Takashi AIGO

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial silicon carbide single crystal wafer and process for prod...
- Patent number 11,114,295
- Issue date Sep 7, 2021
- Showa Denko K.K.
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial silicon carbide single crystal wafer and process for prod...
- Patent number 10,727,047
- Issue date Jul 28, 2020
- Showa Denko K.K.
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing epitaxial silicon carbide single crystal wafer
- Patent number 10,626,520
- Issue date Apr 21, 2020
- Showa Denko K.K.
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing epitaxial silicon carbide wafers
- Patent number 10,450,672
- Issue date Oct 22, 2019
- Showa Denko K.K.
- Takashi Aigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method for silicon carbide
- Patent number 10,435,813
- Issue date Oct 8, 2019
- Showa Denko K.K.
- Wataru Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing epitaxial silicon carbide wafer
- Patent number 9,957,639
- Issue date May 1, 2018
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
- Patent number 9,691,607
- Issue date Jun 27, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production process of epitaxial silicon carbide single crystal subs...
- Patent number 8,927,396
- Issue date Jan 6, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
- Patent number 8,901,570
- Issue date Dec 2, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor substrate and process of producing same
- Patent number 5,833,749
- Issue date Nov 10, 1998
- Nippon Steel Corporation
- Akihiro Moritani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 5,689,124
- Issue date Nov 18, 1997
- Nippon Steel Corporation
- Yoji Morikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing compound semiconductor on silicon wafer
- Patent number 5,438,951
- Issue date Aug 8, 1995
- Nippon Steel Corporation
- Akiyoshi Tachikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...
- Publication number 20200312656
- Publication date Oct 1, 2020
- SHOWA DENKO K.K.
- Takashi AIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE
- Publication number 20180266012
- Publication date Sep 20, 2018
- SHOWA DENKO K.K.
- Wataru ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER
- Publication number 20180216251
- Publication date Aug 2, 2018
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...
- Publication number 20170365463
- Publication date Dec 21, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFERS
- Publication number 20170159208
- Publication date Jun 8, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER
- Publication number 20160251775
- Publication date Sep 1, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL...
- Publication number 20150361585
- Publication date Dec 17, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
- Publication number 20150075422
- Publication date Mar 19, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...
- Publication number 20130320357
- Publication date Dec 5, 2013
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
- Publication number 20130217213
- Publication date Aug 22, 2013
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
- Publication number 20130049014
- Publication date Feb 28, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
- Publication number 20130029158
- Publication date Jan 31, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
- Publication number 20110278596
- Publication date Nov 17, 2011
- Takashi Aigo
- C30 - CRYSTAL GROWTH

Takashi AIGO

Person

Patents Grantslast 30 patents

Epitaxial silicon carbide single crystal wafer and process for prod...

Epitaxial silicon carbide single crystal wafer and process for prod...

Method for producing epitaxial silicon carbide single crystal wafer

Method for producing epitaxial silicon carbide wafers

Epitaxial growth method for silicon carbide

Method for producing epitaxial silicon carbide wafer

Process for producing epitaxial silicon carbide single crystal subs...

Production process of epitaxial silicon carbide single crystal subs...

Epitaxial silicon carbide single crystal substrate and process for...

Compound semiconductor substrate and process of producing same

Semiconductor device

Method of growing compound semiconductor on silicon wafer

Patents Applicationslast 30 patents

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...

EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFERS

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER

METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL...

EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...

PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...

PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...

Epitaxial silicon carbide monocrystalline substrate and method of p...