Steven P. Consiglio

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 11,700,778
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Steven Consiglio
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 10,991,881
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid source doping for source and drain extension doping
- Patent number 9,978,649
- Issue date May 22, 2018
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling solid phase diffusion of boron dopants to for...
- Patent number 9,899,224
- Issue date Feb 20, 2018
- Tokyo Electron Limited
- Steven P. Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ALD barrier layer and CVD Ru liner for void-free Cu...
- Patent number 9,607,888
- Issue date Mar 28, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitridation of atomic layer deposited high-k dielectrics using tris...
- Patent number 9,064,694
- Issue date Jun 23, 2015
- Tokyo Electron Limited
- Steven P Consiglio
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Structures and techniques for atomic layer deposition
- Patent number 8,722,548
- Issue date May 13, 2014
- International Business Machines Corporation
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Silicidation Process for Semiconductor Devices
- Publication number 20230326764
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BILAYER DIELECTRIC STACK FOR A FERROELECTRIC TUNNEL JUNCTION AND ME...
- Publication number 20220223608
- Publication date Jul 14, 2022
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DIELECTRIC MATERIALS WITH SELECTED POLARIZATION...
- Publication number 20220044922
- Publication date Feb 10, 2022
- TOKYO ELECTRON LIMITED
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20210234096
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20200381624
- Publication date Dec 3, 2020
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID SOURCE DOPING FOR SOURCE AND DRAIN EXTENSION DOPING
- Publication number 20170271212
- Publication date Sep 21, 2017
- TOKYO ELECTRON LIMITED
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING
- Publication number 20170084464
- Publication date Mar 23, 2017
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING SOLID PHASE DIFFUSION OF BORON DOPANTS TO FOR...
- Publication number 20160260611
- Publication date Sep 8, 2016
- TOKYO ELECTRON LIMITED
- Steven P. Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Aluminum-doped High-k Films
- Publication number 20150255267
- Publication date Sep 10, 2015
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...
- Publication number 20150221550
- Publication date Aug 6, 2015
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRIS...
- Publication number 20140017907
- Publication date Jan 16, 2014
- Steven P. Consiglio
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Structures And Techniques For Atomic Layer Deposition
- Publication number 20120074533
- Publication date Mar 29, 2012
- Tokyo Electron (TEL)Limited
- Shintaro Aoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for performing preventative maintenance in a substrate proce...
- Publication number 20110220148
- Publication date Sep 15, 2011
- TOKYO ELECTRON LIMITED
- Steven P. CONSIGLIO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Steven P. Consiglio

Person

Patents Grantslast 30 patents

Method for controlling the forming voltage in resistive random acce...

Method for controlling the forming voltage in resistive random acce...

Solid source doping for source and drain extension doping

Method of controlling solid phase diffusion of boron dopants to for...

Integration of ALD barrier layer and CVD Ru liner for void-free Cu...

Nitridation of atomic layer deposited high-k dielectrics using tris...

Structures and techniques for atomic layer deposition

Patents Applicationslast 30 patents

Silicidation Process for Semiconductor Devices

BILAYER DIELECTRIC STACK FOR A FERROELECTRIC TUNNEL JUNCTION AND ME...

METHODS FOR FORMING DIELECTRIC MATERIALS WITH SELECTED POLARIZATION...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

SOLID SOURCE DOPING FOR SOURCE AND DRAIN EXTENSION DOPING

GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING

METHOD OF CONTROLLING SOLID PHASE DIFFUSION OF BORON DOPANTS TO FOR...

Atomic Layer Deposition of Aluminum-doped High-k Films

INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu...

NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRIS...

Structures And Techniques For Atomic Layer Deposition

Method for performing preventative maintenance in a substrate proce...