Sung-Shan Tai

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Hsinchu City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a self-aligned contact opening in MOSFET
- Patent number 8,643,094
- Issue date Feb 4, 2014
- Sinopower Semiconductor, Inc.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming a self-aligned contact opening in MOSFET
- Publication number 20130049104
- Publication date Feb 28, 2013
- SINOPOWER SEMICONDUCTOR, INC
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AR...
- Publication number 20130001699
- Publication date Jan 3, 2013
- SINOPOWER SEMICONDUCTOR, INC.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS