Shoji Ikeda

Person

Sendai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic laminated film, magnetic memory element, magnetic memory,...
- Patent number 12,236,988
- Issue date Feb 25, 2025
- Tohoku University
- Yoshiaki Saito
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic tunnel junction device, method for manufacturing magnetic...
- Patent number 11,963,458
- Issue date Apr 16, 2024
- TOHOKU UNIVERSITY
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 11,770,981
- Issue date Sep 26, 2023
- Tohoku University
- Hiroaki Honjo
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,765,981
- Issue date Sep 19, 2023
- TOHOKU UNIVERSITY
- Sadahiko Miura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory
- Patent number 11,631,804
- Issue date Apr 18, 2023
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element, magnetic memory device, and writing and r...
- Patent number 11,610,614
- Issue date Mar 21, 2023
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 11,563,169
- Issue date Jan 24, 2023
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic laminated film, magnetic memory element, and magnetic memory
- Patent number 11,532,667
- Issue date Dec 20, 2022
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device with write current flowing simultaneously th...
- Patent number 11,468,932
- Issue date Oct 11, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,462,253
- Issue date Oct 4, 2022
- Tohoku University
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic memory array, magnetic m...
- Patent number 11,430,498
- Issue date Aug 30, 2022
- TOHOKU UNIVERSITY
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit device
- Patent number 11,417,378
- Issue date Aug 16, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,264,565
- Issue date Mar 1, 2022
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element, method for producing same, and magnetic me...
- Patent number 11,258,006
- Issue date Feb 22, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 11,121,310
- Issue date Sep 14, 2021
- Tohoku University
- Soshi Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic memory, and method for m...
- Patent number 11,081,641
- Issue date Aug 3, 2021
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Evaluation method and evaluation apparatus for electronic device
- Patent number 11,062,876
- Issue date Jul 13, 2021
- TOHOKU UNIVERSITY
- Masaaki Niwa
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic tunnel junction element and method for manufacturing same
- Patent number 10,833,256
- Issue date Nov 10, 2020
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,804,457
- Issue date Oct 13, 2020
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing magnetic tunnel coupling element
- Patent number 10,749,107
- Issue date Aug 18, 2020
- Tohoku University
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic material and method of manufacturing the same
- Patent number 10,706,996
- Issue date Jul 7, 2020
- Tohoku University
- Shunsuke Fukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,658,572
- Issue date May 19, 2020
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,651,369
- Issue date May 12, 2020
- Tohoku University
- Hideo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing magnetic memory comprising magnetic tunnel jun...
- Patent number 10,644,234
- Issue date May 5, 2020
- Tohoku University
- Kenchi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 10,586,580
- Issue date Mar 10, 2020
- Tohoku University
- Hiroaki Honjo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spintronics element
- Patent number 10,424,725
- Issue date Sep 24, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 10,396,274
- Issue date Aug 27, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,263,180
- Issue date Apr 16, 2019
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,164,174
- Issue date Dec 25, 2018
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Control method for magnetoresistance effect element and control dev...
- Patent number 10,127,957
- Issue date Nov 13, 2018
- Tohoku University
- Shun Kanai
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20250031581
- Publication date Jan 23, 2025
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...
- Publication number 20240284803
- Publication date Aug 22, 2024
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY AND ARTIFICIAL INT...
- Publication number 20240244983
- Publication date Jul 18, 2024
- TOHOKU UNIVERSITY
- Yoshiaki Saito
Information Patent Application
PLATINUM-BASED SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME
- Publication number 20230407459
- Publication date Dec 21, 2023
- TOHOKU UNIVERSITY
- Akihito FUJINO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20230292623
- Publication date Sep 14, 2023
- Tohoku University
- Sadahiko MIURA
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
- Publication number 20230243062
- Publication date Aug 3, 2023
- GLOBALWAFERS JAPAN CO., LTD.
- Haruo SUDO
- C30 - CRYSTAL GROWTH
Information Patent Application
MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...
- Publication number 20230028652
- Publication date Jan 26, 2023
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNETIC MEMORY
- Publication number 20220115440
- Publication date Apr 14, 2022
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC FILM, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20220052111
- Publication date Feb 17, 2022
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATI...
- Publication number 20210399208
- Publication date Dec 23, 2021
- TOHOKU UNIVERSITY
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY ARRAY, MAGNETIC M...
- Publication number 20210233577
- Publication date Jul 29, 2021
- Tohoku University
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...
- Publication number 20210158849
- Publication date May 27, 2021
- Tohoku University
- Yoshiaki Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20210135094
- Publication date May 6, 2021
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20210125654
- Publication date Apr 29, 2021
- Tohoku University
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20210110857
- Publication date Apr 15, 2021
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, AND MAGNETIC ME...
- Publication number 20210091304
- Publication date Mar 25, 2021
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20210074910
- Publication date Mar 11, 2021
- TOHOKU UNIVERSITY
- Yoshiaki SAITO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE, METHOD FOR MANUFACTURING MAGNETIC...
- Publication number 20210057641
- Publication date Feb 25, 2021
- Tohoku University
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20200343442
- Publication date Oct 29, 2020
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20200090719
- Publication date Mar 19, 2020
- TOHOKU UNIVERSITY
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...
- Publication number 20200044142
- Publication date Feb 6, 2020
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF
- Publication number 20190363245
- Publication date Nov 28, 2019
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EVALUATION METHOD AND EVALUATION APPARATUS FOR ELECTRONIC DEVICE
- Publication number 20190304741
- Publication date Oct 3, 2019
- Tohoku University
- Masaaki Niwa
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190304526
- Publication date Oct 3, 2019
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190229262
- Publication date Jul 25, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...
- Publication number 20190198755
- Publication date Jun 27, 2019
- TOHOKU UNIVERSITY
- Kenchi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190189917
- Publication date Jun 20, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20190074433
- Publication date Mar 7, 2019
- TOHOKU UNIVERSITY
- Hideo SATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190019944
- Publication date Jan 17, 2019
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
SPINTRONICS ELEMENT
- Publication number 20180301621
- Publication date Oct 18, 2018
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS

Shoji Ikeda

Person

Patents Grantslast 30 patents

Magnetic laminated film, magnetic memory element, magnetic memory,...

Magnetic tunnel junction device, method for manufacturing magnetic...

Magnetoresistive element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistive effect element and magnetic memory

Magnetoresistive element, magnetic memory device, and writing and r...

Magnetic tunnel junction element and magnetic memory

Magnetic laminated film, magnetic memory element, and magnetic memory

Magnetic memory device with write current flowing simultaneously th...

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element, magnetic memory array, magnetic m...

Integrated circuit device

Magnetoresistance effect element and magnetic memory

Magnetic memory element, method for producing same, and magnetic me...

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element, magnetic memory, and method for m...

Evaluation method and evaluation apparatus for electronic device

Magnetic tunnel junction element and method for manufacturing same

Magnetoresistive element and magnetic memory

Method of manufacturing magnetic tunnel coupling element

Magnetic material and method of manufacturing the same

Magnetoresistance effect element and magnetic memory

Magnetoresistive element and magnetic memory

Method for producing magnetic memory comprising magnetic tunnel jun...

Magnetic tunnel junction element and magnetic memory

Spintronics element

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Control method for magnetoresistance effect element and control dev...

Patents Applicationslast 30 patents

MAGNETIC STACKED FILM AND MAGNETORESISTIVE EFFECT ELEMENT

TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNET...

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY AND ARTIFICIAL INT...

PLATINUM-BASED SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER

MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY,...

MAGNETIC LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNETIC MEMORY

MAGNETIC FILM, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATI...

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY ARRAY, MAGNETIC M...

MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY DEVICE, AND WRITING AND R...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY DEVICE

INTEGRATED CIRCUIT DEVICE

MAGNETIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, AND MAGNETIC ME...

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION DEVICE, METHOD FOR MANUFACTURING MAGNETIC...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...

SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF

EVALUATION METHOD AND EVALUATION APPARATUS FOR ELECTRONIC DEVICE

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME

METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...

MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

SPINTRONICS ELEMENT