Sukhum Ngaoaram

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Dual ion implantation process for gate oxide improvement
- Patent number 5,714,788
- Issue date Feb 3, 1998
- Chartered Semiconductor Manufacturing, PTE Ltd.
- Sukhum Ngaoaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual ion implantation process for gate oxide improvement
- Patent number 5,605,848
- Issue date Feb 25, 1997
- Chartered Semiconductor Manufacturing Pte Ltd
- Sukhum Ngaoaram
- H01 - BASIC ELECTRIC ELEMENTS