Stephen Daley Arthur

Person

Scotia, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 12,191,384
- Issue date Jan 7, 2025
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination of wide band gap super...
- Patent number 11,764,257
- Issue date Sep 19, 2023
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor devices having improved electric field s...
- Patent number 11,538,769
- Issue date Dec 27, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 11,417,759
- Issue date Aug 16, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination in semiconductor devices
- Patent number 11,271,076
- Issue date Mar 8, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination of wide band gap super...
- Patent number 11,245,003
- Issue date Feb 8, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for unipolar charge balanced semiconductor powe...
- Patent number 11,233,157
- Issue date Jan 25, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating planar charge balanced (CB) metal-oxide-...
- Patent number 11,069,772
- Issue date Jul 20, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating charge balanced (CB) trench-metal-oxide-...
- Patent number 11,056,586
- Issue date Jul 6, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for termination in silicon carbide charge balan...
- Patent number 10,957,759
- Issue date Mar 23, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered gate electrode for semiconductor devices
- Patent number 10,903,330
- Issue date Jan 26, 2021
- General Electric Company
- Richard Joseph Saia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating high voltage semiconductor devices having im...
- Patent number 10,892,237
- Issue date Jan 12, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 10,367,089
- Issue date Jul 30, 2019
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and switching system comprising silicon carbide and oxid...
- Patent number 9,735,263
- Issue date Aug 15, 2017
- General Electric Company
- Stephen Daley Arthur
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and method for reduced bias temperature instab...
- Patent number 9,576,868
- Issue date Feb 21, 2017
- General Electric Company
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with junction termination extension
- Patent number 9,406,762
- Issue date Aug 2, 2016
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for transient voltage suppression
- Patent number 9,379,189
- Issue date Jun 28, 2016
- General Electric Company
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having reduced bias temperature instability (BTI)
- Patent number 9,257,283
- Issue date Feb 9, 2016
- General Electric Company
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate field effect transistor device and method for provi...
- Patent number 9,123,798
- Issue date Sep 1, 2015
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for terminating junctions in wide bandgap semic...
- Patent number 9,006,027
- Issue date Apr 14, 2015
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for transient voltage suppression
- Patent number 8,987,858
- Issue date Mar 24, 2015
- General Electric Company
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,815,721
- Issue date Aug 26, 2014
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for transient voltage suppressors
- Patent number 8,765,524
- Issue date Jul 1, 2014
- General Electric Company
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically triggered semiconductor device and method for making the...
- Patent number 8,691,634
- Issue date Apr 8, 2014
- General Electric Company
- Ahmed Elasser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,536,641
- Issue date Sep 17, 2013
- General Electric Company
- Ramakrishna Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for transient voltage suppressors
- Patent number 8,530,902
- Issue date Sep 10, 2013
- General Electric Company
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide MOSFET cell structure and method for forming same
- Patent number 8,507,986
- Issue date Aug 13, 2013
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor module and fabrication method
- Patent number 8,466,007
- Issue date Jun 18, 2013
- General Electric Company
- Eladio Clemente Delgado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide MOSFET cell structure and method for forming same
- Patent number 8,377,756
- Issue date Feb 19, 2013
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFETs and self-aligned fabrication methods thereof
- Patent number 8,377,812
- Issue date Feb 19, 2013
- General Electric Company
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...
- Publication number 20220130953
- Publication date Apr 28, 2022
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...
- Publication number 20210288180
- Publication date Sep 16, 2021
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION IN SEMICONDUCTOR DEVICES
- Publication number 20200203476
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR TERMINATION IN SILICON CARBIDE CHARGE BALAN...
- Publication number 20200203487
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...
- Publication number 20200203477
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD U...
- Publication number 20200194387
- Publication date Jun 18, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IM...
- Publication number 20200194388
- Publication date Jun 18, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING PLANAR CHARGE BALANCED (CB) METAL-OXIDE-...
- Publication number 20200194546
- Publication date Jun 18, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...
- Publication number 20200105944
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...
- Publication number 20200105925
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY
- Publication number 20190363183
- Publication date Nov 28, 2019
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
- Publication number 20160307997
- Publication date Oct 20, 2016
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING...
- Publication number 20160087091
- Publication date Mar 24, 2016
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS FOR MANUFACTURIN...
- Publication number 20150236151
- Publication date Aug 20, 2015
- GENERAL ELECTRIC COMPANY
- James Jay McMahon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSION
- Publication number 20150187884
- Publication date Jul 2, 2015
- GENERAL ELECTRIC COMPANY
- Avinash SRIKRISHNAN KASHYAP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES
- Publication number 20150144960
- Publication date May 28, 2015
- GENERAL ELECTRIC COMPANY
- Richard Joseph Saia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
- Publication number 20150115284
- Publication date Apr 30, 2015
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140361315
- Publication date Dec 11, 2014
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSION
- Publication number 20140264775
- Publication date Sep 18, 2014
- GENERAL ELECTRIC COMPANY
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING GATE FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR PROVI...
- Publication number 20140159141
- Publication date Jun 12, 2014
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMIC...
- Publication number 20140070229
- Publication date Mar 13, 2014
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI)
- Publication number 20140034963
- Publication date Feb 6, 2014
- GENERAL ELECTRIC COMPANY
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTAB...
- Publication number 20140027782
- Publication date Jan 30, 2014
- GENERAL ELECTRIC COMPANY
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS
- Publication number 20130328064
- Publication date Dec 12, 2013
- GENERAL ELECTRIC COMPANY
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE...
- Publication number 20130323873
- Publication date Dec 5, 2013
- GENERAL ELECTRIC COMPANY
- AHMED ELASSER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130221374
- Publication date Aug 29, 2013
- GENERAL ELECTRIC COMPANY
- Ramakrishna Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
- Publication number 20130146898
- Publication date Jun 13, 2013
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20130126971
- Publication date May 23, 2013
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS
- Publication number 20130105816
- Publication date May 2, 2013
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY
- Publication number 20130075756
- Publication date Mar 28, 2013
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS

Stephen Daley Arthur

Person

Patents Grantslast 30 patents

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Systems and methods for junction termination of wide band gap super...

High voltage semiconductor devices having improved electric field s...

Semiconductor device and method for reduced bias threshold instability

Systems and methods for junction termination in semiconductor devices

Systems and methods for junction termination of wide band gap super...

Systems and methods for unipolar charge balanced semiconductor powe...

Techniques for fabricating planar charge balanced (CB) metal-oxide-...

Techniques for fabricating charge balanced (CB) trench-metal-oxide-...

Systems and methods for termination in silicon carbide charge balan...

Tapered gate electrode for semiconductor devices

Methods of fabricating high voltage semiconductor devices having im...

Semiconductor device and method for reduced bias threshold instability

Transistor and switching system comprising silicon carbide and oxid...

Semiconductor device and method for reduced bias temperature instab...

Semiconductor device with junction termination extension

Method and system for transient voltage suppression

Device having reduced bias temperature instability (BTI)

Insulating gate field effect transistor device and method for provi...

Systems and methods for terminating junctions in wide bandgap semic...

Method and system for transient voltage suppression

Semiconductor device and method of manufacturing the same

Method and system for transient voltage suppressors

Optically triggered semiconductor device and method for making the...

Semiconductor device

System for transient voltage suppressors

Silicon-carbide MOSFET cell structure and method for forming same

Power semiconductor module and fabrication method

Silicon-carbide MOSFET cell structure and method for forming same

SiC MOSFETs and self-aligned fabrication methods thereof

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...

TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...

SYSTEMS AND METHODS FOR JUNCTION TERMINATION IN SEMICONDUCTOR DEVICES

SYSTEMS AND METHODS FOR TERMINATION IN SILICON CARBIDE CHARGE BALAN...

SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...

HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD U...

METHODS OF FABRICATING HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IM...

TECHNIQUES FOR FABRICATING PLANAR CHARGE BALANCED (CB) METAL-OXIDE-...

SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...

TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY

SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION

INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING...

SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS FOR MANUFACTURIN...

METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSION

TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSION

INSULATING GATE FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR PROVI...

SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMIC...

DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI)

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS TEMPERATURE INSTAB...

METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS

OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE...

SEMICONDUCTOR DEVICE

SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF

SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME

METHOD AND SYSTEM FOR TRANSIENT VOLTAGE SUPPRESSORS

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY