Stephan Wirths

Person

Thalwil, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide transistor device
- Patent number 12,062,698
- Issue date Aug 13, 2024
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical silicon carbide power MOSFET and IGBT and a method of manu...
- Patent number 11,967,616
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasmonic quantum well laser
- Patent number 10,965,101
- Issue date Mar 30, 2021
- International Business Machines Corporation
- Heinz Schmid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasmonic quantum well laser
- Patent number 10,566,764
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Heinz Schmid
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...
- Publication number 20240222462
- Publication date Jul 4, 2024
- Hitachi Energy Ltd
- Vinoth SUNDARAMOORTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240079454
- Publication date Mar 7, 2024
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...
- Publication number 20240055495
- Publication date Feb 15, 2024
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD
- Publication number 20230411510
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230411514
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Structure, Wide Bandgap Material Power Device With t...
- Publication number 20230187525
- Publication date Jun 15, 2023
- Hitachi Energy Switzerland AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...
- Publication number 20220302309
- Publication date Sep 22, 2022
- Hitachi Energy Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Transistor Device
- Publication number 20220278205
- Publication date Sep 1, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...
- Publication number 20220028976
- Publication date Jan 27, 2022
- ABB Power Grids Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMONIC QUANTUM WELL LASER
- Publication number 20200083667
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Heinz Schmid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMONIC QUANTUM WELL LASER
- Publication number 20190386453
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Heinz Schmid
- H01 - BASIC ELECTRIC ELEMENTS

Stephan Wirths

Person

Patents Grantslast 30 patents

Silicon carbide transistor device

Vertical silicon carbide power MOSFET and IGBT and a method of manu...

Plasmonic quantum well laser

Plasmonic quantum well laser

Patents Applicationslast 30 patents

METHOD FOR FORMING AN OHMIC CONTACT ON A WIDE-BANDGAP SEMICONDUCTOR...

SILICON CARBIDE POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...

POWER FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD

POWER SEMICONDUCTOR DEVICE

Insulated Gate Structure, Wide Bandgap Material Power Device With t...

Strain Enhanced SiC Power Semiconductor Device and Method of Manufa...

Silicon Carbide Transistor Device

A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...

PLASMONIC QUANTUM WELL LASER

PLASMONIC QUANTUM WELL LASER