Steve Hudgens

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Programmable resistance memory
- Patent number 8,908,413
- Issue date Dec 9, 2014
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor phase change memory using face center cubic crystalli...
- Patent number 8,699,267
- Issue date Apr 15, 2014
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing phase change material to improve programming speed
- Patent number 8,658,510
- Issue date Feb 25, 2014
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor phase change memory using multiple phase change layers
- Patent number 8,462,545
- Issue date Jun 11, 2013
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing phase change material to improve programming speed
- Patent number 8,269,206
- Issue date Sep 18, 2012
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor phast change memory using multiple phase change layers
- Patent number 8,223,538
- Issue date Jul 17, 2012
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including phase-change material
- Patent number 8,222,625
- Issue date Jul 17, 2012
- Samsung Electronics Co., Ltd.
- Dong-ho Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor phase change memory using multiple phase change layers
- Patent number 8,098,519
- Issue date Jan 17, 2012
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memories with improved programming characteristics
- Patent number 8,062,921
- Issue date Nov 22, 2011
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistance memory
- Patent number 8,009,455
- Issue date Aug 30, 2011
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing phase change material to improve programming speed
- Patent number 7,893,419
- Issue date Feb 22, 2011
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor phase change memory using multiple phase change layers
- Patent number 7,729,162
- Issue date Jun 1, 2010
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically rewritable non-volatile memory element and method of m...
- Patent number 7,589,364
- Issue date Sep 15, 2009
- Elpida Memory, Inc.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistance memory element with multi-regioned contact
- Patent number 7,576,350
- Issue date Aug 18, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel programming of phase change memory cells
- Patent number 7,515,460
- Issue date Apr 7, 2009
- Intel Corporation
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memories with improved programming characteristics
- Patent number 7,504,675
- Issue date Mar 17, 2009
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel programming of phase change memory cells
- Patent number 7,391,642
- Issue date Jun 24, 2008
- Intel Corporation
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered phase change memory
- Patent number 7,381,611
- Issue date Jun 3, 2008
- Intel Corporation
- Brian G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically programmable memory element with reduced area of contact
- Patent number 7,092,286
- Issue date Aug 15, 2006
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple layer phase-change memory
- Patent number 6,998,289
- Issue date Feb 14, 2006
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Accessing phase change memories
- Patent number 6,990,017
- Issue date Jan 24, 2006
- Intel Corporation
- Ward D. Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory element with indirect heating
- Patent number 6,969,869
- Issue date Nov 29, 2005
- Ovonyx, Inc.
- Steve Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable memory element with reduced area of conta...
- Patent number 6,943,365
- Issue date Sep 13, 2005
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making programmable resistance memory element
- Patent number 6,927,093
- Issue date Aug 9, 2005
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified contact for programmable devices
- Patent number 6,917,052
- Issue date Jul 12, 2005
- Ovonyx, Inc.
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified contact for programmable devices
- Patent number 6,774,388
- Issue date Aug 10, 2004
- Ovonyx, Inc.
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making programmable resistance memory element
- Patent number 6,764,897
- Issue date Jul 20, 2004
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making programmable resistance memory element
- Patent number 6,750,079
- Issue date Jun 15, 2004
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced area intersection between electrode and programming element
- Patent number 6,673,700
- Issue date Jan 6, 2004
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple layer phrase-change memory
- Patent number 6,674,115
- Issue date Jan 6, 2004
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Phase Change Memory Using Face Center Cubic Crystalli...
- Publication number 20130270502
- Publication date Oct 17, 2013
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Processing Phase Change Material to Improve Programming Speed
- Publication number 20120309161
- Publication date Dec 6, 2012
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
- Publication number 20120256154
- Publication date Oct 11, 2012
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR PHAST CHANGE MEMORY USING MULTIPLE PHASE CHANGE LAYERS
- Publication number 20120081956
- Publication date Apr 5, 2012
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Resistance Memory
- Publication number 20110305075
- Publication date Dec 15, 2011
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Processing Phase Change Material to Improve Programming Speed
- Publication number 20110168964
- Publication date Jul 14, 2011
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
- Publication number 20100200829
- Publication date Aug 12, 2010
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory
- Publication number 20100182825
- Publication date Jul 22, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus and method for memory
- Publication number 20100059729
- Publication date Mar 11, 2010
- Ovonyx, Inc.
- Stephen Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memories With Improved Programming Characteristics
- Publication number 20090142882
- Publication date Jun 4, 2009
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor phase change memory using multiple phase change layers
- Publication number 20090091971
- Publication date Apr 9, 2009
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memories with improved programming characteristics
- Publication number 20080203376
- Publication date Aug 28, 2008
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Refreshing a phase change memory
- Publication number 20070279975
- Publication date Dec 6, 2007
- Stephen J. Hudgens
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically rewritable non-volatile memory element and method of m...
- Publication number 20070096074
- Publication date May 3, 2007
- ELPIDA MEMORY, INC.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilevel programming of phase change memory cells
- Publication number 20070077699
- Publication date Apr 5, 2007
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically programmable memory element with reduced area of contact
- Publication number 20060274575
- Publication date Dec 7, 2006
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Using an electron beam to write phase change memory devices
- Publication number 20060183335
- Publication date Aug 17, 2006
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilevel programming of phase change memory cells
- Publication number 20060166455
- Publication date Jul 27, 2006
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically programmable memory element with reduced area of contact
- Publication number 20060006443
- Publication date Jan 12, 2006
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
ACCESSING PHASE CHANGE MEMORIES
- Publication number 20060002173
- Publication date Jan 5, 2006
- Ward D. Parkinson
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically programmable memory element with reduced area of conta...
- Publication number 20050201136
- Publication date Sep 15, 2005
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Processing phase change material to improve programming speed
- Publication number 20050029502
- Publication date Feb 10, 2005
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayered phase change memory
- Publication number 20050030800
- Publication date Feb 10, 2005
- Brian G. Johnson
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory element with multi-regioned contact
- Publication number 20050003602
- Publication date Jan 6, 2005
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Modified contact for programmable devices
- Publication number 20040222445
- Publication date Nov 11, 2004
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making programmable resistance memory element
- Publication number 20040175857
- Publication date Sep 9, 2004
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory element with indirect heating
- Publication number 20040140523
- Publication date Jul 22, 2004
- Steve Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using an electron beam to write phase change memory devices
- Publication number 20040115945
- Publication date Jun 17, 2004
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced area intersection between electrode and programming element
- Publication number 20040087076
- Publication date May 6, 2004
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making programmable resistance memory element
- Publication number 20040038445
- Publication date Feb 26, 2004
- Tyler Lowrey
- G11 - INFORMATION STORAGE

Steve Hudgens

Person

Patents Grantslast 30 patents

Programmable resistance memory

Semiconductor phase change memory using face center cubic crystalli...

Processing phase change material to improve programming speed

Semiconductor phase change memory using multiple phase change layers

Processing phase change material to improve programming speed

Semiconductor phast change memory using multiple phase change layers

Non-volatile memory device including phase-change material

Semiconductor phase change memory using multiple phase change layers

Phase change memories with improved programming characteristics

Programmable resistance memory

Processing phase change material to improve programming speed

Semiconductor phase change memory using multiple phase change layers

Electrically rewritable non-volatile memory element and method of m...

Programmable resistance memory element with multi-regioned contact

Multilevel programming of phase change memory cells

Phase change memories with improved programming characteristics

Multilevel programming of phase change memory cells

Multilayered phase change memory

Electrically programmable memory element with reduced area of contact

Multiple layer phase-change memory

Accessing phase change memories

Programmable resistance memory element with indirect heating

Electrically programmable memory element with reduced area of conta...

Method for making programmable resistance memory element

Modified contact for programmable devices

Modified contact for programmable devices

Method of making programmable resistance memory element

Method for making programmable resistance memory element

Reduced area intersection between electrode and programming element

Multiple layer phrase-change memory

Patents Applicationslast 30 patents

Semiconductor Phase Change Memory Using Face Center Cubic Crystalli...

Processing Phase Change Material to Improve Programming Speed

Semiconductor Phase Change Memory Using Multiple Phase Change Layers

SEMICONDUCTOR PHAST CHANGE MEMORY USING MULTIPLE PHASE CHANGE LAYERS

Programmable Resistance Memory

Processing Phase Change Material to Improve Programming Speed

Semiconductor Phase Change Memory Using Multiple Phase Change Layers

Programmable resistance memory

Apparatus and method for memory

Phase Change Memories With Improved Programming Characteristics

Semiconductor phase change memory using multiple phase change layers

Phase change memories with improved programming characteristics

Refreshing a phase change memory

Electrically rewritable non-volatile memory element and method of m...

Multilevel programming of phase change memory cells

Electrically programmable memory element with reduced area of contact

Using an electron beam to write phase change memory devices

Multilevel programming of phase change memory cells

Electrically programmable memory element with reduced area of contact

ACCESSING PHASE CHANGE MEMORIES

Electrically programmable memory element with reduced area of conta...

Processing phase change material to improve programming speed

Multilayered phase change memory

Programmable resistance memory element with multi-regioned contact

Modified contact for programmable devices

Method for making programmable resistance memory element

Programmable resistance memory element with indirect heating

Using an electron beam to write phase change memory devices

Reduced area intersection between electrode and programming element

Method of making programmable resistance memory element