Siegfried Maurer

Person

Stormville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned source and drain regions for semiconductor devices
- Patent number 9,916,984
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Joel P. de Souza
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
Self-aligned source and drain regions for semiconductor devices
- Patent number 9,786,756
- Issue date Oct 10, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned source and drain regions for semiconductor devices
- Patent number 9,673,290
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped zinc oxide and n-doping to reduce junction leakage
- Patent number 9,620,592
- Issue date Apr 11, 2017
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned source and drain regions for semiconductor devices
- Patent number 9,443,957
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating graded media
- Patent number 9,418,692
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Charanjit Singh Bhatia
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating graded media
- Patent number 8,900,730
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Charanjit Singh Bhatia
- G11 - INFORMATION STORAGE
Information Patent Grant
N-type carrier enhancement in semiconductors
- Patent number 8,642,431
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Jee Hwan Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
N-type carrier enhancement in semiconductors
- Patent number 8,476,152
- Issue date Jul 2, 2013
- International Business Machines Corporation
- Jee Hwan Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
CMOS transistors with stressed high mobility channels
- Patent number 8,354,694
- Issue date Jan 15, 2013
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type carrier enhancement in semiconductors
- Patent number 8,343,863
- Issue date Jan 1, 2013
- International Business Machines Corporation
- Jee Hwan Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method to enable the process and enlarge the process window for sil...
- Patent number 8,247,319
- Issue date Aug 21, 2012
- International Business Machines Corporation
- Benjamin Luke Fletcher
- B82 - NANO-TECHNOLOGY
Information Patent Grant
N-type carrier enhancement in semiconductors
- Patent number 8,178,430
- Issue date May 15, 2012
- International Business Machines Corporation
- Jee Hwan Kim
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Thin buried oxides by low-dose oxygen implantation into modified si...
- Patent number 7,718,231
- Issue date May 18, 2010
- International Business Machines Corporation
- Kwang Su Choe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of buried oxide in SIMOX
- Patent number 7,492,008
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of buried oxide in SIMOX
- Patent number 6,784,072
- Issue date Aug 31, 2004
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20170213736
- Publication date Jul 27, 2017
- International Business Machines Corporation
- JOEL P. de SOUZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20160336418
- Publication date Nov 17, 2016
- International Business Machines Corporation
- JOEL P. de SOUZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20160336424
- Publication date Nov 17, 2016
- International Business Machines Corporation
- JOEL P. de SOUZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20160268395
- Publication date Sep 15, 2016
- International Business Machines Corporation
- JOEL P. de SOUZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED ZINC OXIDE AND N- DOPING TO REDUCE JUNCTION LEAKAGE
- Publication number 20160240620
- Publication date Aug 18, 2016
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Graded Media
- Publication number 20150118521
- Publication date Apr 30, 2015
- International Business Machines Corporation
- Charanjit Singh Bhatia
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING GRADED MEDIA
- Publication number 20130320254
- Publication date Dec 5, 2013
- National University of Singapore
- Charanjit Singh Bhatia
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR SIL...
- Publication number 20120202345
- Publication date Aug 9, 2012
- International Business Machines Corporation
- Benjamin Luke Fletcher
- B82 - NANO-TECHNOLOGY
Information Patent Application
N-type carrier enhancement in semiconductors
- Publication number 20120190161
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Jee Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-type carrier enhancement in semiconductors
- Publication number 20120190177
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Jee Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-type carrier enhancement in semiconductors
- Publication number 20120135587
- Publication date May 31, 2012
- International Business Machines Corporation
- Jee Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TRANSISTORS WITH STRESSED HIGH MOBILITY CHANNELS
- Publication number 20120037998
- Publication date Feb 16, 2012
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Junction Source/Drain FET Fabrication Using Sulfur or Flou...
- Publication number 20110241115
- Publication date Oct 6, 2011
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-type carrier enhancement in semiconductors
- Publication number 20100261319
- Publication date Oct 14, 2010
- International Business Machines Corporation
- Jee Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High electrical quality buried oxide in simox
- Publication number 20050170570
- Publication date Aug 4, 2005
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin buried oxides by low-dose oxygen implantation into modified si...
- Publication number 20050067055
- Publication date Mar 31, 2005
- International Business Machines Corporation
- Kwang Su Choe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of buried oxide in SIMOX
- Publication number 20050003626
- Publication date Jan 6, 2005
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICON-ON-INSULATOR WAFERS HAVING PROCESS RESIST...
- Publication number 20040266129
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Joel P. DeSouza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of buried oxide in SIMOX
- Publication number 20040013886
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Stephen Richard Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Divot reduction in SIMOX layers
- Publication number 20020190318
- Publication date Dec 19, 2002
- International Business Machines Corporation
- Stephen R. Fox
- H01 - BASIC ELECTRIC ELEMENTS

Siegfried Maurer

Person

Patents Grantslast 30 patents

Self-aligned source and drain regions for semiconductor devices

Self-aligned source and drain regions for semiconductor devices

Self-aligned source and drain regions for semiconductor devices

Doped zinc oxide and n-doping to reduce junction leakage

Self-aligned source and drain regions for semiconductor devices

Method of fabricating graded media

Method of fabricating graded media

N-type carrier enhancement in semiconductors

N-type carrier enhancement in semiconductors

CMOS transistors with stressed high mobility channels

N-type carrier enhancement in semiconductors

Method to enable the process and enlarge the process window for sil...

N-type carrier enhancement in semiconductors

Thin buried oxides by low-dose oxygen implantation into modified si...

Control of buried oxide in SIMOX

Control of buried oxide in SIMOX

Patents Applicationslast 30 patents

SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES

SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES

SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES

SELF-ALIGNED SOURCE AND DRAIN REGIONS FOR SEMICONDUCTOR DEVICES

DOPED ZINC OXIDE AND N- DOPING TO REDUCE JUNCTION LEAKAGE

Method of Fabricating Graded Media

METHOD OF FABRICATING GRADED MEDIA

METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR SIL...

N-type carrier enhancement in semiconductors

N-type carrier enhancement in semiconductors

N-type carrier enhancement in semiconductors

CMOS TRANSISTORS WITH STRESSED HIGH MOBILITY CHANNELS

Schottky Junction Source/Drain FET Fabrication Using Sulfur or Flou...

N-type carrier enhancement in semiconductors

High electrical quality buried oxide in simox

Thin buried oxides by low-dose oxygen implantation into modified si...

Control of buried oxide in SIMOX

METHOD OF FORMING SILICON-ON-INSULATOR WAFERS HAVING PROCESS RESIST...

Control of buried oxide in SIMOX

Divot reduction in SIMOX layers