Takayuki NISHIURA

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 10,078,059
- Issue date Sep 18, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate, silicon carbide semiconductor device, an...
- Patent number 9,691,608
- Issue date Jun 27, 2017
- Sumitomo Electric Industries, Ltd
- So Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 9,570,540
- Issue date Feb 14, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrate
- Patent number 9,035,429
- Issue date May 19, 2015
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Compound semiconductor substrate
- Patent number 9,000,567
- Issue date Apr 7, 2015
- Sumitomo Electric Industries, Ltd.
- Kenichi Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing agent, compound semiconductor manufacturing method, and s...
- Patent number 8,841,215
- Issue date Sep 23, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 8,828,140
- Issue date Sep 9, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of packaging compound semiconductor substrates
- Patent number 8,381,493
- Issue date Feb 26, 2013
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL
Information Patent Grant
Method of processing a surface of group III nitride crystal and gro...
- Patent number 8,338,299
- Issue date Dec 25, 2012
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 8,192,543
- Issue date Jun 5, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Damage evaluation method of compound semiconductor member, producti...
- Patent number 8,177,911
- Issue date May 15, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Grant
Method of polishing compound semiconductor substrate, compound semi...
- Patent number 8,133,815
- Issue date Mar 13, 2012
- Sumitomo Electric Industries, Ltd.
- Yoshio Mezaki
- B24 - GRINDING POLISHING
Information Patent Grant
Production method of compound semiconductor member
- Patent number 8,115,927
- Issue date Feb 14, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Grant
GaAs semiconductor substrate for group III-V compound semiconductor...
- Patent number 8,044,493
- Issue date Oct 25, 2011
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor substrate manufacturing method
- Patent number 7,960,284
- Issue date Jun 14, 2011
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 7,854,804
- Issue date Dec 21, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Surface treatment method for nitride crystal, nitride crystal subst...
- Patent number 7,851,381
- Issue date Dec 14, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Inspection method of compound semiconductor substrate, compound sem...
- Patent number 7,737,043
- Issue date Jun 15, 2010
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, and method for working nitride sem...
- Patent number 7,713,844
- Issue date May 11, 2010
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs semiconductor substrate and fabrication method thereof
- Patent number 7,619,301
- Issue date Nov 17, 2009
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based compound semiconductor, method of cleaning a compound...
- Patent number 7,569,493
- Issue date Aug 4, 2009
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y cry...
- Patent number 7,507,668
- Issue date Mar 24, 2009
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of surface treating substrates and method of manufacturing I...
- Patent number 7,432,186
- Issue date Oct 7, 2008
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Patent number 7,416,604
- Issue date Aug 26, 2008
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20170115239
- Publication date Apr 27, 2017
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AN...
- Publication number 20160086798
- Publication date Mar 24, 2016
- Sumitomo Electric Industries, Ltd.
- So Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20140349112
- Publication date Nov 27, 2014
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...
- Publication number 20140124826
- Publication date May 8, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20130292802
- Publication date Nov 7, 2013
- Keiji ISHIBASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GRO...
- Publication number 20130075867
- Publication date Mar 28, 2013
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE
- Publication number 20120292747
- Publication date Nov 22, 2012
- Sumitomo Electric Industries, Ltd.
- Kenichi MIYAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polishing Agent, Compound Semiconductor Manufacturing Method, and S...
- Publication number 20120164833
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...
- Publication number 20120100643
- Publication date Apr 26, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR...
- Publication number 20110018105
- Publication date Jan 27, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GRO...
- Publication number 20100248478
- Publication date Sep 30, 2010
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...
- Publication number 20100227532
- Publication date Sep 9, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...
- Publication number 20100123168
- Publication date May 20, 2010
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...
- Publication number 20100068834
- Publication date Mar 18, 2010
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND...
- Publication number 20090291567
- Publication date Nov 26, 2009
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Packaging Compound Semiconductor Substrates
- Publication number 20090249747
- Publication date Oct 8, 2009
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL
Information Patent Application
POLISHING SLURRY, METHOD OF TREATING SURFACE OF GAXIN1-XASYP1-Y CRY...
- Publication number 20090159845
- Publication date Jun 25, 2009
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME,...
- Publication number 20090140390
- Publication date Jun 4, 2009
- Sumitomo Electric Industries, Ltd.
- Takayuki NISHIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Polishing Compound Semiconductor Substrate, Compound Semi...
- Publication number 20080299350
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Yoshio Mezaki
- B24 - GRINDING POLISHING
Information Patent Application
GaAs semiconductor substrate and fabrication method thereof
- Publication number 20080296738
- Publication date Dec 4, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Cleaning Gaas Substrate, Method of Producing Gaas Substra...
- Publication number 20080292877
- Publication date Nov 27, 2008
- Yusuke Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Publication number 20080272392
- Publication date Nov 6, 2008
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride crystal, nitride crystal substrate, epilayer-containing nit...
- Publication number 20080271667
- Publication date Nov 6, 2008
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V Compound Semiconductor Substrate Manufacturing Method
- Publication number 20080176400
- Publication date Jul 24, 2008
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Application
Damage evaluation method of compound semiconductor member, producti...
- Publication number 20080044338
- Publication date Feb 21, 2008
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Application
Surface treatment method for nitride crystal, nitride crystal subst...
- Publication number 20070281484
- Publication date Dec 6, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Inspection method of compound semiconductor substrate, compound sem...
- Publication number 20070269989
- Publication date Nov 22, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of processing a surface of group III nitride crystal and gro...
- Publication number 20070254401
- Publication date Nov 1, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH
Information Patent Application
Surface treatment method of compound semiconductor substrate, fabri...
- Publication number 20070207630
- Publication date Sep 6, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor substrate, and method for working nitride sem...
- Publication number 20070080366
- Publication date Apr 12, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takayuki Nishiura
- C30 - CRYSTAL GROWTH

Takayuki NISHIURA

Person

Patents Grantslast 30 patents

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Silicon carbide substrate, silicon carbide semiconductor device, an...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Group III nitride crystal substrate

Compound semiconductor substrate

Polishing agent, compound semiconductor manufacturing method, and s...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Method of packaging compound semiconductor substrates

Method of processing a surface of group III nitride crystal and gro...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Damage evaluation method of compound semiconductor member, producti...

Method of polishing compound semiconductor substrate, compound semi...

Production method of compound semiconductor member

GaAs semiconductor substrate for group III-V compound semiconductor...

III-V compound semiconductor substrate manufacturing method

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Surface treatment method for nitride crystal, nitride crystal subst...

Inspection method of compound semiconductor substrate, compound sem...

Nitride semiconductor substrate, and method for working nitride sem...

GaAs semiconductor substrate and fabrication method thereof

Nitride-based compound semiconductor, method of cleaning a compound...

Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y cry...

Method of surface treating substrates and method of manufacturing I...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Patents Applicationslast 30 patents

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AN...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GRO...

COMPOUND SEMICONDUCTOR SUBSTRATE

Polishing Agent, Compound Semiconductor Manufacturing Method, and S...

DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...

NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR...

METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GRO...

METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROU...

NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NIT...

DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...

NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND...

Method of Packaging Compound Semiconductor Substrates

POLISHING SLURRY, METHOD OF TREATING SURFACE OF GAXIN1-XASYP1-Y CRY...

GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME,...

Method of Polishing Compound Semiconductor Substrate, Compound Semi...

GaAs semiconductor substrate and fabrication method thereof

Method of Cleaning Gaas Substrate, Method of Producing Gaas Substra...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

Nitride crystal, nitride crystal substrate, epilayer-containing nit...

III-V Compound Semiconductor Substrate Manufacturing Method

Damage evaluation method of compound semiconductor member, producti...

Surface treatment method for nitride crystal, nitride crystal subst...

Inspection method of compound semiconductor substrate, compound sem...

Method of processing a surface of group III nitride crystal and gro...

Surface treatment method of compound semiconductor substrate, fabri...

Nitride semiconductor substrate, and method for working nitride sem...