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Susumu Murakami
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Katsuta-shi, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor composite sensor
Patent number
6,211,772
Issue date
Apr 3, 2001
Hitachi, Ltd.
Susumu Murakami
G01 - MEASURING TESTING
Information
Patent Grant
Overvoltage self-protection semiconductor device, method of fabrica...
Patent number
5,627,387
Issue date
May 6, 1997
Hitachi, Ltd.
Susumu Murakami
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having a semi-insulating layer
Patent number
5,552,625
Issue date
Sep 3, 1996
Hitachi, Ltd.
Susumu Murakami
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor sensor for detecting physical amount without thermal...
Patent number
5,537,882
Issue date
Jul 23, 1996
Seiichi Ugai
G01 - MEASURING TESTING
Information
Patent Grant
Gate turn-off thyristor and power convertor using the same
Patent number
5,459,338
Issue date
Oct 17, 1995
Hitachi, Ltd.
Yuji Takayanagi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Constant-voltage diode for over-voltage protection
Patent number
5,430,311
Issue date
Jul 4, 1995
Hitachi, Ltd.
Susumu Murakami
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electrostatic type micro transducer and control system using the same
Patent number
5,367,429
Issue date
Nov 22, 1994
Hitachi, Ltd.
Shigeki Tsuchitani
B81 - MICRO-STRUCTURAL TECHNOLOGY
Information
Patent Grant
Turn off type semiconductor device, method of producing the same an...
Patent number
5,324,967
Issue date
Jun 28, 1994
Hitachi, Ltd.
Hideo Honma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor rectifying diode with PN geometry
Patent number
5,256,889
Issue date
Oct 26, 1993
Hitachi, Ltd.
Hiroshi Kozaka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of transmitting pulse signal and apparatus therefor
Patent number
5,097,160
Issue date
Mar 17, 1992
Hitachi, Ltd.
Shigeyuki Kawahata
H03 - BASIC ELECTRONIC CIRCUITRY
Information
Patent Grant
Semiconductor rectifying diode with pn geometry
Patent number
5,081,509
Issue date
Jan 14, 1992
Hitachi, Ltd.
Hiroshi Kozaka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having high breakdown voltage
Patent number
4,691,223
Issue date
Sep 1, 1987
Hitachi, Ltd.
Susumu Murakami
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field controlled thyristor with double-diffused source region
Patent number
4,514,747
Issue date
Apr 30, 1985
Hitachi, Ltd.
Kenji Miyata
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field controlled thyristor control circuit with additional FCT in r...
Patent number
4,354,121
Issue date
Oct 12, 1982
Hitachi, Ltd.
Yoshio Terasawa
H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information
Patent Grant
Method for manufacturing a semiconductor device utilizing selective...
Patent number
4,329,772
Issue date
May 18, 1982
Hitachi, Ltd.
Saburo Oikawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Photo-coupled semiconductor device
Patent number
4,136,351
Issue date
Jan 23, 1979
Hitachi, Ltd.
Yoshitaka Sugawara
H01 - BASIC ELECTRIC ELEMENTS