Stefan Gernhardt

Person

Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,378,700
- Issue date May 27, 2008
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ferrocapacitors and FeRAM devices
- Patent number 7,316,980
- Issue date Jan 8, 2008
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a contact in a device, and the device including the co...
- Patent number 7,101,785
- Issue date Sep 5, 2006
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,061,035
- Issue date Jun 13, 2006
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Patent number 7,001,780
- Issue date Feb 21, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-wall barrier structure and method of fabrication
- Patent number 6,946,735
- Issue date Sep 20, 2005
- Infineon AG
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation protection in integrated circuits
- Patent number 6,940,111
- Issue date Sep 6, 2005
- Infineon Technologies Aktiengesellschaft
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer barrier allowing recovery anneal for ferroelectric capa...
- Patent number 6,839,220
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing stress in integrated circuits
- Patent number 6,815,234
- Issue date Nov 9, 2004
- Infineon Technologies Aktiengesellschaft
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned V0-contact for cell size reduction
- Publication number 20060151819
- Publication date Jul 13, 2006
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned Vo-contact for cell size reduction
- Publication number 20050082583
- Publication date Apr 21, 2005
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ferrocapacitors and FeRAM devices
- Publication number 20050074979
- Publication date Apr 7, 2005
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Publication number 20050029563
- Publication date Feb 10, 2005
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of a contact in a device, and the device including the co...
- Publication number 20050020054
- Publication date Jan 27, 2005
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPA...
- Publication number 20050013091
- Publication date Jan 20, 2005
- Andreas Hilliger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of electrode re-crystallisation in a ferrocapacitor
- Publication number 20040201049
- Publication date Oct 14, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming electrical connections within ferroelectric devices
- Publication number 20040163233
- Publication date Aug 26, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING STRESS IN INTEGRATED CIRCUITS
- Publication number 20040124452
- Publication date Jul 1, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation protection in integrated circuits
- Publication number 20040104754
- Publication date Jun 3, 2004
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Side-wall barrier structure and method of fabrication
- Publication number 20040104471
- Publication date Jun 3, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for producing thin layers, such as for use in integrated ci...
- Publication number 20040087080
- Publication date May 6, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS

Stefan Gernhardt

Person

Patents Grantslast 30 patents

Self-aligned V0-contact for cell size reduction

Method for forming ferrocapacitors and FeRAM devices

Formation of a contact in a device, and the device including the co...

Self-aligned V0-contact for cell size reduction

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

Side-wall barrier structure and method of fabrication

Radiation protection in integrated circuits

Multi-layer barrier allowing recovery anneal for ferroelectric capa...

Reducing stress in integrated circuits

Patents Applicationslast 30 patents

Self-aligned V0-contact for cell size reduction

Self-aligned Vo-contact for cell size reduction

Method for forming ferrocapacitors and FeRAM devices

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

Formation of a contact in a device, and the device including the co...

MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPA...

Suppression of electrode re-crystallisation in a ferrocapacitor

Methods of forming electrical connections within ferroelectric devices

REDUCING STRESS IN INTEGRATED CIRCUITS

Radiation protection in integrated circuits

Side-wall barrier structure and method of fabrication

Methods for producing thin layers, such as for use in integrated ci...