Stefan Flachowsky

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Device including a floating gate electrode and a layer of ferroelec...
- Patent number 11,424,253
- Issue date Aug 23, 2022
- NaMLab gGmbH
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional transistor with improved channel mobility
- Patent number 10,340,380
- Issue date Jul 2, 2019
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NVM device in SOI technology and method of fabricating an according...
- Patent number 10,084,057
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric FinFET
- Patent number 10,056,376
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator wafer, semiconductor structure including...
- Patent number 9,966,466
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a first transistor and a second t...
- Patent number 9,899,417
- Issue date Feb 20, 2018
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device including a floating gate electrode and...
- Patent number 9,865,608
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Inc.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method including a formation of a transistor and semiconductor stru...
- Patent number 9,685,457
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature independent resistor
- Patent number 9,583,240
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-fuse design for high-K metal-gate technology
- Patent number 9,515,155
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making transistor devices with elevated source/drain reg...
- Patent number 9,490,344
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Canyon gate transistor and methods for its fabrication
- Patent number 9,490,361
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES, INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a nanowire transistor device
- Patent number 9,484,407
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Tim Baldauf
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a semiconductor device structure and such a semic...
- Patent number 9,472,642
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric FinFET
- Patent number 9,449,972
- Issue date Sep 20, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including a gate electrode extending all around one or m...
- Patent number 9,443,945
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified gate-first HKMG manufacturing flow
- Patent number 9,431,508
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with high-k insulation layers
- Patent number 9,425,194
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with fets having nanowires and methods of manuf...
- Patent number 9,425,318
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES, INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a complex GAA FET device at advanced technology...
- Patent number 9,412,848
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact geometry having a gate silicon length decoupled from a tran...
- Patent number 9,412,859
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing transistor performance and reliability by incorporating d...
- Patent number 9,401,423
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate FETs having corrugated semiconductor stacks and method o...
- Patent number 9,391,176
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional transistor with improved channel mobility
- Patent number 9,373,720
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET doping method with curvilnear trajectory implantation beam path
- Patent number 9,373,509
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly conformal extension doping in advanced multi-gate devices
- Patent number 9,368,513
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for operating integrated circuits w...
- Patent number 9,368,506
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES, INC.
- Ricardo Pablo Mikalo
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective FuSi gate formation in gate first CMOS technologies
- Patent number 9,349,734
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient main spacer pull back process for advanced VLSI CMOS tech...
- Patent number 9,343,374
- Issue date May 17, 2016
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming transistors without spacers and resulting devices
- Patent number 9,324,831
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...
- Publication number 20180151577
- Publication date May 31, 2018
- Fraunhofer-Gesellschaft zur Foerderung der angewan dten Forschung e.V.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NVM DEVICE IN SOI TECHNOLOGY AND METHOD OF FABRICATING AN ACCORDING...
- Publication number 20180053832
- Publication date Feb 22, 2018
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR WAFER, SEMICONDUCTOR STRUCTURE INCLUDING...
- Publication number 20180040731
- Publication date Feb 8, 2018
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20170338350
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A FIRST TRANSISTOR AND A SECOND T...
- Publication number 20170200743
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD INCLUDING A FORMATION OF A TRANSISTOR AND SEMICONDUCTOR STRU...
- Publication number 20170025442
- Publication date Jan 26, 2017
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FINFET
- Publication number 20160358915
- Publication date Dec 8, 2016
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRAN...
- Publication number 20160315162
- Publication date Oct 27, 2016
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSELY PACKED TRANSISTOR DEVICES
- Publication number 20160300928
- Publication date Oct 13, 2016
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DEVICE INCLUDING A FLOATING GATE ELECTRODE AND...
- Publication number 20160268271
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL TRANSISTOR WITH IMPROVED CHANNEL MOBILITY
- Publication number 20160268426
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC FINFET
- Publication number 20160260714
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH FETS HAVING NANOWIRES AND METHODS OF MANUF...
- Publication number 20160254382
- Publication date Sep 1, 2016
- GLOBALFOUNDRIES, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A COMPLEX GAA FET DEVICE AT ADVANCED TECHNOLOGY...
- Publication number 20160233318
- Publication date Aug 11, 2016
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE...
- Publication number 20160204217
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SUCH A SEMIC...
- Publication number 20160163815
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEANDER RESISTOR
- Publication number 20160141393
- Publication date May 19, 2016
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFFICIENT MAIN SPACER PULL BACK PROCESS FOR ADVANCED VLSI CMOS TECH...
- Publication number 20160126146
- Publication date May 5, 2016
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE FETS HAVING CORRUGATED SEMICONDUCTOR STACKS AND METHOD O...
- Publication number 20160118483
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY CONFORMAL EXTENSION DOPING IN ADVANCED MULTI-GATE DEVICES
- Publication number 20160071886
- Publication date Mar 10, 2016
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD INCLUDING A REPLACEMENT OF A DUMMY GATE STRUCTURE WITH A GAT...
- Publication number 20160071947
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DOPING METHOD WITH CURVILINEAR TRAJECTORY IMPLANTATION BEAM...
- Publication number 20160071731
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE INDEPENDENT RESISTOR
- Publication number 20160064123
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FuSi GATE FORMATION IN GATE FIRST CMOS TECHNOLOGIES
- Publication number 20160064382
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING INTEGRATED CIRCUITS AND COMPONENTS THEREOF
- Publication number 20160064515
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES, Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...
- Publication number 20160064510
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Johannes Mueller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TRANSISTORS WITHOUT SPACERS AND RESULTING DEVICES
- Publication number 20160049494
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Gerd ZSCHÄTZSCH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A VERTICAL CAPACITOR AND RESULTING DEVICE
- Publication number 20160035818
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Jan HOENTSCHEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING IMPROVED CONTACTS AND METHODS FOR FABRIC...
- Publication number 20150372100
- Publication date Dec 24, 2015
- GLOBALFOUNDRIES, Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED STRESS-INDUCING LAYERS
- Publication number 20150348849
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Flachowsky

Person

Patents Grantslast 30 patents

Device including a floating gate electrode and a layer of ferroelec...

Three-dimensional transistor with improved channel mobility

NVM device in SOI technology and method of fabricating an according...

Ferroelectric FinFET

Semiconductor-on-insulator wafer, semiconductor structure including...

Semiconductor structure including a first transistor and a second t...

Method of forming a device including a floating gate electrode and...

Method including a formation of a transistor and semiconductor stru...

Temperature independent resistor

E-fuse design for high-K metal-gate technology

Methods of making transistor devices with elevated source/drain reg...

Canyon gate transistor and methods for its fabrication

Methods of forming a nanowire transistor device

Method of forming a semiconductor device structure and such a semic...

Ferroelectric FinFET

Transistor including a gate electrode extending all around one or m...

Simplified gate-first HKMG manufacturing flow

Transistor devices with high-k insulation layers

Integrated circuits with fets having nanowires and methods of manuf...

Methods of forming a complex GAA FET device at advanced technology...

Contact geometry having a gate silicon length decoupled from a tran...

Enhancing transistor performance and reliability by incorporating d...

Multi-gate FETs having corrugated semiconductor stacks and method o...

Three-dimensional transistor with improved channel mobility

FINFET doping method with curvilnear trajectory implantation beam path

Highly conformal extension doping in advanced multi-gate devices

Integrated circuits and methods for operating integrated circuits w...

Selective FuSi gate formation in gate first CMOS technologies

Efficient main spacer pull back process for advanced VLSI CMOS tech...

Forming transistors without spacers and resulting devices

Patents Applicationslast 30 patents

DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...

NVM DEVICE IN SOI TECHNOLOGY AND METHOD OF FABRICATING AN ACCORDING...

SEMICONDUCTOR-ON-INSULATOR WAFER, SEMICONDUCTOR STRUCTURE INCLUDING...

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE INCLUDING A FIRST TRANSISTOR AND A SECOND T...

METHOD INCLUDING A FORMATION OF A TRANSISTOR AND SEMICONDUCTOR STRU...

FERROELECTRIC FINFET

CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRAN...

DENSELY PACKED TRANSISTOR DEVICES

METHOD OF FORMING A DEVICE INCLUDING A FLOATING GATE ELECTRODE AND...

THREE-DIMENSIONAL TRANSISTOR WITH IMPROVED CHANNEL MOBILITY

FERROELECTRIC FINFET

INTEGRATED CIRCUITS WITH FETS HAVING NANOWIRES AND METHODS OF MANUF...

METHODS OF FORMING A COMPLEX GAA FET DEVICE AT ADVANCED TECHNOLOGY...

DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE...

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SUCH A SEMIC...

MEANDER RESISTOR

EFFICIENT MAIN SPACER PULL BACK PROCESS FOR ADVANCED VLSI CMOS TECH...

MULTI-GATE FETS HAVING CORRUGATED SEMICONDUCTOR STACKS AND METHOD O...

HIGHLY CONFORMAL EXTENSION DOPING IN ADVANCED MULTI-GATE DEVICES

METHOD INCLUDING A REPLACEMENT OF A DUMMY GATE STRUCTURE WITH A GAT...

FINFET DOPING METHOD WITH CURVILINEAR TRAJECTORY IMPLANTATION BEAM...

TEMPERATURE INDEPENDENT RESISTOR

SELECTIVE FuSi GATE FORMATION IN GATE FIRST CMOS TECHNOLOGIES

METHODS OF MAKING INTEGRATED CIRCUITS AND COMPONENTS THEREOF

DEVICE INCLUDING A FLOATING GATE ELECTRODE AND A LAYER OF FERROELEC...

FORMING TRANSISTORS WITHOUT SPACERS AND RESULTING DEVICES

FORMING A VERTICAL CAPACITOR AND RESULTING DEVICE

INTEGRATED CIRCUITS HAVING IMPROVED CONTACTS AND METHODS FOR FABRIC...

TRANSISTOR WITH EMBEDDED STRESS-INDUCING LAYERS