Shuroku Sakurada

Person

Hitachinaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and package structure therefore and power inve...
- Patent number 5,652,467
- Issue date Jul 29, 1997
- Hitachi, Ltd.
- Hidekatsu Onose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type semiconductor device in which the reliability a...
- Patent number 5,635,734
- Issue date Jun 3, 1997
- Hitachi, Ltd.
- Yuji Takayanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor
- Patent number 5,554,863
- Issue date Sep 10, 1996
- Hitachi, Ltd.
- Sigeyasu Kouzuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor of multi-emitter type
- Patent number 5,051,806
- Issue date Sep 24, 1991
- Hitachi, Ltd.
- Toshihide Ujihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor of multi-emitter type
- Patent number 4,868,625
- Issue date Sep 19, 1989
- Hitachi, Ltd.
- Toshihide Ujihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor
- Patent number 4,786,959
- Issue date Nov 22, 1988
- Hitachi, Ltd.
- Yoshiteru Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure contact semiconductor device
- Patent number 4,775,916
- Issue date Oct 4, 1988
- Hitachi Ltd.
- Shigeyasu Kouzuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor with integral capacitive anode
- Patent number 4,682,198
- Issue date Jul 21, 1987
- Hitachi, Ltd.
- Shuroku Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 4,607,273
- Issue date Aug 19, 1986
- Hitachi, Ltd.
- Shuroku Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor with selective anode penetrating shorts
- Patent number 4,450,467
- Issue date May 22, 1984
- Hitachi, Ltd.
- Takahiro Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with double moat and double channel stoppers
- Patent number 4,298,881
- Issue date Nov 3, 1981
- Hitachi, Ltd.
- Shuroku Sakurada
- H01 - BASIC ELECTRIC ELEMENTS

Shuroku Sakurada

Person

Patents Grantslast 30 patents

Semiconductor device and package structure therefore and power inve...

Insulated gate type semiconductor device in which the reliability a...

Gate turn-off thyristor

Gate turn-off thyristor of multi-emitter type

Gate turn-off thyristor of multi-emitter type

Gate turn-off thyristor

Pressure contact semiconductor device

Gate turn-off thyristor with integral capacitive anode

Power semiconductor device

Gate turn-off thyristor with selective anode penetrating shorts

Semiconductor device with double moat and double channel stoppers