Songkram SRIVATHANAKUL

Person

Waterford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of self-forming barrier formation in metal interconnection...
- Patent number 9,905,460
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Moosung M. Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming mask layers using a flowable carbon-containing...
- Patent number 9,793,169
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,349,814
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion barrier film and method of manu...
- Patent number 9,330,982
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of carbon-rich contact liner material
- Patent number 9,318,440
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor devices with local isolation features and meth...
- Patent number 9,245,979
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES, INC.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of carbon-rich contact liner material
- Patent number 9,130,019
- Issue date Sep 8, 2015
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate height uniformity in semiconductor devices
- Patent number 9,093,560
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES Inc.
- Tsung-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits utilizing silicon nitri...
- Patent number 8,940,650
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES, INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate height variance during semiconductor device formation
- Patent number 8,900,940
- Issue date Dec 2, 2014
- GLOBALFOUNDRIES Inc.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a low-K dielectric film
- Patent number 8,716,150
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Zhiguo Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH
- Publication number 20240363354
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- He REN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR BOW COMPENSATION USING TENSILE NITRIDE
- Publication number 20240363357
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- David H. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRESS LINERS USING ATOMIC LAYER DEPOSITION TO F...
- Publication number 20200111704
- Publication date Apr 9, 2020
- GLOBALFOUNDRIES INC.
- Eric S. Kozarksy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING MASK LAYERS USING A FLOWABLE CARBON-CONTAINING...
- Publication number 20180005893
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...
- Publication number 20170338325
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SELF-FORMING BARRIER FORMATION IN METAL INTERCONNECTION...
- Publication number 20170133325
- Publication date May 11, 2017
- GLOBALFOUNDRIES INC.
- Moosung M. CHAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF CARBON-RICH CONTACT LINER MATERIAL
- Publication number 20150357285
- Publication date Dec 10, 2015
- GLOBALFOUNDRIES INC.
- Huy CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150270364
- Publication date Sep 24, 2015
- GLOBALFOUNDRIES INC.
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF CARBON-RICH CONTACT LINER MATERIAL
- Publication number 20150194342
- Publication date Jul 9, 2015
- GLOBALFOUNDRIES INC.
- Huy CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES
- Publication number 20150084131
- Publication date Mar 26, 2015
- Tsung-Liang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR DEVICES WITH LOCAL ISOLATION FEATURES AND METH...
- Publication number 20140346599
- Publication date Nov 27, 2014
- GLOBALFOUNDRIES, Inc.
- Xiuyu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS UTILIZING SILICON NITRI...
- Publication number 20140256141
- Publication date Sep 11, 2014
- GLOBALFOUNDRIES, Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE HEIGHT VARIANCE DURING SEMICONDUCTOR DEVICE FORMATION
- Publication number 20140193957
- Publication date Jul 10, 2014
- GLOBALFOUNDRIES INC.
- Ashish K. Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER DIVOT SEALING METHOD AND SEMICONDUCTOR DEVICE INCORPORATING...
- Publication number 20140175562
- Publication date Jun 26, 2014
- GLOBALFOUNDRIES, Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS

Songkram SRIVATHANAKUL

Person

Patents Grantslast 30 patents

Methods of self-forming barrier formation in metal interconnection...

Methods for forming mask layers using a flowable carbon-containing...

Gate height uniformity in semiconductor devices

Semiconductor device with diffusion barrier film and method of manu...

Formation of carbon-rich contact liner material

FinFET semiconductor devices with local isolation features and meth...

Formation of carbon-rich contact liner material

Gate height uniformity in semiconductor devices

Methods for fabricating integrated circuits utilizing silicon nitri...

Reducing gate height variance during semiconductor device formation

Method of forming a low-K dielectric film

Patents Applicationslast 30 patents

LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH

METHODS FOR BOW COMPENSATION USING TENSILE NITRIDE

METHODS OF FORMING STRESS LINERS USING ATOMIC LAYER DEPOSITION TO F...

METHODS FOR FORMING MASK LAYERS USING A FLOWABLE CARBON-CONTAINING...

METHOD, APPARATUS AND SYSTEM FOR PROVIDING NITRIDE CAP LAYER IN REP...

METHODS OF SELF-FORMING BARRIER FORMATION IN METAL INTERCONNECTION...

FORMATION OF CARBON-RICH CONTACT LINER MATERIAL

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

FORMATION OF CARBON-RICH CONTACT LINER MATERIAL

GATE HEIGHT UNIFORMITY IN SEMICONDUCTOR DEVICES

FINFET SEMICONDUCTOR DEVICES WITH LOCAL ISOLATION FEATURES AND METH...

METHODS FOR FABRICATING INTEGRATED CIRCUITS UTILIZING SILICON NITRI...

REDUCING GATE HEIGHT VARIANCE DURING SEMICONDUCTOR DEVICE FORMATION

SPACER DIVOT SEALING METHOD AND SEMICONDUCTOR DEVICE INCORPORATING...