Sunfei Fang

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned silicide bottom plate for eDRAM applications by self-d...
- Patent number 8,866,261
- Issue date Oct 21, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for device including deep trench capacitors
- Patent number 8,679,938
- Issue date Mar 25, 2014
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,629,022
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to improve threshold voltage of MOSFETs includ...
- Patent number 8,513,085
- Issue date Aug 20, 2013
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET including sloped threshold voltage adjusting materia...
- Patent number 8,445,974
- Issue date May 21, 2013
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to improve threshold voltage of MOSFETS includ...
- Patent number 8,173,531
- Issue date May 8, 2012
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 8,039,331
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned metal silicide contacts
- Patent number 8,039,382
- Issue date Oct 18, 2011
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Asymmetric semiconductor devices and method of fabricating
- Patent number 7,999,332
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Jun Yuan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming field effect transistors having stress-inducing...
- Patent number 7,923,365
- Issue date Apr 12, 2011
- Samsung Electronics Co., Ltd.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming conductive stud for semiconductive devices
- Patent number 7,863,693
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors (FETs) with multiple and/or staircase sili...
- Patent number 7,816,219
- Issue date Oct 19, 2010
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress memory technique method and related structure
- Patent number 7,785,950
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,785,999
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned metal silicide contacts
- Patent number 7,618,891
- Issue date Nov 17, 2009
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicided polysilicon spacer for enhanced contact area
- Patent number 7,598,572
- Issue date Oct 6, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-conformal stress liner for enhanced MOSFET performance
- Patent number 7,585,773
- Issue date Sep 8, 2009
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices with hybrid channel orientations, and methods for fabr...
- Patent number 7,582,516
- Issue date Sep 1, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit structures using insulator de...
- Patent number 7,541,288
- Issue date Jun 2, 2009
- Samsung Electronics Co., Ltd.
- Jun-jung Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Forming conductive stud for semiconductive devices
- Patent number 7,517,767
- Issue date Apr 14, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-silicide spacer removal
- Patent number 7,504,309
- Issue date Mar 17, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended raised source/drain structure for enhanced contact area an...
- Patent number 7,488,660
- Issue date Feb 10, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned dual segment liner and method of manufacturing the same
- Patent number 7,482,215
- Issue date Jan 27, 2009
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Opto-thermal annealing methods for forming metal gate and fully sil...
- Patent number 7,410,852
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-silicide spacer removal
- Patent number 7,393,746
- Issue date Jul 1, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure of semiconductor device
- Patent number 7,317,204
- Issue date Jan 8, 2008
- Samsung Electronics Co., Ltd.
- Min-chul Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors (FETs) with multiple and/or staircase sili...
- Patent number 7,309,901
- Issue date Dec 18, 2007
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided metal gate using dual self-aligned sil...
- Patent number 7,271,455
- Issue date Sep 18, 2007
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low resistance and reliable via in inter-level di...
- Patent number 7,223,691
- Issue date May 29, 2007
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully silicided field effect transistors
- Patent number 7,220,662
- Issue date May 22, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...
- Publication number 20140117498
- Publication date May 1, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...
- Publication number 20140120687
- Publication date May 1, 2014
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR DEVICE INCLUDING DEEP TRENCH CAPACITORS
- Publication number 20130200482
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Sunfei FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...
- Publication number 20120168874
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20120171831
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...
- Publication number 20110163385
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistors Having Gate Electrode Silicide Layers with...
- Publication number 20110156110
- Publication date Jun 30, 2011
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...
- Publication number 20110031554
- Publication date Feb 10, 2011
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Semiconductor Devices and Method of Fabricating
- Publication number 20100289085
- Publication date Nov 18, 2010
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Electrical Interconnects Using Thin Electrically...
- Publication number 20100029072
- Publication date Feb 4, 2010
- Jae-Eon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SELF-ALIGNED METAL SILICIDE CONTACTS
- Publication number 20090309228
- Publication date Dec 17, 2009
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of Forming Field Effect Transistors Having Stress-Inducing...
- Publication number 20090101979
- Publication date Apr 23, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRESS MODIFICATION BY CAPPED METAL-SEMICONDUCTOR LAYER VOL...
- Publication number 20090017586
- Publication date Jan 15, 2009
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS LINERS FOR INTEGRATED CIRCUITS
- Publication number 20090014807
- Publication date Jan 15, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Teck Jung TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE FORMATION FOR eSiGe USING SPACER OVERLAPPING eSiGe AND SIL...
- Publication number 20080246056
- Publication date Oct 9, 2008
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...
- Publication number 20080220581
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Integrated Circuit Structures Using Insulator De...
- Publication number 20080220584
- Publication date Sep 11, 2008
- Jun-jung Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING STEPPED SOURCE/DRAIN REGION
- Publication number 20080185645
- Publication date Aug 7, 2008
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP FILL FOR UNDERLAPPED DUAL STRESS LINERS
- Publication number 20080179638
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-CONFORMAL STRESS LINER FOR ENHANCED MOSFET PERFORMANCE
- Publication number 20080122003
- Publication date May 29, 2008
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES
- Publication number 20080111202
- Publication date May 15, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES
- Publication number 20080111200
- Publication date May 15, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDED POLYSILICON SPACER FOR ENHANCED CONTACT AREA
- Publication number 20080102612
- Publication date May 1, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post-silicide spacer removal
- Publication number 20080090370
- Publication date Apr 17, 2008
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pre-silicide spacer removal
- Publication number 20080090412
- Publication date Apr 17, 2008
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DUAL SEGMENT LINER AND METHOD OF MANUFACTURING THE SAME
- Publication number 20080054413
- Publication date Mar 6, 2008
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...
- Publication number 20080026551
- Publication date Jan 31, 2008
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS (FETs) WITH MULTIPLE AND/OR STAIRCASE SILI...
- Publication number 20070298572
- Publication date Dec 27, 2007
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES WITH HYBRID CHANNEL ORIENTATIONS, AND METHODS FOR FABR...
- Publication number 20070278585
- Publication date Dec 6, 2007
- International Business Machines Corporation
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming self-aligned metal silicide contacts
- Publication number 20070254479
- Publication date Nov 1, 2007
- International Business Machines Corporation
- Sunfei Fang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Sunfei Fang

Person

Patents Grantslast 30 patents

Self-aligned silicide bottom plate for eDRAM applications by self-d...

Shallow trench isolation for device including deep trench capacitors

Asymmetric FET including sloped threshold voltage adjusting materia...

Structure and method to improve threshold voltage of MOSFETs includ...

Asymmetric FET including sloped threshold voltage adjusting materia...

Structure and method to improve threshold voltage of MOSFETS includ...

Opto-thermal annealing methods for forming metal gate and fully sil...

Method for forming self-aligned metal silicide contacts

Asymmetric semiconductor devices and method of fabricating

Methods of forming field effect transistors having stress-inducing...

Forming conductive stud for semiconductive devices

Field effect transistors (FETs) with multiple and/or staircase sili...

Dual stress memory technique method and related structure

Formation of fully silicided metal gate using dual self-aligned sil...

Method for forming self-aligned metal silicide contacts

Silicided polysilicon spacer for enhanced contact area

Non-conformal stress liner for enhanced MOSFET performance

CMOS devices with hybrid channel orientations, and methods for fabr...

Methods of forming integrated circuit structures using insulator de...

Forming conductive stud for semiconductive devices

Pre-silicide spacer removal

Extended raised source/drain structure for enhanced contact area an...

Self-aligned dual segment liner and method of manufacturing the same

Opto-thermal annealing methods for forming metal gate and fully sil...

Post-silicide spacer removal

Test structure of semiconductor device

Field effect transistors (FETs) with multiple and/or staircase sili...

Formation of fully silicided metal gate using dual self-aligned sil...

Method of forming low resistance and reliable via in inter-level di...

Fully silicided field effect transistors

Patents Applicationslast 30 patents

Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...

Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-D...

SHALLOW TRENCH ISOLATION FOR DEVICE INCLUDING DEEP TRENCH CAPACITORS

STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

ASYMMETRIC FET INCLUDING SLOPED THRESHOLD VOLTAGE ADJUSTING MATERIA...

Field Effect Transistors Having Gate Electrode Silicide Layers with...

STRUCTURE AND METHOD TO IMPROVE THRESHOLD VOLTAGE OF MOSFETS INCLUD...

Asymmetric Semiconductor Devices and Method of Fabricating

Methods of Forming Electrical Interconnects Using Thin Electrically...

METHOD FOR FORMING SELF-ALIGNED METAL SILICIDE CONTACTS

Methods of Forming Field Effect Transistors Having Stress-Inducing...

CHANNEL STRESS MODIFICATION BY CAPPED METAL-SEMICONDUCTOR LAYER VOL...

DUAL STRESS LINERS FOR INTEGRATED CIRCUITS

SILICIDE FORMATION FOR eSiGe USING SPACER OVERLAPPING eSiGe AND SIL...

OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SIL...

Methods of Forming Integrated Circuit Structures Using Insulator De...

SEMICONDUCTOR STRUCTURE INCLUDING STEPPED SOURCE/DRAIN REGION

GAP FILL FOR UNDERLAPPED DUAL STRESS LINERS

NON-CONFORMAL STRESS LINER FOR ENHANCED MOSFET PERFORMANCE

FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES

FORMING CONDUCTIVE STUD FOR SEMICONDUCTIVE DEVICES

SILICIDED POLYSILICON SPACER FOR ENHANCED CONTACT AREA

Post-silicide spacer removal

Pre-silicide spacer removal

SELF-ALIGNED DUAL SEGMENT LINER AND METHOD OF MANUFACTURING THE SAME

FORMATION OF FULLY SILICIDED METAL GATE USING DUAL SELF-ALIGNED SIL...

FIELD EFFECT TRANSISTORS (FETs) WITH MULTIPLE AND/OR STAIRCASE SILI...

CMOS DEVICES WITH HYBRID CHANNEL ORIENTATIONS, AND METHODS FOR FABR...

Method for forming self-aligned metal silicide contacts