STUART S.P. PARKIN

Person

SANTA CLARA, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Templating layers for perpendicularly magnetized Heusler films/comp...
- Patent number 11,751,486
- Issue date Sep 5, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 11,557,721
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IrAl as a non-magnetic spacer layer for formation of synthetic anti...
- Patent number 11,538,987
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transfer torque switching of a magnetic layer with volume unia...
- Patent number 11,005,029
- Issue date May 11, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 10,957,848
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable tetragonal ferrimagnetic heusler compound with PMA and high...
- Patent number 10,937,953
- Issue date Mar 2, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for forming highly textured thin films of heusler...
- Patent number 10,651,234
- Issue date May 12, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for perpendicularly magnetized Heusler films
- Patent number 10,396,123
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- B32 - LAYERED PRODUCTS
Information Patent Grant
Oxygen-separating device utilizing ionic oxygen motion
- Patent number 10,256,490
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Naga Phani B. Aetukuri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Dissolved-oxygen sensor utilizing ionic oxygen motion
- Patent number 10,247,701
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Naga Phani B. Aetukuri
- G01 - MEASURING TESTING
Information Patent Grant
Templating layers for perpendicularly magnetized heusler films
- Patent number 10,177,305
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
MnN and Heusler layers in magnetic tunnel junctions
- Patent number 10,170,696
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices having perpendicular magnetic tunnel junction
- Patent number 9,831,422
- Issue date Nov 28, 2017
- Samsung Electronics Co., Ltd.
- Woojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 9,761,793
- Issue date Sep 12, 2017
- Samsung Electronics Co., Ltd.
- Woojin Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction switching assisted by temperature-gradient...
- Patent number 9,704,551
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Stuart S.P. Parkin
- G11 - INFORMATION STORAGE
Information Patent Grant
Termination layer-compensated tunneling magnetoresistance in ferrim...
- Patent number 9,666,215
- Issue date May 30, 2017
- International Business Machines Corporation
- Sergey V. Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling the conductivity of an oxide by applying voltage pulses...
- Patent number 9,590,176
- Issue date Mar 7, 2017
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Domain wall injector device using fringing fields aided by spin tra...
- Patent number 9,583,212
- Issue date Feb 28, 2017
- International Business Machines Corporation
- Stuart P. Parkin
- G11 - INFORMATION STORAGE
Information Patent Grant
Underlayers for textured films of Heusler compounds
- Patent number 9,406,365
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Robotic device for substrate transfer applications
- Patent number 8,936,293
- Issue date Jan 20, 2015
- International Business Machines Corporation
- Christopher O. Lada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having phase transition material incorporat...
- Patent number 8,896,035
- Issue date Nov 25, 2014
- International Business Machines Corporation
- Kota V. R. M. Murali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-current switchable magnetic memory element and method of fabri...
- Patent number 8,861,262
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switched magnetic memory element suitable for circuit...
- Patent number 8,860,105
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Domain wall motion in perpendicularly magnetized wires having artif...
- Patent number 8,687,415
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for substrate-mask alignment
- Patent number 8,673,791
- Issue date Mar 18, 2014
- International Business Machines Corporation
- David J. Altknecht
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Robotic device for substrate transfer applications
- Patent number 8,657,352
- Issue date Feb 25, 2014
- International Business Machines Corporation
- David J. Altknecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Domain wall motion in perpendicularly magnetized wires having magne...
- Patent number 8,638,601
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-current switched magnetic memory element suitable for circuit...
- Patent number 8,558,332
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION
- Publication number 20220262555
- Publication date Aug 18, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS
- Publication number 20220165469
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...
- Publication number 20220165939
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...
- Publication number 20220165938
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...
- Publication number 20210175416
- Publication date Jun 10, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...
- Publication number 20210167280
- Publication date Jun 3, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...
- Publication number 20200259076
- Publication date Aug 13, 2020
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...
- Publication number 20200243755
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...
- Publication number 20200105999
- Publication date Apr 2, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...
- Publication number 20190305040
- Publication date Oct 3, 2019
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Templating Layers For Perpendicularly Magnetized Heusler Films
- Publication number 20190035849
- Publication date Jan 31, 2019
- International Business Machines Corporation
- JAEWOO JEONG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Templating Layers For Perpendicularly Magnetized Heusler Films
- Publication number 20180205008
- Publication date Jul 19, 2018
- International Business Machines Corporation
- JAEWOO JEONG
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
OXYGEN-SEPARATING DEVICE UTILIZING IONIC OXYGEN MOTION
- Publication number 20170373335
- Publication date Dec 28, 2017
- International Business Machines Corporation
- NAGA PHANI B. AETUKURI
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Dissolved-Oxygen Sensor Utilizing Ionic Oxygen Motion
- Publication number 20170370879
- Publication date Dec 28, 2017
- International Business Machines Corporation
- Naga Phani B. Aetukuri
- G01 - MEASURING TESTING
Information Patent Application
TERMINATION LAYER-COMPENSATED TUNNELING MAGNETORESISTANCE IN FERRIM...
- Publication number 20170125045
- Publication date May 4, 2017
- International Business Machines Corporation
- SERGEY V. FALEEV
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTION
- Publication number 20170117455
- Publication date Apr 27, 2017
- Samsung Electronics Co., Ltd.
- Woojin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION SWITCHING ASSISTED BY TEMPERATURE-GRADIENT...
- Publication number 20160322091
- Publication date Nov 3, 2016
- International Business Machines Corporation
- STUART S.P. PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
UNDERLAYERS FOR TEXTURED FILMS OF HEUSLER COMPOUNDS
- Publication number 20160217842
- Publication date Jul 28, 2016
- International Business Machines Corporation
- JAEWOO JEONG
- G11 - INFORMATION STORAGE
Information Patent Application
DOMAIN WALL INJECTOR DEVICE USING FRINGING FIELDS AIDED BY SPIN TRA...
- Publication number 20160056368
- Publication date Feb 25, 2016
- International Business Machines Corporation
- STUART P. PARKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20150001655
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Jonathan Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING THE CONDUCTIVITY OF AN OXIDE BY APPLYING VOLTAGE PULSES...
- Publication number 20140266391
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING PHASE TRANSITION MATERIAL INCORPORAT...
- Publication number 20140110765
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Kota V. R. M. Murali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING ARTIF...
- Publication number 20140009994
- Publication date Jan 9, 2014
- International Business Machines Corporation
- STUART STEPHEN PAPWORTH PARKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...
- Publication number 20140008743
- Publication date Jan 9, 2014
- International Business Machines Corporation
- Jonathan Zanhong Sun
- B82 - NANO-TECHNOLOGY
Information Patent Application
DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING MAGNE...
- Publication number 20140009993
- Publication date Jan 9, 2014
- International Business Machines Corporation
- STUART STEPHEN PAPWORTH PARKIN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND APPARATUS FOR SUBSTRATE-MASK ALIGNMENT
- Publication number 20130316543
- Publication date Nov 28, 2013
- International Business Machines Corporation
- DAVID J. ALTKNECHT
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ROBOTIC DEVICE FOR SUBSTRATE TRANSFER APPLICATIONS
- Publication number 20130164113
- Publication date Jun 27, 2013
- International Business Machines Corporation
- CHRISTOPHER O. LADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Spin Shift Register Memory
- Publication number 20130005053
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Eric A. Joseph
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Spin Shift Register Memory
- Publication number 20120008362
- Publication date Jan 12, 2012
- International Business Machines Corporation
- Eric A. Joseph
- G11 - INFORMATION STORAGE
Information Patent Application
STOCHASTIC SYNAPSE MEMORY ELEMENT WITH SPIKE-TIMING DEPENDENT PLAST...
- Publication number 20100220523
- Publication date Sep 2, 2010
- International Business Machines Corporation
- Dharmendra S. Modha
- G06 - COMPUTING CALCULATING COUNTING

STUART S.P. PARKIN

Person

Patents Grantslast 30 patents

Ferrimagnetic Heusler compounds with high spin polarization

Templating layers for perpendicularly magnetized Heusler films/comp...

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Heusler compounds with non-magnetic spacer layer for formation of s...

IrAl as a non-magnetic spacer layer for formation of synthetic anti...

Spin transfer torque switching of a magnetic layer with volume unia...

Heusler compounds with non-magnetic spacer layer for formation of s...

Tunable tetragonal ferrimagnetic heusler compound with PMA and high...

Templating layers for forming highly textured thin films of heusler...

Templating layers for perpendicularly magnetized Heusler films

Oxygen-separating device utilizing ionic oxygen motion

Dissolved-oxygen sensor utilizing ionic oxygen motion

Templating layers for perpendicularly magnetized heusler films

MnN and Heusler layers in magnetic tunnel junctions

Magnetic memory devices having perpendicular magnetic tunnel junction

Magnetic memory device and method for manufacturing the same

Magnetic tunnel junction switching assisted by temperature-gradient...

Termination layer-compensated tunneling magnetoresistance in ferrim...

Controlling the conductivity of an oxide by applying voltage pulses...

Domain wall injector device using fringing fields aided by spin tra...

Underlayers for textured films of Heusler compounds

Robotic device for substrate transfer applications

Field effect transistor having phase transition material incorporat...

Spin-current switchable magnetic memory element and method of fabri...

Spin-current switched magnetic memory element suitable for circuit...

Domain wall motion in perpendicularly magnetized wires having artif...

Method and apparatus for substrate-mask alignment

Robotic device for substrate transfer applications

Domain wall motion in perpendicularly magnetized wires having magne...

Spin-current switched magnetic memory element suitable for circuit...

Patents Applicationslast 30 patents

FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION

TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS

TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...

IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...

MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...

HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...

Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...

TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...

SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...

TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...

Templating Layers For Perpendicularly Magnetized Heusler Films

Templating Layers For Perpendicularly Magnetized Heusler Films

OXYGEN-SEPARATING DEVICE UTILIZING IONIC OXYGEN MOTION

Dissolved-Oxygen Sensor Utilizing Ionic Oxygen Motion

TERMINATION LAYER-COMPENSATED TUNNELING MAGNETORESISTANCE IN FERRIM...

MAGNETIC MEMORY DEVICES HAVING PERPENDICULAR MAGNETIC TUNNEL JUNCTION

MAGNETIC TUNNEL JUNCTION SWITCHING ASSISTED BY TEMPERATURE-GRADIENT...

UNDERLAYERS FOR TEXTURED FILMS OF HEUSLER COMPOUNDS

DOMAIN WALL INJECTOR DEVICE USING FRINGING FIELDS AIDED BY SPIN TRA...

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

CONTROLLING THE CONDUCTIVITY OF AN OXIDE BY APPLYING VOLTAGE PULSES...

FIELD EFFECT TRANSISTOR HAVING PHASE TRANSITION MATERIAL INCORPORAT...

DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING ARTIF...

SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT...

DOMAIN WALL MOTION IN PERPENDICULARLY MAGNETIZED WIRES HAVING MAGNE...

METHOD AND APPARATUS FOR SUBSTRATE-MASK ALIGNMENT

ROBOTIC DEVICE FOR SUBSTRATE TRANSFER APPLICATIONS

Magnetic Spin Shift Register Memory

Magnetic Spin Shift Register Memory

STOCHASTIC SYNAPSE MEMORY ELEMENT WITH SPIKE-TIMING DEPENDENT PLAST...