Shuxia Wang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic junctions having elongated free layers
- Patent number 10,177,197
- Issue date Jan 8, 2019
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Grant
Recessed IRMN reader process
- Patent number 9,177,588
- Issue date Nov 3, 2015
- HGST Netherlands B.V.
- James Mac Freitag
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic bias structure for magnetoresistive sensor having a scisso...
- Patent number 8,907,666
- Issue date Dec 9, 2014
- HGST Netherlands B.V.
- Quang Le
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A DUAL MAGNETIC JUNCTION HAVING MIT...
- Publication number 20180269384
- Publication date Sep 20, 2018
- Samsung Electronics Co., Ltd.
- Shuxia Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A DUAL MAGNETIC JUNCTION HAVING MIT...
- Publication number 20180190898
- Publication date Jul 5, 2018
- Samsung Electronics Co., Ltd.
- Shuxia Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC JUNCTIONS HAVING ELONGATED FREE LAYERS
- Publication number 20170140804
- Publication date May 18, 2017
- Samsung Electronics Co., Ltd.
- Dmytro Apalkov
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
- Publication number 20160163338
- Publication date Jun 9, 2016
- HGST NETHERLANDS B.V.
- Kuok S. Ho
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE-INPUT-MULTIPLE-OUTPUT SENSOR DESIGNS FOR MAGNETIC APPLICAT...
- Publication number 20160055868
- Publication date Feb 25, 2016
- HGST NETHERLANDS B.V.
- Zheng Gao
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE...
- Publication number 20150221328
- Publication date Aug 6, 2015
- HGST NETHERLANDS B.V.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Application
RECESSED IRMN READER PROCESS
- Publication number 20150206550
- Publication date Jul 23, 2015
- HGST NETHERLANDS B.V.
- James Mac FREITAG
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR HAVING A SCISSO...
- Publication number 20130082696
- Publication date Apr 4, 2013
- Hitachi Global Storage Technologies Netherlands B.V.
- Quang Le
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR
- Publication number 20130083432
- Publication date Apr 4, 2013
- Hitachi Global Storage Technologies Netherlands B.V.
- Quang Le
- G01 - MEASURING TESTING

Shuxia Wang

Person

Patents Grantslast 30 patents

Magnetic junctions having elongated free layers

Recessed IRMN reader process

Magnetic bias structure for magnetoresistive sensor having a scisso...

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR PROVIDING A DUAL MAGNETIC JUNCTION HAVING MIT...

METHOD AND SYSTEM FOR PROVIDING A DUAL MAGNETIC JUNCTION HAVING MIT...

MAGNETIC JUNCTIONS HAVING ELONGATED FREE LAYERS

TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER

MULTIPLE-INPUT-MULTIPLE-OUTPUT SENSOR DESIGNS FOR MAGNETIC APPLICAT...

MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE...

RECESSED IRMN READER PROCESS

MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR HAVING A SCISSO...

MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR