Srikant Sridevan

Person

Redondo Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a superjunction device with improved ruggedness
- Patent number 9,478,441
- Issue date Oct 25, 2016
- Siliconix Technology C.V.
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device having a GaN transistor and a silicon M...
- Patent number 8,368,120
- Issue date Feb 5, 2013
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hybrid semiconductor device
- Patent number 8,017,978
- Issue date Sep 13, 2011
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High voltage vertical conduction superjunction semiconductor device
- Patent number RE41509
- Issue date Aug 17, 2010
- International Rectifier Corporation
- Daniel M. Kinzer
- 257 - Active solid-state devices
Information Patent Grant
Superjunction device with improved ruggedness
- Patent number 7,767,500
- Issue date Aug 3, 2010
- Siliconix Technology C.V.
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for a superjunction device
- Patent number 7,659,588
- Issue date Feb 9, 2010
- Siliconix Technology C.V.
- Ali Husain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with improved ruggedness
- Patent number 7,166,890
- Issue date Jan 23, 2007
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power silicon carbide and silicon semiconductor device package
- Patent number 6,900,537
- Issue date May 31, 2005
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional shallow trench superjunction device with resurf region
- Patent number 6,835,993
- Issue date Dec 28, 2004
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench fill process
- Patent number 6,812,525
- Issue date Nov 2, 2004
- International Rectifier Corporation
- Igor Bul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral conduction superjunction semiconductor device
- Patent number 6,787,872
- Issue date Sep 7, 2004
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing polysilicon FET built on silicon carbide diode...
- Patent number 6,727,128
- Issue date Apr 27, 2004
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage vertical conduction superjunction semiconductor device
- Patent number 6,608,350
- Issue date Aug 19, 2003
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon FET built on silicon carbide diode substrate
- Patent number 6,552,363
- Issue date Apr 22, 2003
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with self compensated trench walls
- Patent number 6,512,267
- Issue date Jan 28, 2003
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angle implant process for cellular deep trench sidewall doping
- Patent number 6,509,240
- Issue date Jan 21, 2003
- International Rectifier Corporation
- Liping Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSgated trench type power semiconductor with silicon carbide subst...
- Patent number 6,194,741
- Issue date Feb 27, 2001
- International Rectifier Corp.
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hybrid Semiconductor Device Having a GaN Transistor and a Silicon M...
- Publication number 20120043553
- Publication date Feb 23, 2012
- International Rectifier Corporation
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Termination for a superjunction device
- Publication number 20070222025
- Publication date Sep 27, 2007
- Ali Husain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid semiconductor device
- Publication number 20070210333
- Publication date Sep 13, 2007
- International Rectifier Corp.
- Alexander Lidow
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Superjunction device with improved ruggedness
- Publication number 20070048909
- Publication date Mar 1, 2007
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction device with improved ruggedness
- Publication number 20050082570
- Publication date Apr 21, 2005
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power silicon carbide and silicon semiconductor device package
- Publication number 20040130021
- Publication date Jul 8, 2004
- International Rectifier Corporation
- Srikant Sridevan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Bidirectional shallow trench superjunction device with resurf region
- Publication number 20040065934
- Publication date Apr 8, 2004
- International Rectifier Corp.
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fill process
- Publication number 20030234423
- Publication date Dec 25, 2003
- International Rectifier Corporation
- Igor Bul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polysilicon fet built on silicon carbide diode substrate
- Publication number 20030153118
- Publication date Aug 14, 2003
- International Rectifier Corporation
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON FET BUILT ON SILICON CARBIDE DIODE SUBSTRATE
- Publication number 20030052321
- Publication date Mar 20, 2003
- International Rectifier Corp.
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral superjunction semiconductor device
- Publication number 20020195627
- Publication date Dec 26, 2002
- International Rectifier Corp.
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction device with self compensated trench walls
- Publication number 20020149051
- Publication date Oct 17, 2002
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage vertical conduction superjunction semiconductor device
- Publication number 20020070418
- Publication date Jun 13, 2002
- International Rectifier Corporation
- Daniel M Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Angle implant process for cellular deep trench sidewall doping
- Publication number 20010041400
- Publication date Nov 15, 2001
- International Rectifier Corp.
- Lipping Ren
- H01 - BASIC ELECTRIC ELEMENTS

Srikant Sridevan

Person

Patents Grantslast 30 patents

Method for forming a superjunction device with improved ruggedness

Hybrid semiconductor device having a GaN transistor and a silicon M...

Hybrid semiconductor device

High voltage vertical conduction superjunction semiconductor device

Superjunction device with improved ruggedness

Termination for a superjunction device

Superjunction device with improved ruggedness

High power silicon carbide and silicon semiconductor device package

Bidirectional shallow trench superjunction device with resurf region

Trench fill process

Lateral conduction superjunction semiconductor device

Method of preparing polysilicon FET built on silicon carbide diode...

High voltage vertical conduction superjunction semiconductor device

Polysilicon FET built on silicon carbide diode substrate

Superjunction device with self compensated trench walls

Angle implant process for cellular deep trench sidewall doping

MOSgated trench type power semiconductor with silicon carbide subst...

Patents Applicationslast 30 patents

Hybrid Semiconductor Device Having a GaN Transistor and a Silicon M...

Termination for a superjunction device

Hybrid semiconductor device

Superjunction device with improved ruggedness

Superjunction device with improved ruggedness

High power silicon carbide and silicon semiconductor device package

Bidirectional shallow trench superjunction device with resurf region

Trench fill process

Polysilicon fet built on silicon carbide diode substrate

POLYSILICON FET BUILT ON SILICON CARBIDE DIODE SUBSTRATE

Lateral superjunction semiconductor device

Superjunction device with self compensated trench walls

High voltage vertical conduction superjunction semiconductor device

Angle implant process for cellular deep trench sidewall doping