TADASHI NISHIMURA

Person

TOKYO, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,727,552
- Issue date Apr 27, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide film and manufacturing m...
- Patent number 6,649,976
- Issue date Nov 18, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI based transistor inside an insulation layer with conductive bum...
- Patent number 6,459,125
- Issue date Oct 1, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,358,783
- Issue date Mar 19, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different field oxide sizes
- Patent number 6,351,014
- Issue date Feb 26, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide film and manufacturing m...
- Patent number 6,319,805
- Issue date Nov 20, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,214,664
- Issue date Apr 10, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a common substrate bias
- Patent number 6,198,134
- Issue date Mar 6, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,069,379
- Issue date May 30, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide film
- Patent number 6,051,494
- Issue date Apr 18, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device having an SOI structure
- Patent number 5,937,284
- Issue date Aug 10, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate having monocrystal silicon layer on insulating film
- Patent number 5,891,265
- Issue date Apr 6, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor substrate having total and pa...
- Patent number 5,801,080
- Issue date Sep 1, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a SOI substrate having a monocrystalline si...
- Patent number 5,741,717
- Issue date Apr 21, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor having a buried impurity region and method of...
- Patent number 5,721,444
- Issue date Feb 24, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Toshiyuki Oashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide film
- Patent number 5,659,194
- Issue date Aug 19, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device on an SOI substrate
- Patent number 5,652,454
- Issue date Jul 29, 1997
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an SOI structure
- Patent number 5,619,053
- Issue date Apr 8, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing substrate having semiconductor on insulator
- Patent number 5,616,507
- Issue date Apr 1, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved substrate bias voltage generatin...
- Patent number 5,557,231
- Issue date Sep 17, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having piezo resistance
- Patent number 5,471,086
- Issue date Nov 28, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ipposhi
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing substrate having semiconductor on insulator
- Patent number 5,441,899
- Issue date Aug 15, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an SOI structure and a manufacturing me...
- Patent number 5,440,161
- Issue date Aug 8, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thin film SOI MOSFET
- Patent number 5,424,225
- Issue date Jun 13, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,413,968
- Issue date May 9, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional shape measuring device and three-dimensional shap...
- Patent number 5,381,235
- Issue date Jan 10, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- G01 - MEASURING TESTING
Information Patent Grant
Process for producing single crystal semiconductor layer and semico...
- Patent number 5,371,381
- Issue date Dec 6, 1994
- Agency of Industrial Science and Technology
- Kazuyuki Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser beam irradiating apparatus enabling uniform laser annealing
- Patent number 5,357,365
- Issue date Oct 18, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ipposhi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Thin-film SOI MOSFET
- Patent number 5,343,051
- Issue date Aug 30, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor pressure sensor and method of fabricating the same
- Patent number 5,336,918
- Issue date Aug 9, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ipposhi
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040135211
- Publication date Jul 15, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating same
- Publication number 20020110954
- Publication date Aug 15, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020105031
- Publication date Aug 8, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having metal silicide film and manufacturing m...
- Publication number 20020048919
- Publication date Apr 25, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Iwamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT FIELD OXIDE SIZES
- Publication number 20020005552
- Publication date Jan 17, 2002
- Yasuo Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20020003259
- Publication date Jan 10, 2002
- SHIGENOBU MAEDA
- H01 - BASIC ELECTRIC ELEMENTS

TADASHI NISHIMURA

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device having metal silicide film and manufacturing m...

SOI based transistor inside an insulation layer with conductive bum...

Semiconductor device and method of manufacturing the same

Semiconductor device having different field oxide sizes

Semiconductor device having metal silicide film and manufacturing m...

Method of manufacturing semiconductor device

Semiconductor device having a common substrate bias

Semiconductor device and method of manufacturing the same

Semiconductor device having metal silicide film

Method of making a semiconductor device having an SOI structure

SOI substrate having monocrystal silicon layer on insulating film

Method of manufacturing semiconductor substrate having total and pa...

Method of manufacturing a SOI substrate having a monocrystalline si...

Thin-film transistor having a buried impurity region and method of...

Semiconductor device having metal silicide film

Semiconductor device on an SOI substrate

Semiconductor device having an SOI structure

Method of manufacturing substrate having semiconductor on insulator

Semiconductor device with improved substrate bias voltage generatin...

Semiconductor device having piezo resistance

Method of manufacturing substrate having semiconductor on insulator

Semiconductor device having an SOI structure and a manufacturing me...

Method of manufacturing a thin film SOI MOSFET

Semiconductor device and manufacturing method thereof

Three-dimensional shape measuring device and three-dimensional shap...

Process for producing single crystal semiconductor layer and semico...

Laser beam irradiating apparatus enabling uniform laser annealing

Thin-film SOI MOSFET

Semiconductor pressure sensor and method of fabricating the same

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating same

Semiconductor device and method of manufacturing the same

Semiconductor device having metal silicide film and manufacturing m...

SEMICONDUCTOR DEVICE HAVING DIFFERENT FIELD OXIDE SIZES

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME