Swaroop Kaza

Person

Woburn, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Scheme to reduce read disturb for high read intensive blocks in non...
- Patent number 10,734,084
- Issue date Aug 4, 2020
- Western Digital Technologies, Inc.
- Narayan Kuddannavar
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced erase retry of non-volatile storage device
- Patent number 10,643,710
- Issue date May 5, 2020
- Western Digital Technologies, Inc.
- Divya Prasad
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Modified local segmented self-boosting of memory cell channels
- Patent number 9,449,690
- Issue date Sep 20, 2016
- Cypress Semiconductor Corporation
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insualtor-metal (MIM) device and method of formation thereof
- Patent number 9,012,299
- Issue date Apr 21, 2015
- Spansion LLC
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) device and method of formation thereof
- Patent number 8,828,837
- Issue date Sep 9, 2014
- Spansion LLC
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of programming, erasing and repairing a memory device
- Patent number 8,482,959
- Issue date Jul 9, 2013
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insulator-metal (MIM) device and method of formation thereof
- Patent number 8,445,913
- Issue date May 21, 2013
- Spansion LLC
- Steven Avanzino
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of programming, erasing and repairing a memory device
- Patent number 8,077,495
- Issue date Dec 13, 2011
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing a resistive memory device
- Patent number 7,916,523
- Issue date Mar 29, 2011
- Spansion LLC
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Prevention of oxidation of carrier ions to improve memory retention...
- Patent number 7,902,086
- Issue date Mar 8, 2011
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase, programming and leakage characteristics of a resistive memor...
- Patent number 7,706,168
- Issue date Apr 27, 2010
- Spansion LLC
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of selecting operating characteristics of a resistive memory...
- Patent number 7,646,624
- Issue date Jan 12, 2010
- Spansion LLC
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable breakdown characteristic diode
- Patent number 7,579,631
- Issue date Aug 25, 2009
- Spansion LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming memory device
- Patent number 7,564,708
- Issue date Jul 21, 2009
- Spansion LLC
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Grant
Use of periodic refresh in medium retention memory arrays
- Patent number 7,474,579
- Issue date Jan 6, 2009
- Spansion LLC
- Colin S. Bill
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilization of memory-diode which may have each of a plurality of d...
- Patent number 7,450,416
- Issue date Nov 11, 2008
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element using active layer of blended materials
- Patent number 7,378,682
- Issue date May 27, 2008
- Spanson LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming, reading and erasing memory-diode in a memory...
- Patent number 7,379,317
- Issue date May 27, 2008
- Spansion LLC
- Colin S. Bill
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming, erasing and reading memory cells in a resist...
- Patent number 7,355,886
- Issue date Apr 8, 2008
- Spansion LLC
- Wei Daisy Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a memory device
- Patent number 7,269,050
- Issue date Sep 11, 2007
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with nitrogen-containing active layer
- Patent number 7,208,757
- Issue date Apr 24, 2007
- Spansion LLC
- Richard Kingsborough
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory elements using organic active layer
- Patent number 7,102,156
- Issue date Sep 5, 2006
- Spansion LLC Advanced Micro Devices, Inc
- Richard Kingsborough
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SCHEME TO REDUCE READ DISTURB FOR HIGH READ INTENSIVE BLOCKS IN NON...
- Publication number 20190371416
- Publication date Dec 5, 2019
- Western Digital Technologies, Inc.
- Narayan Kuddannavar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED ERASE RETRY OF NON-VOLATILE STORAGE DEVICE
- Publication number 20190164614
- Publication date May 30, 2019
- Western Digital Technologies, Inc.
- DIVYA PRASAD
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METAL-INSUALTOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREROF
- Publication number 20140357044
- Publication date Dec 4, 2014
- Steven AVANZINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED LOCAL SEGMENTED SELF-BOOSTING OF MEMORY CELL CHANNELS
- Publication number 20140301146
- Publication date Oct 9, 2014
- SPANSION LLC
- Swaroop KAZA
- G11 - INFORMATION STORAGE
Information Patent Application
METAL-INSULATOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREOF
- Publication number 20130237030
- Publication date Sep 12, 2013
- SPANSION LLC
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROGRAMMING, ERASING AND REPAIRING A MEMORY DEVICE
- Publication number 20120081983
- Publication date Apr 5, 2012
- Swaroop KAZA
- G11 - INFORMATION STORAGE
Information Patent Application
Erase, programming and leakage characteristics of a resistive memor...
- Publication number 20090109727
- Publication date Apr 30, 2009
- Spansion LLC
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Application
Metal-insulator-metal (MIM) device and method of formation thereof
- Publication number 20090109598
- Publication date Apr 30, 2009
- Spansion LLC
- Steven Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF PERIODIC REFRESH IN MEDIUM RETENTION MEMORY ARRAYS
- Publication number 20080151669
- Publication date Jun 26, 2008
- SPANSION LLC
- Colin S. Bill
- G11 - INFORMATION STORAGE
Information Patent Application
PREVENTION OF OXIDATION OF CARRIER IONS TO IMPROVE MEMORY RETENTION...
- Publication number 20080135834
- Publication date Jun 12, 2008
- SPANSION LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Application
Method of programming, erasing and repairing a memory device
- Publication number 20080133818
- Publication date Jun 5, 2008
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Application
Method of programming memory device
- Publication number 20080130357
- Publication date Jun 5, 2008
- Spansion LLC
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Application
Method of erasing a resistive memory device
- Publication number 20080130392
- Publication date Jun 5, 2008
- Spansion LLC
- An Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method of selecting operating characteristics of a resistive memory...
- Publication number 20080112206
- Publication date May 15, 2008
- Tzu-Ning Fang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device with improved data retention
- Publication number 20070007585
- Publication date Jan 11, 2007
- Spansion LLC
- Igor Sokolik
- G11 - INFORMATION STORAGE
Information Patent Application
Method of programming a memory device
- Publication number 20060274567
- Publication date Dec 7, 2006
- Spansion LLC
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Application
Variable breakdown characteristic diode
- Publication number 20060214183
- Publication date Sep 28, 2006
- Spansion LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Application
Memory element using active layer of blended materials
- Publication number 20060175646
- Publication date Aug 10, 2006
- Spansion LLC
- David Gaun
- G11 - INFORMATION STORAGE
Information Patent Application
Method of programming, reading and erasing memory-diode in a memory...
- Publication number 20060139994
- Publication date Jun 29, 2006
- Colin S. Bill
- G11 - INFORMATION STORAGE

Swaroop Kaza

Person

Patents Grantslast 30 patents

Scheme to reduce read disturb for high read intensive blocks in non...

Enhanced erase retry of non-volatile storage device

Modified local segmented self-boosting of memory cell channels

Metal-insualtor-metal (MIM) device and method of formation thereof

Metal-insulator-metal (MIM) device and method of formation thereof

Method of programming, erasing and repairing a memory device

Metal-insulator-metal (MIM) device and method of formation thereof

Method of programming, erasing and repairing a memory device

Method of erasing a resistive memory device

Prevention of oxidation of carrier ions to improve memory retention...

Erase, programming and leakage characteristics of a resistive memor...

Method of selecting operating characteristics of a resistive memory...

Variable breakdown characteristic diode

Method of programming memory device

Use of periodic refresh in medium retention memory arrays

Utilization of memory-diode which may have each of a plurality of d...

Memory element using active layer of blended materials

Method of programming, reading and erasing memory-diode in a memory...

Method of programming, erasing and reading memory cells in a resist...

Method of programming a memory device

Memory element with nitrogen-containing active layer

Memory elements using organic active layer

Patents Applicationslast 30 patents

SCHEME TO REDUCE READ DISTURB FOR HIGH READ INTENSIVE BLOCKS IN NON...

ENHANCED ERASE RETRY OF NON-VOLATILE STORAGE DEVICE

METAL-INSUALTOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREROF

MODIFIED LOCAL SEGMENTED SELF-BOOSTING OF MEMORY CELL CHANNELS

METAL-INSULATOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREOF

METHOD OF PROGRAMMING, ERASING AND REPAIRING A MEMORY DEVICE

Erase, programming and leakage characteristics of a resistive memor...

Metal-insulator-metal (MIM) device and method of formation thereof

USE OF PERIODIC REFRESH IN MEDIUM RETENTION MEMORY ARRAYS

PREVENTION OF OXIDATION OF CARRIER IONS TO IMPROVE MEMORY RETENTION...

Method of programming, erasing and repairing a memory device

Method of programming memory device

Method of erasing a resistive memory device

Method of selecting operating characteristics of a resistive memory...

Memory device with improved data retention

Method of programming a memory device

Variable breakdown characteristic diode

Memory element using active layer of blended materials

Method of programming, reading and erasing memory-diode in a memory...