Shyh-Chang Tsaur

Person

Stafford, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High density, electrically erasable, floating gate memory cell
- Patent number 4,561,004
- Issue date Dec 24, 1985
- Texas Instruments
- Chang-Kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high density dynamic memory cell
- Patent number 4,536,941
- Issue date Aug 27, 1985
- Chang-Kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Closely-spaced double level conductors for MOS read only
- Patent number 4,385,432
- Issue date May 31, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density electrically programmable ROM
- Patent number 4,377,818
- Issue date Mar 22, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density dynamic memory cell
- Patent number 4,376,983
- Issue date Mar 15, 1983
- Texas Instruments Incorporated
- Shyh-Chang Tsaur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high density memory cells with improved metal-to-s...
- Patent number 4,372,031
- Issue date Feb 8, 1983
- Texas Instruments Incorporated
- Shyh-Chang Tsaur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density, electrically erasable, floating gate memory cell
- Patent number 4,317,272
- Issue date Mar 2, 1982
- Texas Instruments Incorporated
- Chang-kiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density electrically programmable ROM
- Patent number 4,258,466
- Issue date Mar 31, 1981
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple dummy cell layout for MOS random access memory
- Patent number 4,198,697
- Issue date Apr 15, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Median spaced dummy cell layout for MOS random access memory
- Patent number 4,195,357
- Issue date Mar 25, 1980
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE

Shyh-Chang Tsaur

Person

Patents Grantslast 30 patents

High density, electrically erasable, floating gate memory cell

Method of making high density dynamic memory cell

Closely-spaced double level conductors for MOS read only

High density electrically programmable ROM

High density dynamic memory cell

Method of making high density memory cells with improved metal-to-s...

High density, electrically erasable, floating gate memory cell

High density electrically programmable ROM

Multiple dummy cell layout for MOS random access memory

Median spaced dummy cell layout for MOS random access memory