Sidney I. Soclof

Person

San Gabriel, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Complementary NPN and PNP lateral transistors separated from substr...
- Patent number 5,097,316
- Issue date Mar 17, 1992
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNP type lateral transistor with minimal substrate operation interf...
- Patent number 5,047,828
- Issue date Sep 10, 1991
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extremely small area npn lateral transistor
- Patent number 5,043,787
- Issue date Aug 27, 1991
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistor separated from substrate by intersecting slots f...
- Patent number 5,031,014
- Issue date Jul 9, 1991
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN type lateral transistor with minimal substrate operation interf...
- Patent number 5,027,184
- Issue date Jun 25, 1991
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNP type lateral transistor with minimal substrate operation interf...
- Patent number 5,025,302
- Issue date Jun 18, 1991
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon vacuum electron devices
- Patent number 4,683,399
- Issue date Jul 28, 1987
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing NPN type lateral transistors
- Patent number 4,611,387
- Issue date Sep 16, 1986
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistor separated from substrate by intersecting slots f...
- Patent number 4,584,762
- Issue date Apr 29, 1986
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PNP-type lateral transistor with minimal substrate operation interf...
- Patent number 4,580,331
- Issue date Apr 8, 1986
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing PNP type lateral transistor separated from sub...
- Patent number 4,522,682
- Issue date Jun 11, 1985
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small area high value resistor with greatly reduced parasitic capac...
- Patent number 4,506,283
- Issue date Mar 19, 1985
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small area high value resistor with greatly reduced parasitic capac...
- Patent number 4,497,685
- Issue date Feb 5, 1985
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN Type lateral transistor separated from substrate by O.D.E. for...
- Patent number 4,485,551
- Issue date Dec 4, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting transistor array
- Patent number 4,473,834
- Issue date Sep 25, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making extremely small area PNP lateral transistor by ang...
- Patent number 4,466,178
- Issue date Aug 21, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing punch through voltage regulator diodes util...
- Patent number 4,466,180
- Issue date Aug 21, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing NPN type lateral transistor with minimal subs...
- Patent number 4,437,226
- Issue date Mar 20, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing lateral transistor separated from substrate by...
- Patent number 4,435,899
- Issue date Mar 13, 1984
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lateral bipolar transistors
- Patent number 4,419,150
- Issue date Dec 6, 1983
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making sub-micron dimensioned NPN lateral transistor
- Patent number 4,415,371
- Issue date Nov 15, 1983
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit chip transmission line
- Patent number 4,389,429
- Issue date Jun 21, 1983
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip transmission line
- Patent number 4,379,307
- Issue date Apr 5, 1983
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor magneto-transistor device
- Patent number 4,369,406
- Issue date Jan 18, 1983
- Rockwell International Corporation
- Sidney I. Soclof
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed optical parametric amplifier
- Patent number 4,361,814
- Issue date Nov 30, 1982
- Rockwell International Corporation
- Sidney I. Soclof
- H03 - BASIC ELECTRONIC CIRCUITRY

Sidney I. Soclof

Person

Patents Grantslast 30 patents

Complementary NPN and PNP lateral transistors separated from substr...

PNP type lateral transistor with minimal substrate operation interf...

Extremely small area npn lateral transistor

Lateral transistor separated from substrate by intersecting slots f...

NPN type lateral transistor with minimal substrate operation interf...

PNP type lateral transistor with minimal substrate operation interf...

Silicon vacuum electron devices

Process for producing NPN type lateral transistors

Lateral transistor separated from substrate by intersecting slots f...

PNP-type lateral transistor with minimal substrate operation interf...

Method for producing PNP type lateral transistor separated from sub...

Small area high value resistor with greatly reduced parasitic capac...

Small area high value resistor with greatly reduced parasitic capac...

NPN Type lateral transistor separated from substrate by O.D.E. for...

Light emitting transistor array

Method of making extremely small area PNP lateral transistor by ang...

Method of manufacturing punch through voltage regulator diodes util...

Process for producing NPN type lateral transistor with minimal subs...

Method of producing lateral transistor separated from substrate by...

Method of forming lateral bipolar transistors

Method of making sub-micron dimensioned NPN lateral transistor

Method of forming integrated circuit chip transmission line

Integrated circuit chip transmission line

Semiconductor magneto-transistor device

Distributed optical parametric amplifier