Shreesh Narasimha

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 11,101,357
- Issue date Aug 24, 2021
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming interconnect without gate cut isolation blocking opening fo...
- Patent number 11,056,398
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with self-aligned and non-self-aligned con...
- Patent number 10,833,160
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,734,492
- Issue date Aug 4, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,580,686
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,381,452
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,374,048
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 10,367,072
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,242,906
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin fabrication process with dual shallow trench isolation and tuna...
- Patent number 10,083,878
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with decreased pitch contact to active regions
- Patent number 10,074,571
- Issue date Sep 11, 2018
- GLOBALFOUNDRIES INC.
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 10,032,862
- Issue date Jul 24, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,922,831
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,859,122
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,837,319
- Issue date Dec 5, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to control fin tip placement
- Patent number 9,812,324
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Lei Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure for semiconductor devices with multiple powe...
- Patent number 9,812,396
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Jason Eugene Stephens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ANA regions in an integrated circuit
- Patent number 9,786,545
- Issue date Oct 10, 2017
- GLOBALFOUNDRIES Inc.
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,768,195
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,768,071
- Issue date Sep 19, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,721,843
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,698,159
- Issue date Jul 4, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,685,379
- Issue date Jun 20, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with integrated passive structures
- Patent number 9,659,961
- Issue date May 23, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,577,061
- Issue date Feb 21, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-K dielectric for reducing gate induced drain leakage
- Patent number 9,570,354
- Issue date Feb 14, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,559,010
- Issue date Jan 31, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-k dielectric for reducing gate induced drain leakage
- Patent number 9,543,213
- Issue date Jan 10, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structure having a nitride plug
- Patent number 9,443,929
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source drain epitaxy
- Patent number 9,437,496
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES
- Publication number 20240429236
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES
- Publication number 20240421209
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...
- Publication number 20240371924
- Publication date Nov 7, 2024
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...
- Publication number 20210028067
- Publication date Jan 28, 2021
- GLOBALFOUNDRIES INC.
- Daniel J. Jaeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20200365702
- Publication date Nov 19, 2020
- Tessera, Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...
- Publication number 20200335591
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20200027779
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20190296120
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20190181037
- Publication date Jun 13, 2019
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20180277424
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH DECREASED PITCH CONTACT TO ACTIVE REGIONS
- Publication number 20180261512
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Brian J. GREENE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION
- Publication number 20180197734
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Bhupesh CHANDRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180076039
- Publication date Mar 15, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061645
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20180061646
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20170338145
- Publication date Nov 23, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20170236898
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170178913
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20170125542
- Publication date May 4, 2017
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20160307918
- Publication date Oct 20, 2016
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
- Publication number 20160307806
- Publication date Oct 20, 2016
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160268390
- Publication date Sep 15, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160260618
- Publication date Sep 8, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160260638
- Publication date Sep 8, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203987
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203985
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160204214
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160203986
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE
- Publication number 20160204209
- Publication date Jul 14, 2016
- International Business Machines Corporation
- Anthony I. CHOU
- H01 - BASIC ELECTRIC ELEMENTS

Shreesh Narasimha

Person

Patents Grantslast 30 patents

Asymmetric high-k dielectric for reducing gate induced drain leakage

Forming interconnect without gate cut isolation blocking opening fo...

Field-effect transistors with self-aligned and non-self-aligned con...

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Fin fabrication process with dual shallow trench isolation and tuna...

Device with decreased pitch contact to active regions

Semiconductor structure with integrated passive structures

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Methods to control fin tip placement

Interconnect structure for semiconductor devices with multiple powe...

Method of forming ANA regions in an integrated circuit

Semiconductor structure with integrated passive structures

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Asymmetric high-k dielectric for reducing gate induced drain leakage

Semiconductor structure with integrated passive structures

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Shallow trench isolation structure having a nitride plug

Merged source drain epitaxy

Patents Applicationslast 30 patents

VARIABLE VERTICAL-STACK NANOSHEET FOR GATE-ALL-AROUND DEVICES

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES

ENHANCED-SHAPED EXTENSION REGION(S) FOR GATE-ALL-AROUND (GAA) FIELD...

FORMING INTERCONNECT WITHOUT GATE CUT ISOLATION BLOCKING OPENING FO...

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

DEVICE WITH DECREASED PITCH CONTACT TO ACTIVE REGIONS

BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE

ASYMMETRIC HIGH-K DIELECTRIC FOR REDUCING GATE INDUCED DRAIN LEAKAGE