Stefan Gamerith

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Radiation-hardened power semiconductor devices and methods of formi...
- Patent number 10,256,325
- Issue date Apr 9, 2019
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction structure and transistor ce...
- Patent number 9,954,056
- Issue date Apr 24, 2018
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having pillar regions of differen...
- Patent number 9,947,741
- Issue date Apr 17, 2018
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VDMOS having a non-depletable extension zone formed between an acti...
- Patent number 9,773,863
- Issue date Sep 26, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Super junction semiconductor device having strip structures in a ce...
- Patent number 9,627,471
- Issue date Apr 18, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device having a compensation structure
- Patent number 9,570,596
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having alternating n-type and p-t...
- Patent number 9,570,607
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with charge compensation
- Patent number 9,537,003
- Issue date Jan 3, 2017
- Infineon Technologies Austria AG
- Hans Weber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Charge compensation semiconductor devices
- Patent number 9,209,292
- Issue date Dec 8, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-compensation semiconductor device
- Patent number 9,147,763
- Issue date Sep 29, 2015
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction structure semiconductor device based on a compensati...
- Patent number 9,117,694
- Issue date Aug 25, 2015
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device including a dielectric...
- Patent number 9,112,053
- Issue date Aug 18, 2015
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a super junction structure with one, two...
- Patent number 9,024,383
- Issue date May 5, 2015
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge compensation semiconductor device
- Patent number 8,866,222
- Issue date Oct 21, 2014
- Infineon Technologies Austria AG
- Hans Weber
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with charge compensation structure arrangement...
- Patent number 8,823,084
- Issue date Sep 2, 2014
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with self-charging field electrodes
- Patent number 8,716,788
- Issue date May 6, 2014
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an electrode structure
- Patent number 8,399,325
- Issue date Mar 19, 2013
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a gate electrode structure
- Patent number 8,288,230
- Issue date Oct 16, 2012
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device with Field Dielectric in an Edge Area
- Publication number 20170373140
- Publication date Dec 28, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction Structure and Transistor Ce...
- Publication number 20170221989
- Publication date Aug 3, 2017
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Pillar Regions of Differen...
- Publication number 20170148872
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Alternating N-Type and P-T...
- Publication number 20160064554
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD DIELECTRIC IN AN EDGE AREA
- Publication number 20150333168
- Publication date Nov 19, 2015
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Semiconductor Device having Strip Structures in a Ce...
- Publication number 20150325641
- Publication date Nov 12, 2015
- Infineon Technologies Austria AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Semiconductor Device having a Compensation Structure
- Publication number 20150214348
- Publication date Jul 30, 2015
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge-Compensation Semiconductor Device
- Publication number 20150084120
- Publication date Mar 26, 2015
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Semiconductor Devices
- Publication number 20150021670
- Publication date Jan 22, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Recombination Centers and Method of Manuf...
- Publication number 20140374882
- Publication date Dec 25, 2014
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Charge Compensation
- Publication number 20140346589
- Publication date Nov 27, 2014
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Super Junction Structure with One, Two...
- Publication number 20140327068
- Publication date Nov 6, 2014
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Super Junction Structure with Compensat...
- Publication number 20140327104
- Publication date Nov 6, 2014
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Structure Semiconductor Device Based on a Compensati...
- Publication number 20140327070
- Publication date Nov 6, 2014
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Semiconductor Device
- Publication number 20140183621
- Publication date Jul 3, 2014
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation-Hardened Power Semiconductor Devices and Methods of Formi...
- Publication number 20140124851
- Publication date May 8, 2014
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Semiconductor Device
- Publication number 20130234761
- Publication date Sep 12, 2013
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES
- Publication number 20130082322
- Publication date Apr 4, 2013
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC...
- Publication number 20130005099
- Publication date Jan 3, 2013
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING AN ELECTRODE STRUCTURE
- Publication number 20120083085
- Publication date Apr 5, 2012
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A GATE ELECTRODE STRUCTURE
- Publication number 20120083081
- Publication date Apr 5, 2012
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING AN IMIDE LAYER WITH NON-CONTACT OPENINGS AND METHOD
- Publication number 20100007028
- Publication date Jan 14, 2010
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Gamerith

Person

Patents Grantslast 30 patents

Radiation-hardened power semiconductor devices and methods of formi...

Semiconductor device with superjunction structure and transistor ce...

Field-effect semiconductor device having pillar regions of differen...

VDMOS having a non-depletable extension zone formed between an acti...

Super junction semiconductor device having strip structures in a ce...

Super junction semiconductor device having a compensation structure

Field-effect semiconductor device having alternating n-type and p-t...

Semiconductor device with charge compensation

Charge compensation semiconductor devices

Charge-compensation semiconductor device

Super junction structure semiconductor device based on a compensati...

Method for producing a semiconductor device including a dielectric...

Semiconductor device with a super junction structure with one, two...

Charge compensation semiconductor device

Semiconductor device with charge compensation structure arrangement...

Semiconductor device with self-charging field electrodes

Method for producing an electrode structure

Method for producing a gate electrode structure

Patents Applicationslast 30 patents

Semiconductor Device with Field Dielectric in an Edge Area

Semiconductor Device with Superjunction Structure and Transistor Ce...

Field-Effect Semiconductor Device Having Pillar Regions of Differen...

Field-Effect Semiconductor Device Having Alternating N-Type and P-T...

SEMICONDUCTOR DEVICE WITH FIELD DIELECTRIC IN AN EDGE AREA

Super Junction Semiconductor Device having Strip Structures in a Ce...

Super Junction Semiconductor Device having a Compensation Structure

Charge-Compensation Semiconductor Device

Charge Compensation Semiconductor Devices

Semiconductor Device with Recombination Centers and Method of Manuf...

Semiconductor Device with Charge Compensation

Semiconductor Device with a Super Junction Structure with One, Two...

Semiconductor Device with a Super Junction Structure with Compensat...

Super Junction Structure Semiconductor Device Based on a Compensati...

Charge Compensation Semiconductor Device

Radiation-Hardened Power Semiconductor Devices and Methods of Formi...

Charge Compensation Semiconductor Device

SEMICONDUCTOR DEVICE WITH SELF-CHARGING FIELD ELECTRODES

METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC...

METHOD FOR PRODUCING AN ELECTRODE STRUCTURE

METHOD FOR PRODUCING A GATE ELECTRODE STRUCTURE

DEVICE INCLUDING AN IMIDE LAYER WITH NON-CONTACT OPENINGS AND METHOD