Takehiro YOSHIDA

Person

HItachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor substrate, laminated structure, and method fo...
- Patent number 12,091,774
- Issue date Sep 17, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 12,071,707
- Issue date Aug 27, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wearable device, control device, system, control method, and non- t...
- Patent number 12,032,163
- Issue date Jul 9, 2024
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nitride semiconductor substrate, method for manufacturing nitride s...
- Patent number 11,970,784
- Issue date Apr 30, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, laminate, substrate selection prog...
- Patent number 11,967,617
- Issue date Apr 23, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 11,908,688
- Issue date Feb 20, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,873,578
- Issue date Jan 16, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride crystal substrate having a diameter of 4 inches o...
- Patent number 11,718,927
- Issue date Aug 8, 2023
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Image processing apparatus that performs processing concerning disp...
- Patent number 11,706,396
- Issue date Jul 18, 2023
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Crystal laminate, semiconductor device and method for manufacturing...
- Patent number 11,640,906
- Issue date May 2, 2023
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal
- Patent number 11,339,053
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Nitride crystal substrate, semiconductor laminate, method of manufa...
- Patent number 11,339,500
- Issue date May 24, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate and nitrid...
- Patent number 11,094,539
- Issue date Aug 17, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Information processing apparatus, control method, and storage mediu...
- Patent number 11,064,087
- Issue date Jul 13, 2021
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nitride crystal
- Patent number 11,008,671
- Issue date May 18, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate, semiconductor laminate, laminated...
- Patent number 10,978,296
- Issue date Apr 13, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride crystal substrate and nitride crys...
- Patent number 10,683,587
- Issue date Jun 16, 2020
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate
- Patent number 10,584,031
- Issue date Mar 10, 2020
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group-III nitride semiconductor crystal su...
- Patent number 10,309,036
- Issue date Jun 4, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group-III nitride substrate and group-III...
- Patent number 10,290,489
- Issue date May 14, 2019
- Sciocs Company Limited
- Toshio Kitamura
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride crystal substrate and substrate fo...
- Patent number 10,260,165
- Issue date Apr 16, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing method
- Patent number 10,253,432
- Issue date Apr 9, 2019
- Sumitomo Chemical Company, Limited
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor single crystal substrate manufacturing method
- Patent number 10,100,434
- Issue date Oct 16, 2018
- Sumitomo Chemical Company, Limited
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing group III nitride substrate formed of a gr...
- Patent number 10,053,796
- Issue date Aug 21, 2018
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing group III nitride single crystal
- Patent number 9,234,299
- Issue date Jan 12, 2016
- Sciocs Company Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Image communication apparatus, image communication method, and memo...
- Patent number 9,083,559
- Issue date Jul 14, 2015
- Canon Kabushiki Kaisha
- Kazuhiro Sugawara
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Image communication apparatus, image communication method, and memo...
- Patent number 8,892,664
- Issue date Nov 18, 2014
- Canon Kabushiki Kaisha
- Kazuhiro Sugawara
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Wavelength selective switch
- Patent number 8,606,104
- Issue date Dec 10, 2013
- Olympus Corporation
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nitride semiconductor substrate, production method therefor and nit...
- Patent number 8,592,316
- Issue date Nov 26, 2013
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
WEARABLE DEVICE, CONTROL DEVICE, SYSTEM, CONTROL METHOD, AND NON-TR...
- Publication number 20240319502
- Publication date Sep 26, 2024
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
IMAGE DISPLAY SYSTEM
- Publication number 20240259540
- Publication date Aug 1, 2024
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
WEARABLE DEVICE, CONTROL DEVICE, SYSTEM, CONTROL METHOD, AND NON-TR...
- Publication number 20230168505
- Publication date Jun 1, 2023
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, LAMINATED STRUCTURE, AND METHOD FO...
- Publication number 20220106706
- Publication date Apr 7, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...
- Publication number 20220074071
- Publication date Mar 10, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMAGE PROCESSING APPARATUS THAT PERFORMS PROCESSING CONCERNING DISP...
- Publication number 20220078394
- Publication date Mar 10, 2022
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20220005691
- Publication date Jan 6, 2022
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED...
- Publication number 20210391427
- Publication date Dec 16, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20210355601
- Publication date Nov 18, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING NITRIDE S...
- Publication number 20210317597
- Publication date Oct 14, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20210292931
- Publication date Sep 23, 2021
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND STORAGE ME...
- Publication number 20210258505
- Publication date Aug 19, 2021
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
IMAGE PROCESSING DEVICE, IMAGE PROCESSING SERVER, IMAGE PROCESSING...
- Publication number 20210258496
- Publication date Aug 19, 2021
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, PROGRAM FO...
- Publication number 20210184003
- Publication date Jun 17, 2021
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND STORAGE MEDIUM
- Publication number 20200274984
- Publication date Aug 27, 2020
- Canon Kabushiki Kaisha
- Takehiro Yoshida
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
CRYSTAL LAMINATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20200227262
- Publication date Jul 16, 2020
- Sumitomo Chemical Company, Limited
- Fumimasa HORIKIRI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR LAMINATE, METHOD OF MANUFA...
- Publication number 20200208297
- Publication date Jul 2, 2020
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL
- Publication number 20200032417
- Publication date Jan 30, 2020
- SCIOCS COMPANY LIMITED
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL
- Publication number 20200031668
- Publication date Jan 30, 2020
- SCIOCS COMPANY LIMITED
- Hajime FUJIKURA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...
- Publication number 20200006049
- Publication date Jan 2, 2020
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE
- Publication number 20190292682
- Publication date Sep 26, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED...
- Publication number 20190198312
- Publication date Jun 27, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE
- Publication number 20190119112
- Publication date Apr 25, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SUBSTRATE AND GROUP-III...
- Publication number 20180114692
- Publication date Apr 26, 2018
- SCIOCS Company Limited
- Toshio KITAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYS...
- Publication number 20180087185
- Publication date Mar 29, 2018
- SCIOCS Company Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...
- Publication number 20180038010
- Publication date Feb 8, 2018
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170314157
- Publication date Nov 2, 2017
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE
- Publication number 20170247813
- Publication date Aug 31, 2017
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170191186
- Publication date Jul 6, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH

Takehiro YOSHIDA

Person

Patents Grantslast 30 patents

Nitride semiconductor substrate, laminated structure, and method fo...

Method for manufacturing nitride semiconductor substrate, nitride s...

Wearable device, control device, system, control method, and non- t...

Nitride semiconductor substrate, method for manufacturing nitride s...

Nitride semiconductor substrate, laminate, substrate selection prog...

Method for manufacturing nitride semiconductor substrate, nitride s...

Method for manufacturing nitride semiconductor substrate and nitrid...

Group III nitride crystal substrate having a diameter of 4 inches o...

Image processing apparatus that performs processing concerning disp...

Crystal laminate, semiconductor device and method for manufacturing...

Nitride crystal

Nitride crystal substrate, semiconductor laminate, method of manufa...

Method for manufacturing nitride semiconductor substrate and nitrid...

Information processing apparatus, control method, and storage mediu...

Nitride crystal

Nitride semiconductor substrate, semiconductor laminate, laminated...

Method for manufacturing nitride crystal substrate and nitride crys...

Nitride crystal substrate

Method for manufacturing group-III nitride semiconductor crystal su...

Method for manufacturing group-III nitride substrate and group-III...

Method for producing group-III nitride crystal, group-III nitride c...

Method for manufacturing nitride crystal substrate and substrate fo...

Semiconductor substrate manufacturing method

Nitride semiconductor single crystal substrate manufacturing method

Method for manufacturing group III nitride substrate formed of a gr...

Method for producing group III nitride single crystal

Image communication apparatus, image communication method, and memo...

Image communication apparatus, image communication method, and memo...

Wavelength selective switch

Nitride semiconductor substrate, production method therefor and nit...

Patents Applicationslast 30 patents

WEARABLE DEVICE, CONTROL DEVICE, SYSTEM, CONTROL METHOD, AND NON-TR...

IMAGE DISPLAY SYSTEM

WEARABLE DEVICE, CONTROL DEVICE, SYSTEM, CONTROL METHOD, AND NON-TR...

NITRIDE SEMICONDUCTOR SUBSTRATE, LAMINATED STRUCTURE, AND METHOD FO...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...

IMAGE PROCESSING APPARATUS THAT PERFORMS PROCESSING CONCERNING DISP...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

NITRIDE SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND STORAGE ME...

IMAGE PROCESSING DEVICE, IMAGE PROCESSING SERVER, IMAGE PROCESSING...

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, PROGRAM FO...

INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND STORAGE MEDIUM

CRYSTAL LAMINATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR LAMINATE, METHOD OF MANUFA...

NITRIDE CRYSTAL

NITRIDE CRYSTAL

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRID...

METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED...

NITRIDE CRYSTAL SUBSTRATE

METHOD FOR MANUFACTURING GROUP-III NITRIDE SUBSTRATE AND GROUP-III...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYS...

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...