Fujita, et al., Effect of Pre-Growth Treatment of Si Substrates on GaAs Growth on Si by MOCVD, The Sumitomo Search, No. 47, Oct., 1991, pp. 22-32. |
Fujita, et al., AsH.sub.3. preflow effects on initial states of GaAs grown on Si by metalorganic chemical vapor deposition, Appl. Phy. Lett. 59(26), Dec., 1991, pp. 3458-3460. |
Ohori, et al., A novel method for HEMT-on-Si by MOVPE, Inst. Phys. Conf. Ser. No. 129, Chapter 3, 1993, pp. 175-180. |
Kaminishi, GaAs on Si Technology, Solid State Technology, vol. 30, No. 11, (1987), pp. 91-97. |