Takeshi Ohfuji

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Post exposure modification of critical dimensions in mask fabrication
- Patent number 7,045,259
- Issue date May 16, 2006
- Intel Corporation
- Takeshi Ohfuji
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Post exposure modification of critical dimensions in mask fabrication
- Patent number 7,045,260
- Issue date May 16, 2006
- Intel Corporation
- Takeshi Ohfuji
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Post exposure modification of critical dimensions in mask fabrication
- Patent number 6,801,295
- Issue date Oct 5, 2004
- Intel Corporation
- Hiroyuki Inomata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Photoresist, compounds for composing the photoresist, and method of...
- Patent number 5,994,025
- Issue date Nov 30, 1999
- NEC Corporation
- Shigeyuki Iwasa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Photoresist and compounds for composing the photoresist
- Patent number 5,985,522
- Issue date Nov 16, 1999
- NEC Corporation
- Shigeyuki Iwasa
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Photoresist and compounds for composing the photoresist
- Patent number 5,770,346
- Issue date Jun 23, 1998
- NEC Corporation
- Shigeyuki Iwasa
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Photoresist and monomer and polymer for composing the photoresist
- Patent number 5,665,518
- Issue date Sep 9, 1997
- NEC Corporation
- Katsumi Maeda
- C07 - ORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
Post exposure modification of critical dimensions in mask fabrication
- Publication number 20040197713
- Publication date Oct 7, 2004
- Takeshi Ohfuji
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Post exposure modification of critical dimensions in mask fabrication
- Publication number 20030059688
- Publication date Mar 27, 2003
- Hiroyuki Inomata
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Post exposure modification of critical dimensions in mask fabrication
- Publication number 20030059719
- Publication date Mar 27, 2003
- Takeshi Ohfuji
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Takeshi Ohfuji

Person

Patents Grantslast 30 patents

Post exposure modification of critical dimensions in mask fabrication

Post exposure modification of critical dimensions in mask fabrication

Post exposure modification of critical dimensions in mask fabrication

Photoresist, compounds for composing the photoresist, and method of...

Photoresist and compounds for composing the photoresist

Photoresist and compounds for composing the photoresist

Photoresist and monomer and polymer for composing the photoresist

Patents Applicationslast 30 patents

Post exposure modification of critical dimensions in mask fabrication

Post exposure modification of critical dimensions in mask fabrication

Post exposure modification of critical dimensions in mask fabrication