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Patents Grants
last 30 patents
Information
Patent Grant
Method for manufacturing semiconductor device isolation region
Patent number
5,677,229
Issue date
Oct 14, 1997
Kabushiki Kaisha Toshiba
Shigeru Morita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device including bipolar an...
Patent number
5,597,757
Issue date
Jan 28, 1997
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Inverter gate circuit of a bi-CMOS structure having common layers b...
Patent number
5,583,363
Issue date
Dec 10, 1996
Kabushiki Kaisha Toshiba
Hiroshi Momose
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor integrated circuit device and method of manufacturing...
Patent number
5,576,572
Issue date
Nov 19, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a BiMOS device
Patent number
5,523,242
Issue date
Jun 4, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having bipolar transistor and MOS transistor
Patent number
5,512,772
Issue date
Apr 30, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing semiconductor device
Patent number
5,506,168
Issue date
Apr 9, 1996
Kabushiki Kaisha Toshiba
Shigeru Morita
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor integrated circuit device having double well structure
Patent number
5,489,795
Issue date
Feb 6, 1996
Kabushiki Kaisha Toshiba
Hisao Yoshimura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including bipolar transistor having shallowed...
Patent number
5,485,034
Issue date
Jan 16, 1996
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar transistor having an emitter electrode formed of polysilicon
Patent number
5,442,226
Issue date
Aug 15, 1995
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device including bipolar transistor having shallowed...
Patent number
5,406,115
Issue date
Apr 11, 1995
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having bipolar transistor and MOS transistor
Patent number
5,399,894
Issue date
Mar 21, 1995
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar transistor having an electrode structure suitable for integ...
Patent number
5,341,021
Issue date
Aug 23, 1994
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a BiMOS device
Patent number
5,340,751
Issue date
Aug 23, 1994
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing a semiconductor device having wiring elect...
Patent number
5,278,099
Issue date
Jan 11, 1994
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bi-CMOS semiconductor integrated circuit
Patent number
5,243,557
Issue date
Sep 7, 1993
Kabushiki Kaisha Toshiba
Takeo Maeda
G11 - INFORMATION STORAGE
Information
Patent Grant
Semiconductor device with bipolar and CMOS transistors
Patent number
5,093,707
Issue date
Mar 3, 1992
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device
Patent number
5,091,760
Issue date
Feb 25, 1992
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device and method of manufacturing the same
Patent number
5,091,322
Issue date
Feb 25, 1992
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bi-CMOS semiconductor device having memory cells formed in isolated...
Patent number
5,075,752
Issue date
Dec 24, 1991
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device for use in a hybrid LSI circuit
Patent number
5,014,106
Issue date
May 7, 1991
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturing integrated bipolar and MOS transistors
Patent number
4,931,407
Issue date
Jun 5, 1990
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a polycide gate using a titanium nitride capping l...
Patent number
4,900,257
Issue date
Feb 13, 1990
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming selective polysilicon wiring layer to source, dra...
Patent number
4,769,337
Issue date
Sep 6, 1988
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing semiconductor device
Patent number
4,663,825
Issue date
May 12, 1987
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device comprising resistors...
Patent number
4,643,777
Issue date
Feb 17, 1987
Kabushiki Kaisha Toshiba
Takeo Maeda
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
DOCUMENT PROCESSING SYSTEM, DOCUMENT PROCESSING METHOD AND STORAGE...
Publication number
20150113391
Publication date
Apr 23, 2015
SKK Ltd.
Takeo Maeda
G06 - COMPUTING CALCULATING COUNTING