Sien G. Kang

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bond and release layer transfer process
- Patent number 10,164,144
- Issue date Dec 25, 2018
- QMAT, INC.
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Techniques for forming optoelectronic devices
- Patent number 10,041,187
- Issue date Aug 7, 2018
- QMAT, INC.
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bond and release layer transfer process
- Patent number 9,859,458
- Issue date Jan 2, 2018
- QMAT, INC.
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Techniques for forming optoelectronic devices
- Patent number 9,257,339
- Issue date Feb 9, 2016
- SILICON GENESIS CORPORATION
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-contact etch annealing of strained layers
- Patent number 8,187,377
- Issue date May 29, 2012
- Silicon Genesis Corporation
- Igor J. Malik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Free-standing thickness of single crystal material and method havin...
- Patent number 8,133,800
- Issue date Mar 13, 2012
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for fabricating bonded substrate structures us...
- Patent number 7,598,153
- Issue date Oct 6, 2009
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface finishing of SOI substrates using an EPI process
- Patent number 7,253,081
- Issue date Aug 7, 2007
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment method of film quality for the manufacture of substrates
- Patent number 6,969,668
- Issue date Nov 29, 2005
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing method for cleaved films made using a release layer
- Patent number 6,881,644
- Issue date Apr 19, 2005
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing method for cleaved films made using thermal treatment
- Patent number 6,455,399
- Issue date Sep 24, 2002
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for generating a plurality of donor wafers and ha...
- Patent number 6,448,152
- Issue date Sep 10, 2002
- Silicon Genesis Corporation
- Francois J. Henley
- G05 - CONTROLLING REGULATING
Information Patent Grant
Smoothing method for cleaved films made using a release layer
- Patent number 6,391,219
- Issue date May 21, 2002
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface finishing of SOI substrates using an EPI process
- Patent number 6,287,941
- Issue date Sep 11, 2001
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothing method for cleaved films made using thermal treatment
- Patent number 6,204,151
- Issue date Mar 20, 2001
- Silicon Genesis Corporation
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment method of cleaved film for the manufacture of substrates
- Patent number 6,171,965
- Issue date Jan 9, 2001
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BOND AND RELEASE LAYER TRANSFER PROCESS
- Publication number 20190103507
- Publication date Apr 4, 2019
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20190024259
- Publication date Jan 24, 2019
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
BOND AND RELEASE LAYER TRANSFER PROCESS
- Publication number 20180040765
- Publication date Feb 8, 2018
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20170358704
- Publication date Dec 14, 2017
- Silicon Genesis Corporation
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20170084778
- Publication date Mar 23, 2017
- Silicon Genesis Corporation
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
BOND AND RELEASE LAYER TRANSFER PROCESS
- Publication number 20160372628
- Publication date Dec 22, 2016
- QMAT, Inc.
- Francois J. HENLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20160111500
- Publication date Apr 21, 2016
- Silicon Genesis Corporation
- Francois J. HENLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20140197419
- Publication date Jul 17, 2014
- QMAT, Inc.
- Francois J. HENLEY
- C30 - CRYSTAL GROWTH
Information Patent Application
TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES
- Publication number 20130292691
- Publication date Nov 7, 2013
- Silicon Genesis Corporation
- Francois J. Henley
- C30 - CRYSTAL GROWTH
Information Patent Application
Free-standing thickness of single crystal material and method havin...
- Publication number 20100052105
- Publication date Mar 4, 2010
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARRIER APPARATUS AND METHOD FOR SHAPED SHEET MATERIALS
- Publication number 20090152162
- Publication date Jun 18, 2009
- Silicon Genesis Corporation
- LU TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface finishing of SOI substrates using an EPI process
- Publication number 20070259526
- Publication date Nov 8, 2007
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for fabricating bonded substrate structures us...
- Publication number 20070232022
- Publication date Oct 4, 2007
- Silicon Genesis Corporation
- Francois J. Henley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-contact etch annealing of strained layers
- Publication number 20040067644
- Publication date Apr 8, 2004
- Igor J. Malik
- C30 - CRYSTAL GROWTH
Information Patent Application
Smoothing method for cleaved films made using a release layer
- Publication number 20030008477
- Publication date Jan 9, 2003
- Silicon Genesis Corporation
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface finishing of SOI substrates using an EPI process
- Publication number 20020022344
- Publication date Feb 21, 2002
- Sien G. Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Smoothing method for cleaved films made using thermal treatment
- Publication number 20010016402
- Publication date Aug 23, 2001
- Igor J. Malik
- H01 - BASIC ELECTRIC ELEMENTS

Sien G. Kang

Person

Patents Grantslast 30 patents

Bond and release layer transfer process

Techniques for forming optoelectronic devices

Bond and release layer transfer process

Techniques for forming optoelectronic devices

Non-contact etch annealing of strained layers

Free-standing thickness of single crystal material and method havin...

Method and structure for fabricating bonded substrate structures us...

Surface finishing of SOI substrates using an EPI process

Treatment method of film quality for the manufacture of substrates

Smoothing method for cleaved films made using a release layer

Smoothing method for cleaved films made using thermal treatment

Method and system for generating a plurality of donor wafers and ha...

Smoothing method for cleaved films made using a release layer

Surface finishing of SOI substrates using an EPI process

Smoothing method for cleaved films made using thermal treatment

Treatment method of cleaved film for the manufacture of substrates

Patents Applicationslast 30 patents

BOND AND RELEASE LAYER TRANSFER PROCESS

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

BOND AND RELEASE LAYER TRANSFER PROCESS

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

BOND AND RELEASE LAYER TRANSFER PROCESS

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

TECHNIQUES FOR FORMING OPTOELECTRONIC DEVICES

Free-standing thickness of single crystal material and method havin...

CARRIER APPARATUS AND METHOD FOR SHAPED SHEET MATERIALS

Surface finishing of SOI substrates using an EPI process

Method and structure for fabricating bonded substrate structures us...

Non-contact etch annealing of strained layers

Smoothing method for cleaved films made using a release layer

Surface finishing of SOI substrates using an EPI process

Smoothing method for cleaved films made using thermal treatment