Su Chen Fan

Person

Cohoes, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Area scaling for VTFET contacts
- Patent number 12,191,388
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual color via patterning
- Patent number 12,113,013
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact for VTFETs
- Patent number 12,107,147
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio shared contacts
- Patent number 11,935,929
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-resistance top contact on VTFET
- Patent number 11,908,923
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for self-aligned contact rail formation
- Patent number 11,901,440
- Issue date Feb 13, 2024
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,817,502
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor boundary protection using reversible crosslinking reflow
- Patent number 11,810,828
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked vertical transport field-effect transistor logic gate struc...
- Patent number 11,810,918
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top epitaxial layer and contact for VTFET
- Patent number 11,742,354
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout design for threshold voltage tuning
- Patent number 11,694,958
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,646,358
- Issue date May 9, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide formation for source/drain contact in a vertical transport...
- Patent number 11,621,199
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS top source/drain region doping and epitaxial growth for a vert...
- Patent number 11,615,990
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrapped-around contact for vertical field effect transistor top sou...
- Patent number 11,605,717
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reversible resistive memory logic gate device
- Patent number 11,489,111
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Sacrificial fin for contact self-alignment
- Patent number 11,316,029
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of contacts for semiconductor devices
- Patent number 11,227,801
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,222,981
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for MOL
- Patent number 11,205,590
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner and cap structures for reducing local interconnect vertical r...
- Patent number 11,205,587
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,183,593
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts and liners having multi-segmented protective caps
- Patent number 11,171,051
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Jennifer Fullam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier-free vertical interconnect structure
- Patent number 11,164,778
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide formation for source/drain contact in a vertical transport...
- Patent number 11,158,543
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line interconnect having low metal-to-metal interface res...
- Patent number 11,114,382
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alex Joseph Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for vertical field effect transistors
- Patent number 11,081,566
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contact isolation for semiconductor structures
- Patent number 11,063,126
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of metal cut
- Patent number 11,011,417
- Issue date May 18, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 10,971,490
- Issue date Apr 6, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED TRANSISTORS WITH STEPPED CONTACTS
- Publication number 20240203984
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS
- Publication number 20240178292
- Publication date May 30, 2024
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACK...
- Publication number 20240162319
- Publication date May 16, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT
- Publication number 20240128345
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240113176
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN
- Publication number 20240112985
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT
- Publication number 20240079461
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SUBSTRATE CONTACT
- Publication number 20240071811
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR CONTACTS
- Publication number 20240014135
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR LOGIC GATE STRUC...
- Publication number 20240014211
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES
- Publication number 20230420503
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR
- Publication number 20230420367
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET
- Publication number 20230411397
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW AND DEEP CONTACTS WITH STITCHING
- Publication number 20230411212
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR
- Publication number 20230411477
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS
- Publication number 20230395596
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS
- Publication number 20230317802
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT WITH SELF-ALIGNED SPACER FOR STACKED SEMICONDUCTOR D...
- Publication number 20230307447
- Publication date Sep 28, 2023
- International Business Machines Corporation
- GEN TSUTSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF NANOSHEET TRANSISTOR
- Publication number 20230282748
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...
- Publication number 20230282722
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20230268388
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT
- Publication number 20230197603
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hsueh-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION
- Publication number 20230187442
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT FOR VTFETS
- Publication number 20230187533
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES
- Publication number 20230187491
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS CELL LOCAL INTERCONNECT WITH BPR AND CBoA
- Publication number 20230170395
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...
- Publication number 20230154801
- Publication date May 18, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT FOR STACKED GAA FET
- Publication number 20230143705
- Publication date May 11, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Scaling for VTFET Contacts
- Publication number 20230145135
- Publication date May 11, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS

Su Chen Fan

Person

Patents Grantslast 30 patents

Area scaling for VTFET contacts

Dual color via patterning

Self-aligned gate contact for VTFETs

High aspect ratio shared contacts

Low-resistance top contact on VTFET

Sacrificial fin for self-aligned contact rail formation

Three-dimensional field effect device

Transistor boundary protection using reversible crosslinking reflow

Stacked vertical transport field-effect transistor logic gate struc...

Top epitaxial layer and contact for VTFET

Layout design for threshold voltage tuning

Sacrificial fin for contact self-alignment

Silicide formation for source/drain contact in a vertical transport...

CMOS top source/drain region doping and epitaxial growth for a vert...

Wrapped-around contact for vertical field effect transistor top sou...

Reversible resistive memory logic gate device

Sacrificial fin for contact self-alignment

Formation of contacts for semiconductor devices

Three-dimensional field effect device

Self-aligned contacts for MOL

Liner and cap structures for reducing local interconnect vertical r...

Three-dimensional field effect device

Contacts and liners having multi-segmented protective caps

Barrier-free vertical interconnect structure

Silicide formation for source/drain contact in a vertical transport...

Middle-of-line interconnect having low metal-to-metal interface res...

Self-aligned contacts for vertical field effect transistors

Metal contact isolation for semiconductor structures

Method and structure of metal cut

Three-dimensional field effect device

Patents Applicationslast 30 patents

STACKED TRANSISTORS WITH STEPPED CONTACTS

SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS

SPACER CUT FOR ASYMMETRIC SOURCE/DRAIN EPITAXIAL STRUCTURE IN STACK...

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

VERTICAL TRANSISTOR WITH SELF- ALIGN BACKSIDE CONTACT

STACKED FET SUBSTRATE CONTACT

STACKED FIELD EFFECT TRANSISTOR CONTACTS

STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR LOGIC GATE STRUC...

COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES

CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR

METHOD AND STRUCTURE OF FORMING SIDEWALL CONTACT FOR STACKED FET

SHALLOW AND DEEP CONTACTS WITH STITCHING

STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR

TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS

HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS

BOTTOM CONTACT WITH SELF-ALIGNED SPACER FOR STACKED SEMICONDUCTOR D...

CONTACT RESISTANCE OF NANOSHEET TRANSISTOR

CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...

STACKED FIELD-EFFECT TRANSISTORS

ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT

VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION

SELF-ALIGNED GATE CONTACT FOR VTFETS

MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES

CROSS CELL LOCAL INTERCONNECT WITH BPR AND CBoA

CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...

BOTTOM CONTACT FOR STACKED GAA FET

Area Scaling for VTFET Contacts