Takashi Ando

Person

Tuckahoe, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transfer length phase change material (PCM) based bridge cell
- Patent number 12,150,392
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Guy M. Cohen
Information Patent Grant
Random weight initialization of non-volatile memory array
- Patent number 12,135,497
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Cheng Chi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physically unclonable function based on a phase change material array
- Patent number 12,099,616
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 12,058,943
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Decoupling capacitor inside gate cut trench
- Patent number 12,057,387
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET unit cells for neuromorphic computing
- Patent number 12,026,605
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM with high work function cap
- Patent number 12,004,436
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Grant
Ferroelectric and paraelectric stack capacitors
- Patent number 11,990,470
- Issue date May 21, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile analog resistive memory cells implementing ferroelectr...
- Patent number 11,948,618
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-assisted device with integrated thin-film heater
- Patent number 11,942,388
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,937,522
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Transistor gates having embedded metal-insulator-metal capacitors
- Patent number 11,929,404
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Alexander Reznicek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact inside gate cut trench
- Patent number 11,916,014
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Percolation doping of inorganic-organic frameworks for multiple dev...
- Patent number 11,915,926
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Leonidas Ernesto Ocola
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor
- Patent number 11,916,099
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile phase change material logic device
- Patent number 11,915,751
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory with integr...
- Patent number 11,915,734
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Pouya Hashemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with ovonic threshold switch
- Patent number 11,910,734
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Nanbo Gong
Information Patent Grant
RRAM filament spatial localization using a laser stimulation
- Patent number 11,901,002
- Issue date Feb 13, 2024
- International Business Machines Corporation
- Franco Stellari
- G11 - INFORMATION STORAGE
Information Patent Grant
ReRAM analog PUF using filament location
- Patent number 11,864,474
- Issue date Jan 2, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate induced drain leakage reduction in FinFETs
- Patent number 11,855,180
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with dual threshold voltage
- Patent number 11,855,148
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory random number generator
- Patent number 11,856,798
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Physical unclonable function device with phase change
- Patent number 11,844,293
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma co-doping to reduce the forming voltage in resistive random...
- Patent number 11,844,290
- Issue date Dec 12, 2023
- Tokyo Electron Limited
- Devi Koty
Information Patent Grant
Co-integrated channel and gate formation scheme for nanosheet trans...
- Patent number 11,830,877
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER
- Publication number 20240373654
- Publication date Nov 7, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
FLOATING GATE BIOSENSOR
- Publication number 20240361271
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM
- Publication number 20240349631
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Takashi Ando
Information Patent Application
PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION
- Publication number 20240338214
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED ZERO TRACK SKIP
- Publication number 20240234306
- Publication date Jul 11, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20240224819
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Chanro Park
Information Patent Application
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240206352
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Application
NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION
- Publication number 20240202512
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...
- Publication number 20240201583
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Cheng Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POW...
- Publication number 20240203982
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
- Publication number 20240194236
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID ANALOG SYSTEM FOR TRANSFER LEARNING
- Publication number 20240185057
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC SKIP-LEVEL VIA STRUCTURE
- Publication number 20240186177
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ZERO TRACK SKIP
- Publication number 20240136281
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR METAL-INSULATOR-METAL STRUCTURE
- Publication number 20240096793
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS
- Publication number 20240097006
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE ERASURE
- Publication number 20240088065
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC
- Publication number 20240074207
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR (MIMCAP)-BASED PHYSICALLY UNCLONABL...
- Publication number 20240006346
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Cheng Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Film with Buffer Layers for Improved Reliability of M...
- Publication number 20230420491
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
- Publication number 20230422461
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...
- Publication number 20230352590
- Publication date Nov 2, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH AS...
- Publication number 20230335588
- Publication date Oct 19, 2023
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF FORMING
- Publication number 20230329127
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Devi Koty

Takashi Ando

Person

Patents Grantslast 30 patents

Transfer length phase change material (PCM) based bridge cell

Random weight initialization of non-volatile memory array

Gate-all-around field-effect transistor having source side lateral...

Physically unclonable function based on a phase change material array

Phase-change material-based XOR logic gates

Decoupling capacitor inside gate cut trench

FeFET unit cells for neuromorphic computing

RRAM with high work function cap

Ferroelectric and paraelectric stack capacitors

Nanosheet transistor with ferroelectric region

BEOL fat wire level ground rule compatible embedded artificial inte...

Non-volatile analog resistive memory cells implementing ferroelectr...

Temperature-assisted device with integrated thin-film heater

Confining filament at pillar center for memory devices

Transistor gates having embedded metal-insulator-metal capacitors

FeFET with double gate structure

Gate contact inside gate cut trench

Percolation doping of inorganic-organic frameworks for multiple dev...

Multilayer dielectric for metal-insulator-metal capacitor

Nonvolatile phase change material logic device

Spin-orbit-torque magnetoresistive random-access memory with integr...

Phase change memory cell with ovonic threshold switch

RRAM filament spatial localization using a laser stimulation

ReRAM analog PUF using filament location

Gate induced drain leakage reduction in FinFETs

Vertical field effect transistor with dual threshold voltage

Resistive random-access memory random number generator

Physical unclonable function device with phase change

Plasma co-doping to reduce the forming voltage in resistive random...

Co-integrated channel and gate formation scheme for nanosheet trans...

Patents Applicationslast 30 patents

HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER

FLOATING GATE BIOSENSOR

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION

SELF-ALIGNED ZERO TRACK SKIP

SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL

TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY

NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION

PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...

DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POW...

EMBEDDED ReRAM WITH BACKSIDE CONTACT

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

HYBRID ANALOG SYSTEM FOR TRANSFER LEARNING

ASYMMETRIC SKIP-LEVEL VIA STRUCTURE

PROCESS-INDUCED FORMING OF OXIDE RRAM

PIEZOELECTRIC MEMORY

SELF-ALIGNED ZERO TRACK SKIP

NON-PLANAR METAL-INSULATOR-METAL STRUCTURE

GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS

FERROELECTRIC MEMORY DEVICE ERASURE

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC

RRAM WITH HIGH WORK FUNCTION CAP

METAL-INSULATOR-METAL CAPACITOR (MIMCAP)-BASED PHYSICALLY UNCLONABL...

Ferroelectric Film with Buffer Layers for Improved Reliability of M...

DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH

FINFET DEVICE WITH PARTIAL INTERFACE DIPOLE FORMATION FOR REDUCTION...

NANOSHEET METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH AS...

RESISTIVE MEMORY DEVICE AND METHOD OF FORMING