- Patent number 9,059,002
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20170033104
- Publication date Feb 2, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL
- Publication number 20170033201
- Publication date Feb 2, 2017
- International Business Machines Corporation
- VEERARAGHAVAN S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FIN
- Publication number 20160359001
- Publication date Dec 8, 2016
- GlobalFoundries U.S. 2 LLC
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL
- Publication number 20160111553
- Publication date Apr 21, 2016
- International Business Machines Corporation
- VEERARAGHAVAN S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL
- Publication number 20160086820
- Publication date Mar 24, 2016
- RENESAS ELECTRONICS CORPORATION
- VEERARAGHAVAN S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...
- Publication number 20160020312
- Publication date Jan 21, 2016
- RENESAS ELECTRONICS CORPORATION
- Tomohiro HIRAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150295065
- Publication date Oct 15, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING
- Publication number 20150214338
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150206877
- Publication date Jul 23, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150194504
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES
- Publication number 20150061015
- Publication date Mar 5, 2015
- RENESAS ELECTRONICS CORPORATION
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL
- Publication number 20140353735
- Publication date Dec 4, 2014
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...
- Publication number 20140183605
- Publication date Jul 3, 2014
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...
- Publication number 20140183451
- Publication date Jul 3, 2014
- RENESAS ELECTRONICS CORPORATION
- Tomohiro HIRAI
- B82 - NANO-TECHNOLOGY

Shogo Mochizuki

Person

Patents Grantslast 30 patents

Localized fin width scaling using a hydrogen anneal

Methods for forming FinFETs having epitaxial Si S/D extensions with...

FinFETs with non-merged epitaxial S/D extensions on a seed layer an...

FinFETs with non-merged epitaxial S/D extensions having a SiGe seed...

Semiconductor device and method of manufacturing the semiconductor...

Localized fin width scaling using a hydrogen anneal

Localized fin width scaling using a hydrogen anneal

Silicon germanium fin

Methods for forming FinFETs with non-merged epitaxial fin extensions

Localized fin width scaling using a hydrogen anneal

Field effect transistor with channel core modified to reduce leakag...

FinFET with silicon germanium stressor and method of forming

Non-merged epitaxially grown MOSFET devices

Patents Applicationslast 30 patents

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL

SILICON GERMANIUM FIN

LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL

LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL

FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES

LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR...

FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAG...