Takeo Shirahama

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor laser
- Patent number 7,796,664
- Issue date Sep 14, 2010
- Mitsubishi Electric Corporation
- Yasuyuki Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-V nitride semiconductor device
- Patent number 7,544,611
- Issue date Jun 9, 2009
- Mitsubishi Electric Corporation
- Takeo Shirahama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having via holes
- Patent number 7,288,486
- Issue date Oct 30, 2007
- Mitsubishi Electric Corporation
- Takeo Shirahama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LASER
- Publication number 20090185595
- Publication date Jul 23, 2009
- Mitsubishi Electric Corporation
- Yasuyuki Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER
- Publication number 20090162962
- Publication date Jun 25, 2009
- Mitsubishi Electric Corporation
- Yosuke SUZUKI
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080318422
- Publication date Dec 25, 2008
- Mitsubishi Electric Corporation
- Takeo Shirahama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device having via holes
- Publication number 20070128852
- Publication date Jun 7, 2007
- Mitsubishi Electric Corporation
- Takeo Shirahama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a compound semiconductor device having an...
- Publication number 20070082427
- Publication date Apr 12, 2007
- Mitsubishi Electric Corporation
- Takeo Shirahama
- H01 - BASIC ELECTRIC ELEMENTS