Stefania FORTUNA

Person

Aci Bonaccorsi, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Power MOSFET device having improved safe-operating area and on resi...
- Patent number 11,728,422
- Issue date Aug 15, 2023
- STMicroelectronics S.r.l.
- Angelo Magri'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power device on a semiconductor substrate having an impr...
- Patent number 9,520,468
- Issue date Dec 13, 2016
- STMicroelectronics S.R.L.
- Angelo Magri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET
- Patent number 9,006,063
- Issue date Apr 14, 2015
- STMicroelectronics S.r.l.
- Yean Ching Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power device on a semiconductor substrate having an impr...
- Patent number 8,664,713
- Issue date Mar 4, 2014
- STMicroelectronics S.r.l.
- Angelo Magri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated power device having gate str...
- Patent number 8,637,369
- Issue date Jan 28, 2014
- STMicroelectronics S.r.l.
- Angelo Magri
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...
- Publication number 20230420557
- Publication date Dec 28, 2023
- STMicroelectronics S.r.l.
- Angelo MAGRI'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...
- Publication number 20210151599
- Publication date May 20, 2021
- STMicroelectronics S.r.l.
- Angelo MAGRI'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF MANUFACTURING METHODOLOGY: P-CHANNEL TRENCH MOS WIT...
- Publication number 20150001615
- Publication date Jan 1, 2015
- STMICROELECTRONICS ASIA PACIFIC PTE, LTD.
- Yean Ching Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED POWER DEVICE ON A SEMICONDUCTOR SUBSTRATE HAVING AN IMPR...
- Publication number 20140138739
- Publication date May 22, 2014
- STMicroelectronics S.r.l.
- Angelo MAGRI'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN INTEGRATED POWER DEVICE ON A SEMICONDUC...
- Publication number 20120220090
- Publication date Aug 30, 2012
- STMicroelectronics S.r. I.
- Angelo MAGRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING AN INTEGRATED POWER DEVICE ON A SEMICONDUC...
- Publication number 20100163978
- Publication date Jul 1, 2010
- STMicroelectronics S.r.l.
- Angelo MAGRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE WITH INSULATED GATE FORMED IN A TRENCH,...
- Publication number 20070063272
- Publication date Mar 22, 2007
- STMicroelectronics S.r.l.
- Giuseppe Arena
- H01 - BASIC ELECTRIC ELEMENTS

Stefania FORTUNA

Person

Patents Grantslast 30 patents

Power MOSFET device having improved safe-operating area and on resi...

Integrated power device on a semiconductor substrate having an impr...

Trench MOSFET

Integrated power device on a semiconductor substrate having an impr...

Method for manufacturing an integrated power device having gate str...

Patents Applicationslast 30 patents

POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...

POWER MOSFET DEVICE HAVING IMPROVED SAFE-OPERATING AREA AND ON RESI...

OPTIMIZATION OF MANUFACTURING METHODOLOGY: P-CHANNEL TRENCH MOS WIT...

INTEGRATED POWER DEVICE ON A SEMICONDUCTOR SUBSTRATE HAVING AN IMPR...

METHOD FOR MANUFACTURING AN INTEGRATED POWER DEVICE ON A SEMICONDUC...

METHOD FOR MANUFACTURING AN INTEGRATED POWER DEVICE ON A SEMICONDUC...

SEMICONDUCTOR POWER DEVICE WITH INSULATED GATE FORMED IN A TRENCH,...