Steven R.A. Van Aerde

Person

Tielt-Winge, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a structure with a hole
- Patent number 12,040,229
- Issue date Jul 16, 2024
- ASM IP Holding B.V.
- Dieter Pierreux
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming a layer provided with silicon
- Patent number 11,646,204
- Issue date May 9, 2023
- ASM IP Holding B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for filling a gap
- Patent number 11,610,775
- Issue date Mar 21, 2023
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming a structure with a hole
- Patent number 11,594,450
- Issue date Feb 28, 2023
- ASM IP Holding B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing a semiconductor device with silicon filled gaps
- Patent number 11,501,968
- Issue date Nov 15, 2022
- ASM IP Holding B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and method
- Patent number 11,230,766
- Issue date Jan 25, 2022
- ASM IP Holding B.V.
- Dieter Pierreux
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with amorphous silicon filled gaps and methods...
- Patent number 10,460,932
- Issue date Oct 29, 2019
- ASM IP Holding B.V.
- Steven R. A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming semiconductor device by providing an amorphous silicon core...
- Patent number 10,453,685
- Issue date Oct 22, 2019
- ASM IP Holding B.V.
- Kelly Houben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming silicon-filled openings with a reduced occurren...
- Patent number 9,837,271
- Issue date Dec 5, 2017
- ASM IP Holding B.V.
- Steven R. A. Van Aerde
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for filling a gap
- Patent number 9,812,320
- Issue date Nov 7, 2017
- ASM IP Holding B.V.
- Viljami Pore
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for forming silicon-filled openings with a reduced occurren...
- Patent number 9,443,730
- Issue date Sep 13, 2016
- ASM IP Holding B.V.
- Steven R. A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing films on semiconductor wafers
- Patent number 9,343,304
- Issue date May 17, 2016
- ASM IP Holding B.V.
- Frank Huussen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Prevention of oxidation of substrate surfaces in process chambers
- Patent number 8,507,388
- Issue date Aug 13, 2013
- ASM International N.V.
- Steven R. A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature doped silicon layer formation
- Patent number 7,718,518
- Issue date May 18, 2010
- ASM International N.V.
- Peter Marc Zagwijn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a silicon dioxide layer
- Patent number 7,645,486
- Issue date Jan 12, 2010
- S.O.I. Tec Silicon on Insulator Technologies
- Konstantin Bourdelle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR DEPOSITING GAP-FILLING FLUIDS AND RELATED SYSTEMS AND D...
- Publication number 20240339359
- Publication date Oct 10, 2024
- ASM IP HOLDING B.V.
- René Henricus Jozef Vervuurt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LAYER PROVIDED WITH SILICON
- Publication number 20230230833
- Publication date Jul 20, 2023
- ASM IP HOLDING B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...
- Publication number 20230223258
- Publication date Jul 13, 2023
- ASM IP Holding B.V.
- Dieter Pierreux
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES
- Publication number 20230220588
- Publication date Jul 13, 2023
- ASM IP HOLDING B.V.
- Steven Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...
- Publication number 20230223255
- Publication date Jul 13, 2023
- ASM IP HOLDING, B.V.
- Steven Van Aerde
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR FILLING A GAP
- Publication number 20230207309
- Publication date Jun 29, 2023
- ASM IP HOLDING B.V.
- Viljami PORE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A STRUCTURE WITH A HOLE
- Publication number 20230084173
- Publication date Mar 16, 2023
- ASM IP HOLDING B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LAYER PROVIDED WITH SILICON
- Publication number 20210407789
- Publication date Dec 30, 2021
- ASM IP Holding B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FILLING A GAP
- Publication number 20210313167
- Publication date Oct 7, 2021
- ASM IP HOLDING B.V.
- Viljami PORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING A SEMICONDUCTOR DEVICE WITH SILICON FILLED GAPS
- Publication number 20210151315
- Publication date May 20, 2021
- ASM IP HOLDING B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A STRUCTURE WITH A HOLE
- Publication number 20210057275
- Publication date Feb 25, 2021
- ASM IP HOLDING B.V.
- Dieter Pierreux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND METHOD
- Publication number 20190301014
- Publication date Oct 3, 2019
- ASM IP HOLDING B.V.
- Dieter Pierreux
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING SEMICONDUCTOR DEVICE BY PROVIDING AN AMORPHOUS SILICON CORE...
- Publication number 20180286679
- Publication date Oct 4, 2018
- ASM IP HOLDING B.V.
- Kelly Houben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON FILLED GAPS AND METHODS...
- Publication number 20180286672
- Publication date Oct 4, 2018
- ASM IP HOLDING B.V.
- Steven R.A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...
- Publication number 20160141176
- Publication date May 19, 2016
- ASM IP HOLDING B.V.
- Steven R.A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPOSITING FILMS ON SEMICONDUCTOR WAFERS
- Publication number 20160093487
- Publication date Mar 31, 2016
- ASM IP HOLDING B.V.
- Frank HUUSSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...
- Publication number 20160020093
- Publication date Jan 21, 2016
- ASM IP HOLDING B.V.
- Steven R.A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...
- Publication number 20160020094
- Publication date Jan 21, 2016
- ASM IP HOLDING B.V.
- Steven R.A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTION OF OXIDATION OF SUBSTRATE SURFACES IN PROCESS CHAMBERS
- Publication number 20110263134
- Publication date Oct 27, 2011
- ASM INTERNALTIONAL N.V.
- Steven R.A. Van Aerde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature doped silicon layer formation
- Publication number 20070141812
- Publication date Jun 21, 2007
- Peter Marc Zagwijn
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A SILICON DIOXIDE LAYER
- Publication number 20070134887
- Publication date Jun 14, 2007
- Konstantin Bourdelle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Steven R.A. Van Aerde

Person

Patents Grantslast 30 patents

Method for forming a structure with a hole

Method for forming a layer provided with silicon

Method and apparatus for filling a gap

Method for forming a structure with a hole

Method for providing a semiconductor device with silicon filled gaps

Substrate processing apparatus and method

Semiconductor device with amorphous silicon filled gaps and methods...

Forming semiconductor device by providing an amorphous silicon core...

Process for forming silicon-filled openings with a reduced occurren...

Method and apparatus for filling a gap

Process for forming silicon-filled openings with a reduced occurren...

Method for depositing films on semiconductor wafers

Prevention of oxidation of substrate surfaces in process chambers

Low temperature doped silicon layer formation

Method of manufacturing a silicon dioxide layer

Patents Applicationslast 30 patents

METHODS FOR DEPOSITING GAP-FILLING FLUIDS AND RELATED SYSTEMS AND D...

METHOD FOR FORMING A LAYER PROVIDED WITH SILICON

METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...

METHOD OF FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES

METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...

METHOD AND APPARATUS FOR FILLING A GAP

METHOD FOR FORMING A STRUCTURE WITH A HOLE

METHOD FOR FORMING A LAYER PROVIDED WITH SILICON

METHOD AND APPARATUS FOR FILLING A GAP

METHOD FOR PROVIDING A SEMICONDUCTOR DEVICE WITH SILICON FILLED GAPS

METHOD FOR FORMING A STRUCTURE WITH A HOLE

SUBSTRATE PROCESSING APPARATUS AND METHOD

FORMING SEMICONDUCTOR DEVICE BY PROVIDING AN AMORPHOUS SILICON CORE...

SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON FILLED GAPS AND METHODS...

PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...

METHOD FOR DEPOSITING FILMS ON SEMICONDUCTOR WAFERS

PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...

PROCESS FOR FORMING SILICON-FILLED OPENINGS WITH A REDUCED OCCURREN...

PREVENTION OF OXIDATION OF SUBSTRATE SURFACES IN PROCESS CHAMBERS

Low temperature doped silicon layer formation

METHOD OF MANUFACTURING A SILICON DIOXIDE LAYER