Takashi Ajima

Person

Kamakura, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having insulating layer including polyimide film
- Patent number 4,853,760
- Issue date Aug 1, 1989
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masahiro Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an improved bonding section
- Patent number 4,636,832
- Issue date Jan 13, 1987
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masahiro Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a multilayer wiring structure using a p...
- Patent number 4,618,878
- Issue date Oct 21, 1986
- Kabushiki Kaisha Toshiba
- Masaharu Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of multilayer wiring structure
- Patent number 4,613,888
- Issue date Sep 23, 1986
- Kabushiki Kaisha Toshiba
- Yasukazu Mase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,560,642
- Issue date Dec 24, 1985
- Toyko Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metallization structure having flat surface on s...
- Patent number 4,520,041
- Issue date May 28, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masaharu Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming deep aluminum doped silicon by implanting Al and...
- Patent number 4,515,642
- Issue date May 7, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Takashi Ajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using epitaxially re...
- Patent number 4,479,830
- Issue date Oct 30, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for etching a metal film on a semiconductor wafer
- Patent number 4,462,856
- Issue date Jul 31, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masahiro Abe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming reproducible impurity zone of gallium or aluminum...
- Patent number 4,426,234
- Issue date Jan 17, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Jiro Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making transistors by ion implantations, electron beam ir...
- Patent number 4,415,372
- Issue date Nov 15, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device of mesa type
- Patent number 4,404,736
- Issue date Sep 20, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Yutaka Koshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using silicon carbid...
- Patent number 4,351,894
- Issue date Sep 28, 1982
- Tokyo Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with thermally compensating SiO.sub.2 -silicat...
- Patent number 4,224,636
- Issue date Sep 23, 1980
- Tokyo Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicon carbide-glass-silicon carbide pas...
- Patent number 4,161,743
- Issue date Jul 17, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a P-N junction utilizing polycrystalline silicon
- Patent number 4,146,413
- Issue date Mar 27, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Toshio Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device
- Patent number 4,123,564
- Issue date Oct 31, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Takashi Ajima
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Ajima

Person

Patents Grantslast 30 patents

Semiconductor device having insulating layer including polyimide film

Semiconductor device with an improved bonding section

Semiconductor device having a multilayer wiring structure using a p...

Semiconductor device of multilayer wiring structure

Method of manufacturing a semiconductor device

Method for forming metallization structure having flat surface on s...

Method of forming deep aluminum doped silicon by implanting Al and...

Method of manufacturing a semiconductor device using epitaxially re...

System for etching a metal film on a semiconductor wafer

Method of forming reproducible impurity zone of gallium or aluminum...

Method of making transistors by ion implantations, electron beam ir...

Method for manufacturing a semiconductor device of mesa type

Method of manufacturing a semiconductor device using silicon carbid...

Semiconductor device with thermally compensating SiO.sub.2 -silicat...

Semiconductor device with silicon carbide-glass-silicon carbide pas...

Method of producing a P-N junction utilizing polycrystalline silicon

Method of producing semiconductor device