Srinath Krishnan

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Modeling gate transconductance in a sub-circuit transistor model
- Patent number 8,949,083
- Issue date Feb 3, 2015
- GLOBALFOUNDRIES Inc.
- Jia Feng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Shallow trench isolation process utilizing differential liners
- Patent number 7,768,095
- Issue date Aug 3, 2010
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process utilizing differential liners
- Patent number 7,626,242
- Issue date Dec 1, 2009
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation process utilizing differential liners
- Patent number 7,364,962
- Issue date Apr 29, 2008
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual SOI film thickness for body resistance control
- Patent number 7,253,068
- Issue date Aug 7, 2007
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual purpose test structure for gate-body current measurement in PD...
- Patent number 7,132,683
- Issue date Nov 7, 2006
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with structure for enhancing carrier recombination and m...
- Patent number 7,122,863
- Issue date Oct 17, 2006
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a test structure for gate-body current and direct...
- Patent number 7,071,044
- Issue date Jul 4, 2006
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tip architecture with SPE for buffer and deep source/drain regions
- Patent number 7,045,433
- Issue date May 16, 2006
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing as a channel region to reduce source/drain juncti...
- Patent number 6,955,969
- Issue date Oct 18, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a silicon-on-void structure and method of...
- Patent number 6,830,987
- Issue date Dec 14, 2004
- Advanced Micro Devices, Inc.
- Mario P. Pelella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a hybrid SOI device that suppresses floating body...
- Patent number 6,727,149
- Issue date Apr 27, 2004
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Patent number 6,717,212
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET having amorphized source drain and method of fabrication
- Patent number 6,713,819
- Issue date Mar 30, 2004
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-tied-to-body SOI CMOS inverter circuit
- Patent number 6,630,376
- Issue date Oct 7, 2003
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure, and a method of realizing, for efficient heat removal on...
- Patent number 6,613,643
- Issue date Sep 2, 2003
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with self alligned double gate and method o...
- Patent number 6,611,023
- Issue date Aug 26, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection...
- Patent number 6,589,823
- Issue date Jul 8, 2003
- Advanced Micro Devices, Inc.
- Stephen G. Beebe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multi-thickness silicide device formed by dis...
- Patent number 6,566,213
- Issue date May 20, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET and method of fabrication
- Patent number 6,548,361
- Issue date Apr 15, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with source/drain extensions and adjacent shallow pockets
- Patent number 6,541,821
- Issue date Apr 1, 2003
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for testing performance of silicon structures
- Patent number 6,535,015
- Issue date Mar 18, 2003
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- G01 - MEASURING TESTING
Information Patent Grant
Multi-Thickness silicide device formed by succesive spacers
- Patent number 6,518,631
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with structure for enhancing carrier recombination and m...
- Patent number 6,512,244
- Issue date Jan 28, 2003
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned floating body control for SOI device through leakage e...
- Patent number 6,509,613
- Issue date Jan 21, 2003
- Advanced Micro Devices, Inc.
- William George En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-tied-to-body SOI CMOS inverter circuit
- Patent number 6,498,371
- Issue date Dec 24, 2002
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Argon implantation after silicidation for improved floating-body ef...
- Patent number 6,495,887
- Issue date Dec 17, 2002
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively thin silicon film for creating fully and partially depl...
- Patent number 6,492,209
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit technique to deal with floating body effects
- Patent number 6,466,082
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) device with hyperabrupt source/dra...
- Patent number 6,465,847
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Modeling Gate Transconductance in a Sub-Circuit Transistor Model
- Publication number 20130030774
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Jia Feng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
- Publication number 20120306021
- Publication date Dec 6, 2012
- GLOBALFOUNDRIES INC.
- Srikanth SAMAVEDAM
- G11 - INFORMATION STORAGE
Information Patent Application
SHALLOW TRENCH ISOLATION PROCESS UTILIZING DIFFERENTIAL LINERS
- Publication number 20090294896
- Publication date Dec 3, 2009
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION PROCESS UTILIZING DIFFERENTIAL LINERS
- Publication number 20080164561
- Publication date Jul 10, 2008
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing as a channel region to reduce source/drain juncti...
- Publication number 20050048743
- Publication date Mar 3, 2005
- Advanced Micro Devices, Inc.
- Ihsan J. Djomehri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Publication number 20020185685
- Publication date Dec 12, 2002
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-thickness silicide device formed by disposable spacers
- Publication number 20020142524
- Publication date Oct 3, 2002
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS

Srinath Krishnan

Person

Patents Grantslast 30 patents

Modeling gate transconductance in a sub-circuit transistor model

Shallow trench isolation process utilizing differential liners

Shallow trench isolation process utilizing differential liners

Shallow trench isolation process utilizing differential liners

Dual SOI film thickness for body resistance control

Dual purpose test structure for gate-body current measurement in PD...

SOI device with structure for enhancing carrier recombination and m...

Method of making a test structure for gate-body current and direct...

Tip architecture with SPE for buffer and deep source/drain regions

Method of growing as a channel region to reduce source/drain juncti...

Semiconductor device with a silicon-on-void structure and method of...

Method of making a hybrid SOI device that suppresses floating body...

Leaky, thermally conductive insulator material (LTCIM) in semicondu...

SOI MOSFET having amorphized source drain and method of fabrication

Body-tied-to-body SOI CMOS inverter circuit

Structure, and a method of realizing, for efficient heat removal on...

Field effect transistor with self alligned double gate and method o...

Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection...

Method of fabricating multi-thickness silicide device formed by dis...

SOI MOSFET and method of fabrication

SOI device with source/drain extensions and adjacent shallow pockets

Device and method for testing performance of silicon structures

Multi-Thickness silicide device formed by succesive spacers

SOI device with structure for enhancing carrier recombination and m...

Self-aligned floating body control for SOI device through leakage e...

Body-tied-to-body SOI CMOS inverter circuit

Argon implantation after silicidation for improved floating-body ef...

Selectively thin silicon film for creating fully and partially depl...

Circuit technique to deal with floating body effects

Semiconductor-on-insulator (SOI) device with hyperabrupt source/dra...

Patents Applicationslast 30 patents

Modeling Gate Transconductance in a Sub-Circuit Transistor Model

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

SHALLOW TRENCH ISOLATION PROCESS UTILIZING DIFFERENTIAL LINERS

SHALLOW TRENCH ISOLATION PROCESS UTILIZING DIFFERENTIAL LINERS

Method of growing as a channel region to reduce source/drain juncti...

Leaky, thermally conductive insulator material (LTCIM) in semicondu...

Multi-thickness silicide device formed by disposable spacers