Sungkee HAN

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Seongnam-si, KR

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having selectively nitrided gate insulating la...
- Patent number 8,772,115
- Issue date Jul 8, 2014
- Samsung Electronics Co., Ltd.
- HyeokJun Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function metal gate structure and related method of manuf...
- Patent number 7,745,887
- Issue date Jun 29, 2010
- Samsung Electronics Co., Ltd.
- Min-Joo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function metal gate structure and related method of manuf...
- Patent number 7,514,310
- Issue date Apr 7, 2009
- Samsung Electronics Co., Ltd.
- Min-Joo Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING SELECTIVELY NITRIDED GATE INSULATING LA...
- Publication number 20130316525
- Publication date Nov 28, 2013
- Samsung Electronics Co., Ltd.
- HyeokJun Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATE...
- Publication number 20130082332
- Publication date Apr 4, 2013
- Samsung Electronics Co., Ltd.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WORK FUNCTION METAL GATE STRUCTURE AND RELATED METHOD OF MANUF...
- Publication number 20080017930
- Publication date Jan 24, 2008
- Samsung Electronics Co., Ltd.
- Min-Joo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual work function metal gate structure and related method of manuf...
- Publication number 20060115940
- Publication date Jun 1, 2006
- Min-Joo Kim
- H01 - BASIC ELECTRIC ELEMENTS