Sung Hyun Jo

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Generating physical unclonable function data from a transistor of a...
- Patent number 12,166,482
- Issue date Dec 10, 2024
- Crossbar, Inc.
- Sung Hyun Jo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reverse programmed resistive random access memory (RAM) for one tim...
- Patent number 12,020,748
- Issue date Jun 25, 2024
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,967,376
- Issue date Apr 23, 2024
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell cycling to minimize resistive memory random number correlation
- Patent number 11,923,005
- Issue date Mar 5, 2024
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function (PUF) generation involving high side...
- Patent number 11,823,739
- Issue date Nov 21, 2023
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory erase techniques and apparatus
- Patent number 11,790,999
- Issue date Oct 17, 2023
- Crossbar, Inc.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and fabrication techniques
- Patent number 11,793,093
- Issue date Oct 17, 2023
- Crossbar, Inc.
- Sung-Hyun Jo
Information Patent Grant
Selector device for two-terminal memory
- Patent number 11,776,626
- Issue date Oct 3, 2023
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function (PUF) generation involving programmi...
- Patent number 11,727,986
- Issue date Aug 15, 2023
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,450,384
- Issue date Sep 20, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,437,100
- Issue date Sep 6, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,430,517
- Issue date Aug 30, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,430,516
- Issue date Aug 30, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Distinct chip identifier sequence utilizing unclonable characterist...
- Patent number 11,423,984
- Issue date Aug 23, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 11,387,409
- Issue date Jul 12, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory program and erase techniques and app...
- Patent number 10,998,064
- Issue date May 4, 2021
- Crossbar, Inc.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector device for two-terminal memory
- Patent number 10,964,388
- Issue date Mar 30, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced diffusion in metal electrode for two-terminal memory
- Patent number 10,910,561
- Issue date Feb 2, 2021
- Crossbar, Inc.
- Steven Patrick Maxwell
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-stoichiometric resistive switching memory device and fabricatio...
- Patent number 10,840,442
- Issue date Nov 17, 2020
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regulating interface layer formation for two-terminal memory
- Patent number 10,693,062
- Issue date Jun 23, 2020
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell utilizing volatile switching two terminal...
- Patent number 10,658,033
- Issue date May 19, 2020
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell with intrinsic current control
- Patent number 10,608,180
- Issue date Mar 31, 2020
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching block configuration bit comprising a non-volatile memory...
- Patent number 10,541,025
- Issue date Jan 21, 2020
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Neuromorphic logic for an array of high on/off ratio non-volatile m...
- Patent number 10,489,700
- Issue date Nov 26, 2019
- Crossbar, Inc.
- Mehdi Asnaashari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 10,483,462
- Issue date Nov 19, 2019
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Read operation with data latch and signal termination for 1TNR memo...
- Patent number 10,475,511
- Issue date Nov 12, 2019
- Crossbar, Inc.
- Lin Shih Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Device switching using layered device structure
- Patent number 10,224,370
- Issue date Mar 5, 2019
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage tuning for a volatile selection device
- Patent number 10,211,397
- Issue date Feb 19, 2019
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell utilizing volatile switching two terminal...
- Patent number 10,210,929
- Issue date Feb 19, 2019
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal memory electrode comprising a non-continuous contact s...
- Patent number 10,134,984
- Issue date Nov 20, 2018
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ERASE ALGORITHM WITH A WEAK PROGRAM PULSE FOR NON-VOLATILE MEMORY
- Publication number 20240304243
- Publication date Sep 12, 2024
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATING PHYSICAL UNCLONABLE FUNCTION DATA FROM A TRANSISTOR OF A...
- Publication number 20240113715
- Publication date Apr 4, 2024
- Crossbar, Inc.
- Sung Hyun JO
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
REVERSE PROGRAMMED RESISTIVE RANDOM ACCESS MEMORY (RAM) FOR ONE TIM...
- Publication number 20230317157
- Publication date Oct 5, 2023
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Application
CELL CYCLING TO MINIMIZE RESISTIVE MEMORY RANDOM NUMBER CORRELATION
- Publication number 20230307044
- Publication date Sep 28, 2023
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Application
NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...
- Publication number 20230157186
- Publication date May 18, 2023
- Crossbar, Inc.
- Sung Hyun JO
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20230005538
- Publication date Jan 5, 2023
- CROSSBAR, INC.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION (PUF) GENERATION INVOLVING PROGRAMMI...
- Publication number 20220051718
- Publication date Feb 17, 2022
- Crossbar Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION (PUF) GENERATION INVOLVING HIGH SIDE...
- Publication number 20220036949
- Publication date Feb 3, 2022
- Crossbar Inc.
- Mehdi Asnaashari
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210312984
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210312985
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY ERASE TECHNIQUES AND APPARATUS
- Publication number 20210312995
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210312983
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210312986
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...
- Publication number 20210314177
- Publication date Oct 7, 2021
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR DEVICE FOR TWO-TERMINAL MEMORY
- Publication number 20210280246
- Publication date Sep 9, 2021
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...
- Publication number 20210066584
- Publication date Mar 4, 2021
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES
- Publication number 20200259081
- Publication date Aug 13, 2020
- Crossbar, Inc.
- Sung-Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY CELL UTILIZING VOLATILE SWITCHING TWO TERMINAL...
- Publication number 20200051630
- Publication date Feb 13, 2020
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY PROGRAM AND ERASE TECHNIQUES AND APP...
- Publication number 20190272882
- Publication date Sep 5, 2019
- Crossbar, Inc.
- Jeremy Guy
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTOR DEVICE FOR TWO-TERMINAL MEMORY
- Publication number 20190122732
- Publication date Apr 25, 2019
- Crossbar, Inc.
- Sung Hyun JO
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...
- Publication number 20190027219
- Publication date Jan 24, 2019
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL
- Publication number 20180062075
- Publication date Mar 1, 2018
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SENSING A NON-VOLATILE MEMORY DEVICE UTILIZING SELECTOR DEVICE HOLD...
- Publication number 20170229169
- Publication date Aug 10, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE SWITCHING USING LAYERED DEVICE STRUCTURE
- Publication number 20170179195
- Publication date Jun 22, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Application
REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORY
- Publication number 20170162783
- Publication date Jun 8, 2017
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...
- Publication number 20160343937
- Publication date Nov 24, 2016
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY SELECTOR-BASED NON VOLATILE MEMORY CELL AND FABRICATION
- Publication number 20160268341
- Publication date Sep 15, 2016
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS
- Publication number 20160233422
- Publication date Aug 11, 2016
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL
- Publication number 20160225824
- Publication date Aug 4, 2016
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR-BASED NON-VOLATILE CELL FABRICATION UTILIZING IC-FOUNDRY C...
- Publication number 20160190208
- Publication date Jun 30, 2016
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS

Sung Hyun Jo

Person

Patents Grantslast 30 patents

Generating physical unclonable function data from a transistor of a...

Reverse programmed resistive random access memory (RAM) for one tim...

Distinct chip identifier sequence utilizing unclonable characterist...

Cell cycling to minimize resistive memory random number correlation

Physically unclonable function (PUF) generation involving high side...

Resistive random access memory erase techniques and apparatus

Resistive random access memory and fabrication techniques

Selector device for two-terminal memory

Physically unclonable function (PUF) generation involving programmi...

Distinct chip identifier sequence utilizing unclonable characterist...

Distinct chip identifier sequence utilizing unclonable characterist...

Distinct chip identifier sequence utilizing unclonable characterist...

Distinct chip identifier sequence utilizing unclonable characterist...

Distinct chip identifier sequence utilizing unclonable characterist...

Formation of structurally robust nanoscale Ag-based conductive stru...

Resistive random access memory program and erase techniques and app...

Selector device for two-terminal memory

Reduced diffusion in metal electrode for two-terminal memory

Non-stoichiometric resistive switching memory device and fabricatio...

Regulating interface layer formation for two-terminal memory

Non-volatile memory cell utilizing volatile switching two terminal...

Resistive memory cell with intrinsic current control

Switching block configuration bit comprising a non-volatile memory...

Neuromorphic logic for an array of high on/off ratio non-volatile m...

Formation of structurally robust nanoscale Ag-based conductive stru...

Read operation with data latch and signal termination for 1TNR memo...

Device switching using layered device structure

Threshold voltage tuning for a volatile selection device

Non-volatile memory cell utilizing volatile switching two terminal...

Two-terminal memory electrode comprising a non-continuous contact s...

Patents Applicationslast 30 patents

ERASE ALGORITHM WITH A WEAK PROGRAM PULSE FOR NON-VOLATILE MEMORY

GENERATING PHYSICAL UNCLONABLE FUNCTION DATA FROM A TRANSISTOR OF A...

REVERSE PROGRAMMED RESISTIVE RANDOM ACCESS MEMORY (RAM) FOR ONE TIM...

CELL CYCLING TO MINIMIZE RESISTIVE MEMORY RANDOM NUMBER CORRELATION

NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

PHYSICALLY UNCLONABLE FUNCTION (PUF) GENERATION INVOLVING PROGRAMMI...

PHYSICALLY UNCLONABLE FUNCTION (PUF) GENERATION INVOLVING HIGH SIDE...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

RESISTIVE RANDOM ACCESS MEMORY ERASE TECHNIQUES AND APPARATUS

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

DISTINCT CHIP IDENTIFIER SEQUENCE UTILIZING UNCLONABLE CHARACTERIST...

SELECTOR DEVICE FOR TWO-TERMINAL MEMORY

NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...

RESISTIVE RANDOM ACCESS MEMORY AND FABRICATION TECHNIQUES

NON-VOLATILE MEMORY CELL UTILIZING VOLATILE SWITCHING TWO TERMINAL...

RESISTIVE RANDOM ACCESS MEMORY PROGRAM AND ERASE TECHNIQUES AND APP...

SELECTOR DEVICE FOR TWO-TERMINAL MEMORY

SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...

RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL

SENSING A NON-VOLATILE MEMORY DEVICE UTILIZING SELECTOR DEVICE HOLD...

DEVICE SWITCHING USING LAYERED DEVICE STRUCTURE

REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORY

NON-STOICHIOMETRIC RESISTIVE SWITCHING MEMORY DEVICE AND FABRICATIO...

HIGH DENSITY SELECTOR-BASED NON VOLATILE MEMORY CELL AND FABRICATION

NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS

RESISTIVE MEMORY CELL WITH INTRINSIC CURRENT CONTROL

SELECTOR-BASED NON-VOLATILE CELL FABRICATION UTILIZING IC-FOUNDRY C...