Takeshi Kajiyama

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic random access memory
- Patent number 9,263,666
- Issue date Feb 16, 2016
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 9,029,943
- Issue date May 12, 2015
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory
- Patent number 9,000,545
- Issue date Apr 7, 2015
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 8,941,197
- Issue date Jan 27, 2015
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory and manufacturing method
- Patent number 8,829,580
- Issue date Sep 9, 2014
- Kabushiki Kaisha Toshiba
- Kuniaki Sugiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 8,592,928
- Issue date Nov 26, 2013
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory device
- Patent number 8,587,042
- Issue date Nov 19, 2013
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 8,542,519
- Issue date Sep 24, 2013
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance change type memory
- Patent number 8,503,216
- Issue date Aug 6, 2013
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple channel fin-FET and its manufacturing method
- Patent number 8,492,830
- Issue date Jul 23, 2013
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory
- Patent number 8,357,982
- Issue date Jan 22, 2013
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,314,464
- Issue date Nov 20, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,309,950
- Issue date Nov 13, 2012
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory
- Patent number 8,238,144
- Issue date Aug 7, 2012
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 8,208,289
- Issue date Jun 26, 2012
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method of the same
- Patent number 8,203,193
- Issue date Jun 19, 2012
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor memory device
- Patent number 8,111,540
- Issue date Feb 7, 2012
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,081,505
- Issue date Dec 20, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetic random access memory, method of...
- Patent number 8,058,080
- Issue date Nov 15, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device comprising gate electrode surrounding entire c...
- Patent number 8,022,439
- Issue date Sep 20, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 8,009,464
- Issue date Aug 30, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and manufacturing method thereof
- Patent number 7,919,826
- Issue date Apr 5, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and write method of the same
- Patent number 7,916,521
- Issue date Mar 29, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 7,848,136
- Issue date Dec 7, 2010
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 7,821,086
- Issue date Oct 26, 2010
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and write method of the same
- Patent number 7,796,422
- Issue date Sep 14, 2010
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 7,745,894
- Issue date Jun 29, 2010
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 7,741,688
- Issue date Jun 22, 2010
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 7,727,778
- Issue date Jun 1, 2010
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and write method thereof
- Patent number 7,629,637
- Issue date Dec 8, 2009
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20150137290
- Publication date May 21, 2015
- KABUSHIKI KAISHA TOSHIBA
- Takeshi KAJIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140001525
- Publication date Jan 2, 2014
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120261779
- Publication date Oct 18, 2012
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD
- Publication number 20120248527
- Publication date Oct 4, 2012
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120217594
- Publication date Aug 30, 2012
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120068286
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE CHANGE TYPE MEMORY
- Publication number 20120008367
- Publication date Jan 12, 2012
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110254112
- Publication date Oct 20, 2011
- Kabushiki Kaisha Toshiba
- Takaya YAMANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME
- Publication number 20110248365
- Publication date Oct 13, 2011
- Takeshi KAJIYAMA
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH FIN
- Publication number 20110233661
- Publication date Sep 29, 2011
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20110233697
- Publication date Sep 29, 2011
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20110215382
- Publication date Sep 8, 2011
- Kabushiki Kaisha Toshiba
- Yoshiaki ASAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110068404
- Publication date Mar 24, 2011
- Kabushiki Kaisha Toshiba
- Kuniaki SUGIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110062421
- Publication date Mar 17, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110062417
- Publication date Mar 17, 2011
- Kabushiki Kaisha Toshiba
- Masayoshi Iwayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20110037108
- Publication date Feb 17, 2011
- Kabushiki Kaisha Toshiba
- Kuniaki SUGIURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20110012179
- Publication date Jan 20, 2011
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING GATE ELECTRODE SURROUNDING ENTIRE C...
- Publication number 20100320504
- Publication date Dec 23, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100232210
- Publication date Sep 16, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20100226167
- Publication date Sep 9, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...
- Publication number 20100197044
- Publication date Aug 5, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100193850
- Publication date Aug 5, 2010
- Kabushiki Kaisha Toshiba
- Yoshiaki ASAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20100103718
- Publication date Apr 29, 2010
- Kabushiki Kaisha Toshiba
- Yoshiaki ASAO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100102407
- Publication date Apr 29, 2010
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100097846
- Publication date Apr 22, 2010
- Kabushiki Kaisha Toshiba
- Kuniaki Sugiura
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100053823
- Publication date Mar 4, 2010
- Masayoshi Iwayama
- G01 - MEASURING TESTING
Information Patent Application
RESISTANCE CHANGE MEMORY
- Publication number 20100002492
- Publication date Jan 7, 2010
- Kabushiki Kaisha Toshiba
- Takeshi KAJIYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20090206426
- Publication date Aug 20, 2009
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND WRITE METHOD OF THE SAME
- Publication number 20090154224
- Publication date Jun 18, 2009
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20080308887
- Publication date Dec 18, 2008
- Yoshiaki Asao
- G11 - INFORMATION STORAGE

Takeshi Kajiyama

Person

Patents Grantslast 30 patents

Magnetic random access memory

Semiconductor memory device and method of manufacturing the same

Magnetic random access memory

Magnetic random access memory

Magnetoresistive memory and manufacturing method

Magnetic random access memory and method of manufacturing the same

Magnetoresistive random access memory device

Semiconductor memory device

Resistance change type memory

Multiple channel fin-FET and its manufacturing method

Magnetic memory

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Magnetic memory

Magnetoresistive effect element

Magnetic random access memory and manufacturing method of the same

Semiconductor memory device

Magnetoresistive element and method of manufacturing the same

Method of manufacturing a magnetic random access memory, method of...

Semiconductor device comprising gate electrode surrounding entire c...

Magnetic random access memory and manufacturing method thereof

Magnetoresistive element and manufacturing method thereof

Magnetic random access memory and write method of the same

Magnetic memory

Semiconductor memory device

Magnetic random access memory and write method of the same

Semiconductor memory device

Magnetic random access memory and method of manufacturing the same

Magnetoresistive element and method of manufacturing the same

Magnetic random access memory and write method thereof

Patents Applicationslast 30 patents

MAGNETIC RANDOM ACCESS MEMORY

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MAGNETIC RANDOM ACCESS MEMORY

SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

RESISTANCE CHANGE TYPE MEMORY

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR MEMORY DEVICE WITH FIN

MAGNETIC MEMORY

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE MEMORY AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

SEMICONDUCTOR DEVICE COMPRISING GATE ELECTRODE SURROUNDING ENTIRE C...

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MAGNETIC MEMORY

METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF...

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

RESISTANCE CHANGE MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETIC RANDOM ACCESS MEMORY AND WRITE METHOD OF THE SAME

SEMICONDUCTOR MEMORY DEVICE