Tadami Tanaka

Person

Kishima-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon wafer, SOI substrate, method for growing silicon single cry...
- Patent number 7,704,318
- Issue date Apr 27, 2010
- Sumco Corporation
- Masataka Hourai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing silicon single crystal
- Patent number 7,014,704
- Issue date Mar 21, 2006
- Sumitomo Mitsubishi Silicon Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer
- Patent number 6,905,771
- Issue date Jun 14, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Toshiaki Ono
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing epitaxial wafer and method of producing sin...
- Patent number 6,835,245
- Issue date Dec 28, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing epitaxial wafers
- Patent number 6,709,957
- Issue date Mar 23, 2004
- Sumitomo Mitsubishi Silicon Corporation
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of pulling up silicon single crystal and method of manufactu...
- Patent number 6,569,237
- Issue date May 27, 2003
- Sumitomo Metal Industries, Ltd.
- Tadami Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-quality silicon single crystal and method of producing the same
- Patent number 6,514,335
- Issue date Feb 4, 2003
- Sumitomo Metal Industries, Ltd.
- Kazuyuki Egashira
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making a silicon single crystal wafer
- Patent number 6,113,687
- Issue date Sep 5, 2000
- Sumitomo Metal Industries, Ltd.
- Masataka Horai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Silicon wafer, process for producing the same and method of growing...
- Publication number 20060156969
- Publication date Jul 20, 2006
- SUMCO CORPORATION
- Masataka Hourai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for growing silicon single crystal
- Publication number 20040244674
- Publication date Dec 9, 2004
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer
- Publication number 20040089225
- Publication date May 13, 2004
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing epitaxial wafers
- Publication number 20030008447
- Publication date Jan 9, 2003
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing epitaxial wafer and method of producing sin...
- Publication number 20020017234
- Publication date Feb 14, 2002
- Sumitomo Metal Industries, Ltd., Osaka-shi, Japan
- Toshiaki Ono
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of pulling up silicon single crystal and method of manufactu...
- Publication number 20020000189
- Publication date Jan 3, 2002
- Sumitomo Metal Industries, Ltd.
- Tadami Tanaka
- C30 - CRYSTAL GROWTH

Tadami Tanaka

Person

Patents Grantslast 30 patents

Silicon wafer, SOI substrate, method for growing silicon single cry...

Method for growing silicon single crystal

Silicon wafer

Method of manufacturing epitaxial wafer and method of producing sin...

Method of producing epitaxial wafers

Method of pulling up silicon single crystal and method of manufactu...

High-quality silicon single crystal and method of producing the same

Method for making a silicon single crystal wafer

Patents Applicationslast 30 patents

Silicon wafer, process for producing the same and method of growing...

Method for growing silicon single crystal

Silicon wafer

Method of producing epitaxial wafers

Method of manufacturing epitaxial wafer and method of producing sin...

Method of pulling up silicon single crystal and method of manufactu...