Simon Deleonibus

Person

Claix, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making electrical interconnections with carbon nanotubes
- Patent number 8,518,816
- Issue date Aug 27, 2013
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Paul-Henri Haumesser
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing a conductive nanoparticle memory device
- Patent number 8,389,368
- Issue date Mar 5, 2013
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Simon Deleonibus
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of active areas of different natures directly onto an i...
- Patent number 7,820,523
- Issue date Oct 26, 2010
- Commissariat a l'Energie Atomique
- François Andrieu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing a transistor
- Patent number 7,678,635
- Issue date Mar 16, 2010
- Commissariat a l'Energie Atomique
- Laurent Clavelier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a vertical MOS transistor with embedded gate
- Patent number 7,666,733
- Issue date Feb 23, 2010
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with suitable source, drain and channel mat...
- Patent number 7,566,922
- Issue date Jul 28, 2009
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a field effect transistor with diamond-like carbo...
- Patent number 7,553,693
- Issue date Jun 30, 2009
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectangular semi-conducting support for microelectronics and method...
- Patent number 7,466,019
- Issue date Dec 16, 2008
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for delineating a conducting element disposed on an insulati...
- Patent number 7,425,496
- Issue date Sep 16, 2008
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming patterns aligned on either side of a thin film
- Patent number 7,425,509
- Issue date Sep 16, 2008
- Commissariat a l'Energie Atomique
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor with horizontal self-aligned gates and the...
- Patent number 7,022,562
- Issue date Apr 4, 2006
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes for making a single election transistor with a vertical c...
- Patent number 6,998,310
- Issue date Feb 14, 2006
- Commissariat a l'Energie Atomique
- David Fraboulet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene architecture electronic storage and method for making same
- Patent number 6,955,963
- Issue date Oct 18, 2005
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an electronic component with self-aligned drain a...
- Patent number 6,867,128
- Issue date Mar 15, 2005
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal source and drain mos transistor
- Patent number 6,787,845
- Issue date Sep 7, 2004
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for creating an integrated circuit stage wherein fine and la...
- Patent number 6,727,179
- Issue date Apr 27, 2004
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS transistor and method for making same on a semiconductor substrate
- Patent number 6,562,687
- Issue date May 13, 2003
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing MIS transistor with self-aligned metal grid
- Patent number 6,346,450
- Issue date Feb 12, 2002
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor with self-aligned contacts and fi...
- Patent number 6,150,241
- Issue date Nov 21, 2000
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum WELL MOS transistor and methods for making same
- Patent number 6,091,076
- Issue date Jul 18, 2000
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MOS transistor and lateral insulating method of a MOS transistor ac...
- Patent number 5,973,365
- Issue date Oct 26, 1999
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a transistor with self-aligned source and drain...
- Patent number 5,913,136
- Issue date Jun 15, 1999
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate of the silicon on insulator type for the production of tr...
- Patent number 5,897,939
- Issue date Apr 27, 1999
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the production of a high voltage MIS integrated circuit
- Patent number 5,314,832
- Issue date May 24, 1994
- Commissariat a l'Energie Atomique
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE
- Publication number 20140370678
- Publication date Dec 18, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE AUX ENERGIES
- Simon Deleonibus
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE
- Publication number 20130157426
- Publication date Jun 20, 2013
- Centre National de la Recherche Scientifique
- Simon DELEONIBUS
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MAKING ELECTRICAL INTERCONNECTIONS WITH CARBON NANOTUBES
- Publication number 20120094479
- Publication date Apr 19, 2012
- Centre National de la Recherche Scientifique
- Paul-Henri Haumesser
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE
- Publication number 20110033996
- Publication date Feb 10, 2011
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Simon DELEONIBUS
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF PRODUCING A TRANSISTOR
- Publication number 20080200001
- Publication date Aug 21, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Laurent CLAVELIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOS transistor with embedded gate and its fabrication process
- Publication number 20080096354
- Publication date Apr 24, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rectangular Semi-Conducting Support for Microelectronics and Method...
- Publication number 20080001274
- Publication date Jan 3, 2008
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Active Areas of Different Natures Directly Onto an I...
- Publication number 20070246702
- Publication date Oct 25, 2007
- Francois Andrieu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Making a Field Effect Transistor with Diamond-Like Carbo...
- Publication number 20070218600
- Publication date Sep 20, 2007
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor-On-Insulator Substrate Comprising A Buried Diamond-Li...
- Publication number 20070215941
- Publication date Sep 20, 2007
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with suitable source, drain and channel mat...
- Publication number 20070187728
- Publication date Aug 16, 2007
- COMMISSARIAT A L'ENERGIE ATOMIQUE
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mis transistor with self-aligned gate and method for making same
- Publication number 20070001239
- Publication date Jan 4, 2007
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for delineating a conducting element which is disposed on an...
- Publication number 20060172523
- Publication date Aug 3, 2006
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming patterns aligned on either side of a thin film
- Publication number 20060148256
- Publication date Jul 6, 2006
- Maud Vinet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with an electron and a vertical channel and production m...
- Publication number 20040238808
- Publication date Dec 2, 2004
- David Fraboulet
- B82 - NANO-TECHNOLOGY
Information Patent Application
Field-effect transistor with horizontal self-aligned gates and the...
- Publication number 20040197977
- Publication date Oct 7, 2004
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damascene architecture electronics storage and method for making same
- Publication number 20040029345
- Publication date Feb 12, 2004
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical mos transistor with buried gate and method for making same
- Publication number 20030132484
- Publication date Jul 17, 2003
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for creating an intergrated circuit stage wherein fine and l...
- Publication number 20030077899
- Publication date Apr 24, 2003
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal source and drain mos transistor, and method for making same
- Publication number 20030042547
- Publication date Mar 6, 2003
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making an electronic component with self-aligned drain a...
- Publication number 20030008496
- Publication date Jan 9, 2003
- Simon Deleonibus
- H01 - BASIC ELECTRIC ELEMENTS

Simon Deleonibus

Person

Patents Grantslast 30 patents

Method for making electrical interconnections with carbon nanotubes

Method for producing a conductive nanoparticle memory device

Fabrication of active areas of different natures directly onto an i...

Method of producing a transistor

Method for making a vertical MOS transistor with embedded gate

Field effect transistor with suitable source, drain and channel mat...

Method for making a field effect transistor with diamond-like carbo...

Rectangular semi-conducting support for microelectronics and method...

Method for delineating a conducting element disposed on an insulati...

Method for forming patterns aligned on either side of a thin film

Field-effect transistor with horizontal self-aligned gates and the...

Processes for making a single election transistor with a vertical c...

Damascene architecture electronic storage and method for making same

Method for making an electronic component with self-aligned drain a...

Metal source and drain mos transistor

Method for creating an integrated circuit stage wherein fine and la...

MIS transistor and method for making same on a semiconductor substrate

Process for manufacturing MIS transistor with self-aligned metal grid

Method for producing a transistor with self-aligned contacts and fi...

Quantum WELL MOS transistor and methods for making same

MOS transistor and lateral insulating method of a MOS transistor ac...

Process for making a transistor with self-aligned source and drain...

Substrate of the silicon on insulator type for the production of tr...

Process for the production of a high voltage MIS integrated circuit

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE

METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE

METHOD FOR MAKING ELECTRICAL INTERCONNECTIONS WITH CARBON NANOTUBES

METHOD FOR PRODUCING A CONDUCTIVE NANOPARTICLE MEMORY DEVICE

METHOD OF PRODUCING A TRANSISTOR

Vertical MOS transistor with embedded gate and its fabrication process

Rectangular Semi-Conducting Support for Microelectronics and Method...

Fabrication of Active Areas of Different Natures Directly Onto an I...

Method for Making a Field Effect Transistor with Diamond-Like Carbo...

Semiconductor-On-Insulator Substrate Comprising A Buried Diamond-Li...

Field effect transistor with suitable source, drain and channel mat...

Mis transistor with self-aligned gate and method for making same

Method for delineating a conducting element which is disposed on an...

Method for forming patterns aligned on either side of a thin film

Transistor with an electron and a vertical channel and production m...

Field-effect transistor with horizontal self-aligned gates and the...

Damascene architecture electronics storage and method for making same

Vertical mos transistor with buried gate and method for making same

Method for creating an intergrated circuit stage wherein fine and l...

Metal source and drain mos transistor, and method for making same

Method for making an electronic component with self-aligned drain a...