Tadaaki Kaneko

Person

Sanda-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate manufacturing method, silicon carbide sub...
- Patent number 12,255,073
- Issue date Mar 18, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC semiconductor substrate, and, production method therefor and pr...
- Patent number 12,237,377
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC substrate
- Patent number 12,237,378
- Issue date Feb 25, 2025
- Kwansei Gakuin Educational Foundation
- Masatake Nagaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor substrate and epitaxial growt...
- Patent number 12,209,328
- Issue date Jan 28, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature distribution evaluation method, temperature distributio...
- Patent number 12,131,960
- Issue date Oct 29, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for manufacturing semiconductor substrate comprising tempera...
- Patent number 12,014,939
- Issue date Jun 18, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC substrate manufacturing method and manufacturing device, and me...
- Patent number 11,972,949
- Issue date Apr 30, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing etched SiC substrate and grown SiC substra...
- Patent number 11,952,678
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC substrate provided with graphene precursor...
- Patent number 11,365,491
- Issue date Jun 21, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapour-phase epitaxial growth method, and method for producing subs...
- Patent number 11,359,307
- Issue date Jun 14, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon-carbide semiconductor element
- Patent number 11,081,347
- Issue date Aug 3, 2021
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reference sample with inclined support base, method for evaluating...
- Patent number 10,847,342
- Issue date Nov 24, 2020
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- G01 - MEASURING TESTING
Information Patent Grant
Reference sample with inclined support base, method for evaluating...
- Patent number 10,699,873
- Issue date Jun 30, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment method for SiC substrate
- Patent number 10,665,465
- Issue date May 26, 2020
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor wafer
- Patent number 10,508,361
- Issue date Dec 17, 2019
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Etching method for SiC substrate and holding container
- Patent number 10,388,536
- Issue date Aug 20, 2019
- Toyo Tanso Co., Ltd.
- Satoshi Torimi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nanometer standard prototype and method for manufacturing nanometer...
- Patent number 10,012,675
- Issue date Jul 3, 2018
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for treating the surface of a silicon-carbide substrate incl...
- Patent number 9,978,597
- Issue date May 22, 2018
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon-carbide semiconductor element
- Patent number 9,941,116
- Issue date Apr 10, 2018
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer manufacturing method, and semiconductor wafer
- Patent number 9,029,219
- Issue date May 12, 2015
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tantalum carbide, method for producing tantalum carbide, tantalum c...
- Patent number 8,211,244
- Issue date Jul 3, 2012
- Toyo Tanso Co., Ltd.
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of mask forming and method of three-dimensional microfabrica...
- Patent number 8,110,322
- Issue date Feb 7, 2012
- Riber
- Naokatsu Sano
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Electron beam microprocessing method
- Patent number 7,704,861
- Issue date Apr 27, 2010
- Riber SA
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing single crystal silicon carbide
- Patent number 7,637,998
- Issue date Dec 29, 2009
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...
- Publication number 20250051962
- Publication date Feb 13, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...
- Publication number 20240404827
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR
- Publication number 20240328776
- Publication date Oct 3, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR EVALUATING WORK-MODIFIED LAYER, AND METHOD OF MANUFACTUR...
- Publication number 20240241064
- Publication date Jul 18, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR EVALUATING WORK-AFFECTED LAYER
- Publication number 20240068958
- Publication date Feb 29, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...
- Publication number 20240020814
- Publication date Jan 18, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES
- Publication number 20230411225
- Publication date Dec 21, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE S...
- Publication number 20230392282
- Publication date Dec 7, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...
- Publication number 20230304186
- Publication date Sep 28, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE S...
- Publication number 20230212785
- Publication date Jul 6, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...
- Publication number 20230203704
- Publication date Jun 29, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE S...
- Publication number 20230197486
- Publication date Jun 22, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...
- Publication number 20230193507
- Publication date Jun 22, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, SILICON CARBIDE SUB...
- Publication number 20230197456
- Publication date Jun 22, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...
- Publication number 20230166972
- Publication date Jun 1, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...
- Publication number 20230160100
- Publication date May 25, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...
- Publication number 20230024750
- Publication date Jan 26, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SIC SEMICONDUCTOR DEVICE AND SIC SEMICONDUC...
- Publication number 20220375749
- Publication date Nov 24, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SUBSTRATE, SIC SUBSTRATE PRODUCTION METHOD, SIC SEMICONDUCTOR D...
- Publication number 20220359667
- Publication date Nov 10, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SIC SUBSTRATE
- Publication number 20220344152
- Publication date Oct 27, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...
- Publication number 20220333270
- Publication date Oct 20, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUC...
- Publication number 20220316089
- Publication date Oct 6, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SUBSTRATE PRODUCTION METHOD
- Publication number 20220290324
- Publication date Sep 15, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION ME...
- Publication number 20220282395
- Publication date Sep 8, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SiC SUBSTRATE
- Publication number 20220285502
- Publication date Sep 8, 2022
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20220259760
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTAINER MADE OF SIC
- Publication number 20220259759
- Publication date Aug 18, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, MANUFACTURING APPA...
- Publication number 20220220633
- Publication date Jul 14, 2022
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH

Tadaaki Kaneko

Person

Patents Grantslast 30 patents

Silicon carbide substrate manufacturing method, silicon carbide sub...

Method for producing a SiC seed crystal for growth of a SiC ingot b...

SiC semiconductor substrate, and, production method therefor and pr...

Method for manufacturing SiC substrate

Method of manufacturing semiconductor substrate and epitaxial growt...

Temperature distribution evaluation method, temperature distributio...

Method for producing a SiC substrate via an etching step, growth st...

Method for manufacturing a SiC substrate by simultaneously forming...

SiC semiconductor substrate, method for manufacturing same, and dev...

Device for manufacturing semiconductor substrate comprising tempera...

SiC substrate manufacturing method and manufacturing device, and me...

Method for manufacturing etched SiC substrate and grown SiC substra...

Semiconductor substrate manufacturing device applicable to large-di...

SiC single crystal manufacturing method, SiC single crystal manufac...

Method for producing SiC substrate provided with graphene precursor...

Vapour-phase epitaxial growth method, and method for producing subs...

Method for manufacturing silicon-carbide semiconductor element

Reference sample with inclined support base, method for evaluating...

Reference sample with inclined support base, method for evaluating...

Surface treatment method for SiC substrate

Method for manufacturing semiconductor wafer

Etching method for SiC substrate and holding container

Nanometer standard prototype and method for manufacturing nanometer...

Method for treating the surface of a silicon-carbide substrate incl...

Method for manufacturing silicon-carbide semiconductor element

Semiconductor wafer manufacturing method, and semiconductor wafer

Tantalum carbide, method for producing tantalum carbide, tantalum c...

Method of mask forming and method of three-dimensional microfabrica...

Electron beam microprocessing method

Method for producing single crystal silicon carbide

Patents Applicationslast 30 patents

METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTU...

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

METHOD FOR IMPROVING DOPANT ACTIVATION RATE AND STRUCTURE CREATED B...

METHOD FOR MEASURING ETCHING AMOUNT, AND MEASUREMENT SYSTEM THEREFOR

METHOD FOR EVALUATING WORK-MODIFIED LAYER, AND METHOD OF MANUFACTUR...

METHOD AND SYSTEM FOR EVALUATING WORK-AFFECTED LAYER

METHOD OF USING SIC CONTAINER

HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...

EVALUATION METHOD FOR SILICON CARBIDE SUBSTRATES

METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE S...

METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...

ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE S...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...

METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE S...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...

SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD, SILICON CARBIDE SUB...

MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MOD...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUB...

SIC SINGLE CRYSTAL MANUFACTURING METHOD, SIC SINGLE CRYSTAL MANUFAC...

METHOD OF MANUFACTURING SIC SEMICONDUCTOR DEVICE AND SIC SEMICONDUC...

SIC SUBSTRATE, SIC SUBSTRATE PRODUCTION METHOD, SIC SEMICONDUCTOR D...

METHOD FOR MANUFACTURING SIC SUBSTRATE

SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUC...

SiC SUBSTRATE PRODUCTION METHOD

SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION ME...

METHOD FOR MANUFACTURING SiC SUBSTRATE

MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE

CONTAINER MADE OF SIC

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, MANUFACTURING APPA...