Takashi Ando

Person

Tuckahoe, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Global heater for phase change memory
- Patent number 12,364,174
- Issue date Jul 15, 2025
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device identification using preformed resistive memory
- Patent number 12,310,034
- Issue date May 20, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked access device and resistive memory
- Patent number 12,284,922
- Issue date Apr 22, 2025
- International Business Machines Corporation
- Hiroyuki Miyazoe
Information Patent Grant
RRAM filament location for physically unclonable function
- Patent number 12,272,657
- Issue date Apr 8, 2025
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Negative capacitance for ferroelectric capacitive memory cell
- Patent number 12,266,393
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-Vt nanosheet devices
- Patent number 12,255,106
- Issue date Mar 18, 2025
- Interational Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 12,225,833
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Takashi Ando
Information Patent Grant
Resistive switching device having a protective electrode ring
- Patent number 12,225,835
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Takashi Ando
Information Patent Grant
Phase change memory cell with superlattice based thermal barrier
- Patent number 12,207,573
- Issue date Jan 21, 2025
- International Business Machines Corporation
- Praneet Adusumilli
Information Patent Grant
Using different work-functions to reduce gate-induced drain leakage...
- Patent number 12,191,352
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate patterning for logic and SRAM in nanosheet devices
- Patent number 12,156,395
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transfer length phase change material (PCM) based bridge cell
- Patent number 12,150,392
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Guy M. Cohen
Information Patent Grant
Random weight initialization of non-volatile memory array
- Patent number 12,135,497
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Cheng Chi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physically unclonable function based on a phase change material array
- Patent number 12,099,616
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 12,058,943
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Decoupling capacitor inside gate cut trench
- Patent number 12,057,387
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET unit cells for neuromorphic computing
- Patent number 12,026,605
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM with high work function cap
- Patent number 12,004,436
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Grant
Ferroelectric and paraelectric stack capacitors
- Patent number 11,990,470
- Issue date May 21, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile analog resistive memory cells implementing ferroelectr...
- Patent number 11,948,618
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-assisted device with integrated thin-film heater
- Patent number 11,942,388
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,937,522
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Transistor gates having embedded metal-insulator-metal capacitors
- Patent number 11,929,404
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Alexander Reznicek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact inside gate cut trench
- Patent number 11,916,014
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Percolation doping of inorganic-organic frameworks for multiple dev...
- Patent number 11,915,926
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Leonidas Ernesto Ocola
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multilayer dielectric for metal-insulator-metal capacitor
- Patent number 11,916,099
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERCONNECT LINES WITH LINE WIDTH PROFILE
- Publication number 20250226313
- Publication date Jul 10, 2025
- International Business Machines Corporation
- James P. Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CHANNEL REMOVAL
- Publication number 20250204048
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Reinaldo Vega
Information Patent Application
NANOSHEET FET WITH EXPANDED GATE REGION
- Publication number 20250194155
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE STRUCTURES WITH VARYING LAYER CHARACTERISTICS
- Publication number 20250194182
- Publication date Jun 12, 2025
- International Business Machines Corporation
- James P. Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH ANGLED ELECTRODE PROFILE
- Publication number 20250194442
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Min Gyu Sung
Information Patent Application
COMPRESSIVE STRAIN IN STACKED NANOSHEET FIELD EFFECT TRANSISTOR
- Publication number 20250185303
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET DEVICES WITH INTERFACIAL LAYERS
- Publication number 20250185355
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Debarghya Sarkar
Information Patent Application
REDUCED GATE EDGE CAPACITANCE
- Publication number 20250159963
- Publication date May 15, 2025
- International Business Machines Corporation
- Takashi Ando
Information Patent Application
SINGLE WORK FUNCTION METAL AND MULTIPLE THRESHOLD VOLTAGE SCHEME
- Publication number 20250081528
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Jingyun Zhang
Information Patent Application
FLEXIBLE TRACKPLAN FOR POWER DELIVERY
- Publication number 20250054863
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE TRANSISTOR WITH CONCAVE AND CONVEX EDGES
- Publication number 20250048675
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE
- Publication number 20250048695
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER
- Publication number 20240373654
- Publication date Nov 7, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
FLOATING GATE BIOSENSOR
- Publication number 20240361271
- Publication date Oct 31, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM
- Publication number 20240349631
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Takashi Ando
Information Patent Application
PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION
- Publication number 20240338214
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED ZERO TRACK SKIP
- Publication number 20240234306
- Publication date Jul 11, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20240224819
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Chanro Park
Information Patent Application
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20240206352
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
Information Patent Application
PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...
- Publication number 20240201583
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Cheng Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION
- Publication number 20240202512
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POW...
- Publication number 20240203982
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
- Publication number 20240194236
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID ANALOG SYSTEM FOR TRANSFER LEARNING
- Publication number 20240185057
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ASYMMETRIC SKIP-LEVEL VIA STRUCTURE
- Publication number 20240186177
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ZERO TRACK SKIP
- Publication number 20240136281
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR METAL-INSULATOR-METAL STRUCTURE
- Publication number 20240096793
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Ando

Person

Patents Grantslast 30 patents

Global heater for phase change memory

Semiconductor device identification using preformed resistive memory

Stacked access device and resistive memory

RRAM filament location for physically unclonable function

Negative capacitance for ferroelectric capacitive memory cell

Multi-Vt nanosheet devices

Oxide-based resistive memory having a plasma-exposed bottom electrode

Resistive switching device having a protective electrode ring

Phase change memory cell with superlattice based thermal barrier

Using different work-functions to reduce gate-induced drain leakage...

Metal gate patterning for logic and SRAM in nanosheet devices

Transfer length phase change material (PCM) based bridge cell

Random weight initialization of non-volatile memory array

Gate-all-around field-effect transistor having source side lateral...

Physically unclonable function based on a phase change material array

Phase-change material-based XOR logic gates

Decoupling capacitor inside gate cut trench

FeFET unit cells for neuromorphic computing

RRAM with high work function cap

Ferroelectric and paraelectric stack capacitors

Nanosheet transistor with ferroelectric region

BEOL fat wire level ground rule compatible embedded artificial inte...

Non-volatile analog resistive memory cells implementing ferroelectr...

Temperature-assisted device with integrated thin-film heater

Confining filament at pillar center for memory devices

Transistor gates having embedded metal-insulator-metal capacitors

FeFET with double gate structure

Gate contact inside gate cut trench

Percolation doping of inorganic-organic frameworks for multiple dev...

Multilayer dielectric for metal-insulator-metal capacitor

Patents Applicationslast 30 patents

INTERCONNECT LINES WITH LINE WIDTH PROFILE

SELF-ALIGNED BACKSIDE CHANNEL REMOVAL

NANOSHEET FET WITH EXPANDED GATE REGION

STACKED DEVICE STRUCTURES WITH VARYING LAYER CHARACTERISTICS

RESISTIVE MEMORY WITH ANGLED ELECTRODE PROFILE

COMPRESSIVE STRAIN IN STACKED NANOSHEET FIELD EFFECT TRANSISTOR

STACKED NANOSHEET DEVICES WITH INTERFACIAL LAYERS

REDUCED GATE EDGE CAPACITANCE

SINGLE WORK FUNCTION METAL AND MULTIPLE THRESHOLD VOLTAGE SCHEME

FLEXIBLE TRACKPLAN FOR POWER DELIVERY

MULTI-GATE TRANSISTOR WITH CONCAVE AND CONVEX EDGES

MULTI-GATE FET WITH SELF-ALIGNED TAPERED ACTIVE REGION EDGE

HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER

FLOATING GATE BIOSENSOR

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION

SELF-ALIGNED ZERO TRACK SKIP

SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL

TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY

PHYSICALLY DETECTABLE ID INTRODUCED BY LITHOGRAPHY SRAF INSERTION F...

NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION

DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POW...

EMBEDDED ReRAM WITH BACKSIDE CONTACT

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

HYBRID ANALOG SYSTEM FOR TRANSFER LEARNING

ASYMMETRIC SKIP-LEVEL VIA STRUCTURE

PROCESS-INDUCED FORMING OF OXIDE RRAM

PIEZOELECTRIC MEMORY

SELF-ALIGNED ZERO TRACK SKIP

NON-PLANAR METAL-INSULATOR-METAL STRUCTURE