Sung-Yong Chung

Person

Davis, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,950,412
- Issue date Apr 2, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,251,189
- Issue date Feb 15, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 10,297,606
- Issue date May 21, 2019
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 9,570,458
- Issue date Feb 14, 2017
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage reducing writeline charge protection circuit
- Patent number 9,196,624
- Issue date Nov 24, 2015
- Cypress Semiconductor Corporation
- Bradley Marc Davis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adaptive double pulse BCF programming
- Patent number 8,885,418
- Issue date Nov 11, 2014
- SanDisk Technologies, Inc
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 8,692,310
- Issue date Apr 8, 2014
- Spansion LLC
- YouSeok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 8,559,255
- Issue date Oct 15, 2013
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 8,264,898
- Issue date Sep 11, 2012
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Applying negative gate voltage to wordlines adjacent to wordline as...
- Patent number 7,995,386
- Issue date Aug 9, 2011
- Spansion LLC
- Yuji Mizuguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 7,986,562
- Issue date Jul 26, 2011
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective application of word line bias to minimize fringe effects...
- Patent number 7,952,938
- Issue date May 31, 2011
- Spansion LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming in memory devices using source bitline voltage bias
- Patent number 7,746,698
- Issue date Jun 29, 2010
- Spansion LLC
- Zhizheng Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective application of word line bias to minimize fringe effects...
- Patent number 7,746,705
- Issue date Jun 29, 2010
- Spansion LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling AC disturbance while programming
- Patent number 7,679,967
- Issue date Mar 16, 2010
- Spansion LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Work function engineering for FN erase of a memory device with mult...
- Patent number 7,659,569
- Issue date Feb 9, 2010
- Spansion LLC
- Wei Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-phase wordline erasing for flash memory
- Patent number 7,626,869
- Issue date Dec 1, 2009
- Spansion LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20220173116
- Publication date Jun 2, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20190319035
- Publication date Oct 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20170170187
- Publication date Jun 15, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20140159138
- Publication date Jun 12, 2014
- SPANSION LLC
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leakage Reducing Writeline Charge Protection Circuit
- Publication number 20140015138
- Publication date Jan 16, 2014
- SPANSION LLC
- Bradley Marc DAVIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20120294103
- Publication date Nov 22, 2012
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20110235412
- Publication date Sep 29, 2011
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE APPLICATION OF WORD LINE BIAS TO MINIMIZE FRINGE EFFECTS...
- Publication number 20100208527
- Publication date Aug 19, 2010
- SPANSION LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20100200904
- Publication date Aug 12, 2010
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPLYING NEGATIVE GATE VOLTAGE TO WORDLINES ADJACENT TO WORDLINE AS...
- Publication number 20100128521
- Publication date May 27, 2010
- SPANSION LLC
- Yuji Mizuguchi
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20100103732
- Publication date Apr 29, 2010
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING AC DISTURBANCE WHILE PROGRAMMING
- Publication number 20090161462
- Publication date Jun 25, 2009
- SPANSION LLC
- Sung-Yong Chung
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING IN MEMORY DEVICES USING SOURCE BITLINE VOLTAGE BIAS
- Publication number 20090154246
- Publication date Jun 18, 2009
- SPANSION LLC
- Zhizheng Liu
- G11 - INFORMATION STORAGE
Information Patent Application
WORK FUNCTION ENGINEERING FOR FN ERAS OF A MEMORY DEVICE WITH MULTI...
- Publication number 20090146201
- Publication date Jun 11, 2009
- SPANSION LLC
- Wei Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Selective Application Of Word Line Bias To Minimize Fringe Effects...
- Publication number 20090147589
- Publication date Jun 11, 2009
- SPANSION LLC
- Gulzar Ahmed Kathawala
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-PHASE WORDLINE ERASING FOR FLASH MEMORY
- Publication number 20080279014
- Publication date Nov 13, 2008
- SPANSION LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE

Sung-Yong Chung

Person

Patents Grantslast 30 patents

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

Leakage reducing writeline charge protection circuit

Adaptive double pulse BCF programming

Gate fringing effect based channel formation for semiconductor device

Controlling AC disturbance while programming

Controlling AC disturbance while programming

Applying negative gate voltage to wordlines adjacent to wordline as...

Controlling AC disturbance while programming

Selective application of word line bias to minimize fringe effects...

Programming in memory devices using source bitline voltage bias

Selective application of word line bias to minimize fringe effects...

Controlling AC disturbance while programming

Work function engineering for FN erase of a memory device with mult...

Multi-phase wordline erasing for flash memory

Patents Applicationslast 30 patents

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

Leakage Reducing Writeline Charge Protection Circuit

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

SELECTIVE APPLICATION OF WORD LINE BIAS TO MINIMIZE FRINGE EFFECTS...

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

APPLYING NEGATIVE GATE VOLTAGE TO WORDLINES ADJACENT TO WORDLINE AS...

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

CONTROLLING AC DISTURBANCE WHILE PROGRAMMING

PROGRAMMING IN MEMORY DEVICES USING SOURCE BITLINE VOLTAGE BIAS

WORK FUNCTION ENGINEERING FOR FN ERAS OF A MEMORY DEVICE WITH MULTI...

Selective Application Of Word Line Bias To Minimize Fringe Effects...

MULTI-PHASE WORDLINE ERASING FOR FLASH MEMORY